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To improve electrical characteristics of high-kgate dielectrics, post-deposition annealing (PDA) was performed in high-pressure (10atm)pure hydrogen ambient. High-pressure PDA samples show excellent electrical characteristics such as low fixed charge density, and reduced interface state density confirmed by capacitance-voltage analysis and conductance technique, respectively. They also showed no frequency dependency and a hysteresis of 2.9mV. The leakage current decreases remarkably from 0.23 to 2.44×10−7Ampere∕cm2at the gate voltage of 1Vbelow VFB. The excellent electrical characteristics of high-pressure hydrogen annealed sample can be explained by enhanced hydrogen passivation of defects in high-kdielectric.