Search

Your search keyword '"Choi, Nagyong"' showing total 13 results
Start Over Author "Choi, Nagyong"
13 results on '"Choi, Nagyong"'

6. Neuromorphic Technology Based on Charge Storage Memory Devices

Author

Lee, Sung-Tae, primary, Lim, Suhwan, additional, Choi, Nagyong, additional, Bae, Jong-Ho, additional, Kim, Chul-Heung, additional, Lee, Soochang, additional, Lee, Dong Hwan, additional, Lee, Tackhwi, additional, Chung, Sungyong, additional, Park, Byung-Gook, additional, and Lee, Jong-Ho, additional

Published
2018
Full Text
View/download PDF

13. Diode-Type NAND Flash Memory Cell String Having Super-Steep Switching Slope Based on Positive Feedback.

Author

Joe, Sung-Min, Kang, Ho-Jung, Choi, Nagyong, Kang, Myounggon, Park, Byung-Gook, and Lee, Jong-Ho

Subjects
DIODES, NAND gates, FLASH memory, SEMICONDUCTOR diodes, THYRISTORS
Abstract

A positive feedback (PF) mechanism was adopted for the first time in the cell string of a 3-D NAND flash memory where n+ and p+ regions are formed on both ends of the string to implement a diode-type cell string. The body consists of a tube-type poly-Si channel. To generate the PF in the channel during a read operation, a new read operation scheme is proposed. In this paper, the simulator was calibrated in terms of trap density ( D\mathrm {it}) of a poly-Si channel extracted from fabricated 3-D NAND flash memory cells. By utilizing the PF, a NAND flash memory cell in a cell string has a steep subthreshold swing of <1 mV/decade. [ABSTRACT FROM AUTHOR]

Published
2016
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results