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Implantable medical devices have revolutionized healthcare by providing continuous monitoring and therapeutic interventions within the human body. The overall performance of these devices is heavily dependent on the effectiveness and efficiency of integrated electronic components, such as transistors. This survey explores the growing utilization of Tunnel Field-Effect Transistors (TFETs) in implantable devices, shedding light on their advantages and challenges in this specific application domain. TFETs, characterized by their unique tunnelling mechanism, offer several advantages that make them well suited for implantable devices. Their low-power consumption, reduced leakage current, and improved subthreshold swing make them ideal for energy-efficient, long-lasting operation within the constrained power budgets of implantable devices. Furthermore, TFETs exhibit excellent performance at low supply voltages, ensuring minimal tissue damage and heat generation. This survey also addresses the challenges associated with TFETs in implantable devices, including fabrication complexities, variability, and compatibility with existing technologies. It highlights recent advancements in TFET technology that address these concerns, such as improved material choices and manufacturing techniques. As technology continues to advance, TFETs are poised to play a pivotal role in improving the overall efficiency and reliability of life-saving technologies and medical devices. Overall, this survey provides valuable insights into the current state and future prospects of TFETs in implantable devices, guiding researchers and engineers in harnessing their potential for the benefit of healthcare and patient well-being. [ABSTRACT FROM AUTHOR]