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12. RF receiver chip set employing 0.13 μm CMOS technology for application to K-band commercial automotive radar system

Author

Choi Se-Hwan, Kyu Ho Park, Kwang-Ho Ahn, Young Yun, Se-Ho Kim, Kim Jin-Sup, Kim Ki-Jin, and Young-Bae Park

Subjects
Engineering, CMOS, business.industry, K band, Amplifier, Electrical engineering, dBc, Radio frequency, business, Noise figure, Low-noise amplifier, Leakage (electronics)
Abstract

A 24 GHz low-noise amplifier (LNA) and mixer for automotive radar applications was designed using a standard 0.13-mum CMOS technology. For mixer, single balanced resistive mixer was employed to suppress LO leakage signal on RF port. At 24 GHz, the mixer showed a conversion loss of -5.5 dB, an LO leakage suppression of -56.2 dBc on RF port, and 3rd input intercept point of 12 dBm. To achieve sufficient gain, this LNA is composed of three cascaded common-source stages. Source degeneration inductor was used to achieve low noise, and gate resistive matching was used to increase stability. The LNA showed a gain of 15.3 dB and a noise figure of 4.49 dB at 24 GHz, and it showed unconditional stability.

Published
2008

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