197 results on '"Cho, M. W."'
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2. Ultra-precision lapping of machinable ceramic Si3N4-BN by in-process electrolytic dressing
3. Control of crystal polarity in oxide and nitride semiconductors by interface engineering
4. ZnO/GaN Heteroepitaxy
5. Inspection Planning Strategy for the On-Machine Measurement Process Based on CAD/CAM/CAI Integration
6. Effect of h-BN on the Microstructure, Mechanical Properties, and Machinability of Si3 N4 -Based Ceramic Composites
7. Growth of ZnO and GaN Films
8. A new structure of 780 nm AlGaAs/GaAs high power laser diode with non-absorbing mirrors
9. ZnSe heteroepitaxy on GaAs (110) substrate
10. Surface treatment of znse substrate and homoepitaxy of znse
11. Structural variation of cubic and hexagonal MgxZn1-xO layers grown on MgO(111)/c-sapphire.
12. Deep-level-transient spectroscopy of heavily Al-doped ZnSe layers grown by molecular-beam epitaxy.
13. Machining error compensation using radial basis function network based on CAD/CAM/CAI integration concept.
14. Band alignment of ZnSe/Zn[sub 0.75]Mg[sub 15]Be[sub 10]Se heterostructures.
15. Growth and characterization of beryllium-based II-VI compounds.
16. Flexible inspection system based on a vision guided coordinate measuring machine.
17. A study on the analysis method of shape quality and the micro burr removal on a micro pyramid pattern using the micro MR fluid jet polishing system
18. Aspherical Lens Design and Injection Mold Analysis Using Extracted Shape Information
19. Path Control of MR Fluid Jet Polishing System for the Polishing of an Aspherical Lens Mold Core
20. Polishing characteristics of optical glass using PMMA-coated carbonyl-iron-based magnetorheological fluid
21. A Study of Design Optimization Using Response Surface Analysis and Fabricaiton MEMS Probe Tip
22. Factors associated with failure of enhanced recovery protocol in patients undergoing major hepatobiliary and pancreatic surgery: a retrospective cohort study
23. D3 HIV Envelope gp120 Activates LFA-1 on CD4 T-Lymphocytes and Increases Cell Susceptibility to LFA-1-Targeting Leukotoxin (LtxA)
24. Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer
25. Emergent topologies in activity-dependent self-organizing networks
26. An empirical equation including the strain effect for optical transition energy of strained and fully relaxed GaN films
27. Fabrication of free‐standing GaN substrate using evaporable buffer layer (EBL)
28. Lattice strain in bulk GaN epilayers grown on CrN/sapphire template
29. Preview control of vehicle suspension system featuring MR shock absorber
30. An experimental study on the ultra-precision polishing of quartz crystal using MR fluids and micro abrasives
31. Fabrication of one-dimensional and two-dimensional periodically polarity inverted ZnO structures using the patterned CrN buffer layers
32. Chemical lift‐off of GaN epitaxial films grown on c‐sapphire substrates with CrN buffer layers
33. The Fabrication of Vertical Light-Emitting Diodes Using Chemical Lift-Off Process
34. Effects of interfacial layer structures on crystal structural properties of ZnO films
35. Lattice relaxation mechanism of ZnO thin films grown on c-Al2O3 substrates by plasma-assisted molecular-beam epitaxy
36. Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy
37. Self-separated freestanding GaN using a NH4Cl interlayer
38. Impact of V/III ratio on electrical properties of GaN thick films grown by hydride vapor-phase epitaxy
39. Free standing GaN layers with GaN nanorod buffer layer
40. Characterization of free‐standing GaN substrates prepared by self lift‐off
41. Polarity control of ZnO films on (0001) Al2O3 by Cr-compound intermediate layers
42. Hydrogen-assisted molecular-beam epitaxy of ZnO layers on Zn-polar ZnO
43. Structural characterization of MgO/c‐Al2O3 interfaces
44. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique
45. Analysis of the relation between leakage current and dislocations in GaN‐based light‐emitting devices
46. Growth of thick GaN layers on c‐plane sapphire substrates using stress absorbing layer (SAL)
47. Origin of forward leakage current in GaN-based light-emitting devices
48. Observation of a filled electronic state in the conduction band of InN
49. Ultra-precision lapping of machinable ceramic Si3N4-BN by in-process electrolytic dressing
50. Structural variation of cubic and hexagonal MgxZn1−xO layers grown on MgO(111)∕c-sapphire
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