Search

We demonstrate an optical waveguide device capable of supporting the optical power necessary for trapping a single atom or a cold-atom ensemble with evanescent fields. Our photonic integrated platform successfully manages optical powers of ~30mW.

We demonstrate an efficient non-magnetic optical isolator based on electrically-driven inter-band acousto-optic scattering in an AlN-on-SOI photonic device. The isolator exhibits < 1 dB insertion loss and 10 dB of isolation over a 50 GHz bandwidth.

In this paper, we test Si vertical-junction disk modulators and waveguide-integrated Ge p-i-n photodiodes (PDs) to see how the key performance metrics are affected by 60Co gamma radiation (total ionizing dose), a common proxy for simulating a mix of high-energy ion particle flux. It is found that reverse bias dark current increases significantly for both devices after 1-Mrad(Si) exposure. As the bandwidth of the Si disk modulator decreases by 6.5% after 1-Mrad(Si) dose, the bandwidth of the Ge p-i-n PD appears to be unaffected. The increased sensitivity of the Si disk modulator bandwidth to gamma radiation is hypothesized to be caused by a decrease in the carrier concentration of the junction with a resulting increase in the p-n junction RC time constant. The Ge p-i-n PD is relatively insensitive to the surface effects, because the absorption happens away from the SiO2–Ge interface and the gamma radiation has a minimal effect on carrier mobility.

We demonstrate an optical waveguide device, capable of supporting the high, in-vacuum, optical power necessary for trapping a single atom or a cold atom ensemble with evanescent fields. Our photonic integrated platforms, with suspended membrane waveguides, successfully manages optical powers of 6 mW (500 um span) to nearly 30 mW (125 um span) over an un-tethered waveguide span. This platform is compatible with laser cooling and magneto-optical traps (MOTs) in the vicinity of the suspended waveguide, called the membrane MOT and the needle MOT, a key ingredient for efficient trap loading. We evaluate two novel designs that explore critical thermal management features that enable this large power handling. This work represents a significant step toward an integrated platform for coupling neutral atom quantum systems to photonic and electronic integrated circuits on silicon., 9 pages, 6 figures

We present narrowband RF-photonic filters in an integrated silicon platform. Using Brillouin interactions, the filters yield narrowband (∼MHZ) filter bandwidths with high signal rejection, and demonstrate tunability over a wide (∼GHz) frequency range.

Passive silicon photonic waveguides are exposed to gamma radiation to understand how the performance of silicon photonic integrated circuits is affected in harsh environments such as space or high energy physics experiments. The propagation loss and group index of the mode guided by these waveguides is characterized by implementing a phase sensitive swept-wavelength interferometric method. We find that the propagation loss associated with each waveguide geometry explored in this study slightly increases at absorbed doses of up to 100 krad (Si). The measured change in group index associated with the same waveguide geometries is negligibly changed after exposure. Additionally, we show that the post-exposure degradation of these waveguides can be improved through heat treatment.

As self-sustained oscillators, lasers possess the unusual ability to spontaneously synchronize. These nonlinear dynamics are the basis for a simple yet powerful stabilization technique known as injection locking, in which a laser's frequency and phase can be controlled by an injected signal. Due to its inherent simplicity and favorable noise characteristics, injection locking has become a workhorse for coherent amplification and high-fidelity signal synthesis in applications ranging from precision atomic spectroscopy to distributed sensing. Within integrated photonics, however, these injection locking dynamics remain relatively untapped--despite significant potential for technological and scientific impact. Here, we demonstrate injection locking in a silicon photonic Brillouin laser for the first time. Injection locking of this monolithic device is remarkably robust, allowing us to tune the laser emission by a significant fraction of the Brillouin gain bandwidth. Harnessing these dynamics, we demonstrate amplification of small signals by more than 23 dB. Moreover, we demonstrate that the injection locking dynamics of this system are inherently nonreciprocal, yielding unidirectional control and back-scatter immunity in an all-silicon system. This device physics opens the door to new strategies for phase noise reduction, low-noise amplification, and back-scatter immunity in silicon photonics., Comment: 15 pages

We demonstrate injection-locked operation of a silicon-based Brillouin laser for the first time. The unique spatio-temporal inter-modal Brillouin dynamics enable nonreciprocal control and low-phase-noise operation within a monolithically integrated system.

We present a 30 GHz heterogeneously integrated silicon photonic/lithium niobate Mach-Zehnder modulator simultaneously utilizing the strong Pockels effect in LiNbO 3

We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry–Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.

We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics light input/output and optical components, such as directional couplers and low-radius bends. No etching or patterning of the thin film LN is required. This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator.

We present a new method of accurately and quickly characterizing waveguide loss using an arrayed waveguide grating (AWG) measured in a swept wavelength interferometer (SWI). By taking the Fourier transform of the interference pattern in the optical frequency domain we are able to accurately extract the waveguide propagation loss which is independent of insertion loss due to on and off chip coupling. This method is applied to a 400 nm × 230 nm silicon waveguide which we find to have a loss of 2.13±0.05 dB/cm. We will also present additional results for waveguide loss as a function of waveguide width.

We demonstrate the ultrahigh extinction operation of a silicon photonic (SiP) amplitude modulator (AM) employing a cascaded Mach-Zehnder interferometer. By carrying out optimization sweeps without significantly degrading the extinction, the SiP AM is robust to environment changes and maintained >52 dB extinction for >6 hrs.

A foundry-compatible hybrid silicon-lithium niobate electro-optic modulator with an optical bandwidth greater than 6 GHz is presented. Wafer-scale photolithography processing is used to fabricate silicon features before bonding to a 600 nm lithium niobate film.

Silicon photonics is a platform that enables densely integrated photonic components and systems and integration with electronic circuits. Depletion mode modulators designed on this platform suffer from a fundamental frequency response limit due to the mobility of carriers in silicon. Lithium niobate-based modulators have demonstrated high performance, but the material is difficult to process and cannot be easily integrated with other photonic components and electronics. In this manuscript, we simultaneously take advantage of the benefits of silicon photonics and the Pockels effect in lithium niobate by heterogeneously integrating silicon photonic-integrated circuits with thin-film lithium niobate samples. We demonstrate the most CMOS-compatible thin-film lithium niobate modulator to date, which has electro-optic 3 dB bandwidths of 30.6 GHz and half-wave voltages of 6.7 V×cm. These modulators are fabricated entirely in CMOS facilities, with the exception of the bonding of a thin-film lithium niobate sample post fabrication, and require no etching of lithium niobate.

We derive an adjoint shape optimization algorithm with a compound figure of merit and demonstrate its use with both gradient descent and Levenberg-Marquart updates for the case of SiO2-buried SOI coplanar waveguide crossings. We show that a smoothing parameter, basis function width, can be used to eliminate small feature sizes with a small cost to device performance. The Levenberg-Marquardt update produces devices with larger bandwidth. A waveguide crossing with simulated performance values of > 60 dB cross power extinction ratio and > −0.08 dB through power over the 1500-1600 nm band is presented. A fabricated device is measured to have a maximum of −0.06 dB through power and a 50 dB cross power extinction ratio.

Sandia National Laboratories has developed a toolkit of RF photonic devices. These devices have been used in the development of multielement RF photonic circuits and in support of MPW runs. In this talk I will discuss Sandia's silicon photonic process and RF photonic device performance.

Measurement uncertainties in the techniques used to characterize loss in photonic waveguides becomes a significant issue as waveguide loss is reduced through improved fabrication technology. Typical loss measurement techniques involve environmentally unknown parameters such as facet reflectivity or varying coupling efficiencies, which directly contribute to the uncertainty of the measurement. We present a loss measurement technique, which takes advantage of the differential loss between multiple paths in an arrayed waveguide structure, in which we are able to gather statistics on propagation loss from several waveguides in a single measurement. This arrayed waveguide structure is characterized using a swept-wavelength interferometer, enabling the analysis of the arrayed waveguide transmission as a function of group delay between waveguides. Loss extraction is only dependent on the differential path length between arrayed waveguides and is therefore extracted independently from on and off-chip coupling efficiencies, which proves to be an accurate and reliable method of loss characterization. This method is applied to characterize the loss of the silicon photonic platform at Sandia Labs with an uncertainty of less than 0.06 dB/cm.