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We visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols to minimize effects of the higher pressure background gas. [ABSTRACT FROM AUTHOR]

Abstract: In this study, an easily implemented surface modification scheme is reported employing Ta2O5 membrane which covers IrO2 electrode in response to H+ and eliminating redox species interference. Evidence shows that H+ can pass through Ta2O5 films and react with IrO2/Pt electrodes due to proton–electron double injection. A Ta2O5 membrane, an ionic conductor with an insulating property, blocks the transport of electrons generated from oxygen perturbation in the solution. The conduction of both electrons and protons preserve the current continuity across the interface. Owing to proton–electron double injection, IrO2 will be reduced to Ir(OH)3 during pH detection. The [IrO2]/[Ir(OH)3] will remain constant and therefore the Nernstian electrode potential performs stably as a function of pH (−59.447 to −59.504mV/pH, 2

Abstract: Transition-metal silicides have been used in the salicide process to form gate and source/drain contacts in MOSFET devices. How to control silicide formation in shallow junction devices and the kinetics of single silicide phase formation between the Si and metal thin films have received extensive attention and study. As the trend of miniaturization of Si devices moves from 45nm to smaller sizes, the formation of nanoscale metal silicides has attracted renewed interest in silicide formation. Nanostructures in Si nanowires have been studied for basic components in electronic and optoelectronics devices, especially for biosensors. Well-defined nanoscale building blocks such as ohmic contacts and gates on Si nanowires must be developed in order to be assembled into functional circuit components in future nanotechnology. It requires a systematic study of solid-state chemical reactions in the nanoscale to form these circuit components. In this review, we compare silicide formation in thin films and in nanowires and focus on the nucleation and growth of epitaxial silicides. The difference of silicide formation between the thin film case and the nanowire case, especially the kinetics of nucleation and growth, will be emphasized. [ABSTRACT FROM AUTHOR]

Nitride materials for memristors are benefited from their high response speed and high power density. The memristive effects on 1D nitride structures has not yet been elucidated. Hence, the activation of the memristive capability of nanowire (NW)‐based nitride memristors using an uncomplicated fabrication as single‐step anisotropic wet etching is proposed. Among nitrides, gallium nitride, a third‐generation semiconductor, exhibits properties potentially suitable for neuromorphic applications. The wet etchant considerably alters the chemisorbed molecules and dangling bonds associated with the surface states of the nanowires. A device based on such NWs which exhibits low power consumption with no required compliance current and forming voltage for operation is demonstrated. It can integrate all memristive capabilities, including multiple state switching, nonvolatile bipolar memory, and Ca2+ dynamics‐imitating synaptic actions. The examination of the memristive process also highlights the significance of altering surfaces in the devices, in addition to the shared principles that underlie biological and artificial synapses. The operating mode of the nitride‐nanowire devices can be controlled by controlling the formation/dissolution of the oxygen‐conductive path along the nanowires. Thus, the study realizes nanowire memristors based on a nitride material framework, that is promising for application in the 1D–1D system downsizing required for the bio‐inspired artificial synapse. [ABSTRACT FROM AUTHOR]

[Display omitted] • Single-phase binary FCC alloy with superb strength is designed through volume-misfit-maximization-strategy. • The targeted Ni 80 Mo 20 exhibits a yield strength of ∼1.05 GPa while maintaining ∼40% elongation. • Unprecedented volume misfit brings a highest-ever Hall-Petch coefficient (1034 MPa·μm1/2) and a pronounced solid solution strengthening (224 MPa). • Volume misfit is a good pertinent indicator of k HP. • Screw dislocations can control the strengthening in SP-FCC alloys. Single-phase face-centered cubic (SP-FCC) alloys normally possess low strength. Conventionally strengthening strategies inevitably cause significant ductility sacrifice. Here, a single-phase Ni-based FCC alloy with a superb yield strength of ∼1.05GPa and a good ductility of 37% is designed through maximizing the volume misfits. The misfit of the purposely targeted Ni 80 Mo 20 alloy is severer than all existing FCC alloys, bringing the alloy a highest-ever Hall-Petch coefficient (k HP = 1034 MPa·μm1/2) and a pronounced solid solution strengthening (Δ σ ss = 224 MPa). Current work yields two surprising and novel findings for SP-FCC alloys. First, volume misfit is a good pertinent indicator of k HP. Second, the conventional impression about the sole contribution of edge dislocations to strengthening in SP-FCC alloys may no longer hold; instead, screw dislocations can also kick in once the nonsphericity of the solute-induced stress field reaches a critical value. Altogether, this work paves a new avenue of pursuing ultimate strengthening without significant ductility sacrifice for SP-FCC alloys relying on the volume-misfit-maximization strategy. [ABSTRACT FROM AUTHOR]

Defect engineering represents a significant approach for atomically thick 2D semiconductor material development to explore the unique material properties and functions. Doping‐induced conversion of conductive polarity is particularly beneficial for optimizing the integration of layered electronics. Here, controllable doping behavior in palladium diselenide (PdSe2) transistor is demonstrated by manipulating its adatom‐vacancy groups. The underlying mechanisms, which originate from reversible adsorption/desorption of oxygen clusters near selenide vacancy defects, are investigated systematically via their dynamic charge transfer characteristics and scanning tunneling microscope analysis. The modulated doping effect allows the PdSe2 transistor to emulate the essential characteristics of photo nociceptor on a device level, including firing signal threshold and sensitization. Interestingly, electrostatic gating, acting as a neuromodulator, can regulate the adaptive modes in nociceptor to improve its adaptability and perceptibility to handle different danger levels. An integrated artificial nociceptor array is also designed to execute unique image processing functions, which suggests a new perspective for extension of the promise of defect engineered 2D electronics in simplified sensory systems toward use in advanced humanoid robots and artificial visual sensors. [ABSTRACT FROM AUTHOR]

We investigated the vapor–solid–solid growth of Si nanowires from Ni silicides on Si(111), Si(110), and GaN substrates. The morphology and structures of Si on these substrates are distinct, and are dependent on substrate lattices and an epitaxy process during growth. The sidewall facets and epitaxy of silicides and Si were discussed. In addition, Si grown on GaN nanowires was investigated which led to the formation of branched nanowire structures. The Si nanowires/nanodots lie on the surface of GaN nanowires to maintain lower system energy. We manipulated the whole process in a UHV and studied the crystal growth of Si on different lattice substrates. Meanwhile, the process which occurred in a non-UHV led to less regularity on the NiSi2 crystal facets and interface epitaxy between NiSi2 and Si nanowires. [ABSTRACT FROM AUTHOR]

The bending and residual stress of flip chips caused by the mismatch of thermal expansion between the chip and the substrate have been measured by polychromatic microfocused synchrotron x-ray beam. Precise orientation information as a function of position on the chip was obtained from Laue diffraction patterns, so that the bending angle with respect to a reference position at the center of the chip can be calculated at each position. This in turn allows deducing the local curvature of the entire flip chip. Local stress distribution was then mapped by applying a modified Stoney’s stress-strain equation to the measured curvature. Our study shows that thermal stress on the circuits and the solder joints in a flip chip strongly depend on temperature and the distance from the center of the chip, indicating that interconnects at the corner and edge of a flip chip are of reliability concerns. [ABSTRACT FROM AUTHOR]

We report here the correlation of electrical properties on Schottky barrier contacts and atomic scale imperfections based on the degree of lattice distortion and moiré fringes at the interfaces of CoSi2 and Si. The I-V measurements showed that the higher levels of perfection of the interfaces gave better Schottky barrier characteristics and we discuss the implications of the transport property at Schottky barrier contacts. [ABSTRACT FROM AUTHOR]

The tantalizing prospect of harnessing the unique properties of graphene crumpled nanostructures continues to fuel tremendous interest in energy storage and harvesting applications. However, the paper ball-like, hard texture, and closed-sphere morphology of current 3D graphitic nanostructure production not only constricts the conductive pathways but also limits the accessible surface area. Here, we report new insights into electrohydrodynamically-generated droplets as colloidal nanoreactors in that the stimuli-responsive nature of reduced graphene oxide can lead to the formation of crumpled nanostructures with a combination of open structures and doubly curved, saddle-shaped edges. In particular, the crumpled nanostructures dynamically adapt to non-spherical, polyhedral shapes under continuous deposition, ultimately assembling into foam-like microstructures with a highly accessible surface area and spatially interconnected transport pathways. The implementation of such crumpled nanostructures as three-dimensional rear contacts for solar conversion applications realize benefits of a high aspect ratio, electrically addressable and energetically favorable interfaces, and substantial enhancement of both short-circuit currents and fill-factors compared to those made of planar graphene counterparts. Further, the 3D crumpled nanostructures may shed lights onto the development of effective electrocatalytic electrodes due to their open structure that simultaneously allows for efficient water flow and hydrogen escape. [ABSTRACT FROM AUTHOR]