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168 results on '"Chiu, Ya-Ping"'

1. Research on the Mechanism of Employee Customer Orientation on Return Behavior Based on E-commerce Platforms: The Mediation Role of Logistics Service Quality

Author

Li, Yang, Chiu, Ya-Ping, Appolloni, Andrea, Series Editor, Caracciolo, Francesco, Series Editor, Ding, Zhuoqi, Series Editor, Gogas, Periklis, Series Editor, Huang, Gordon, Series Editor, Nartea, Gilbert, Series Editor, Ngo, Thanh, Series Editor, Striełkowski, Wadim, Series Editor, Zailani, Suhaiza Hanim Binti Dato Mohamad, editor, Yagapparaj, Kosga, editor, and Zakuan, Norhayati, editor

Published
2024
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5. Low-defect-density WS2 by hydroxide vapor phase deposition

Author

Wan, Yi, Li, En, Yu, Zhihao, Huang, Jing-Kai, Li, Ming-Yang, Chou, Ang-Sheng, Lee, Yi-Te, Lee, Chien-Ju, Hsu, Hung-Chang, Zhan, Qin, Aljarb, Areej, Fu, Jui-Han, Chiu, Shao-Pin, Wang, Xinran, Lin, Juhn-Jong, Chiu, Ya-Ping, Chang, Wen-Hao, Wang, Han, Shi, Yumeng, Lin, Nian, Cheng, Yingchun, Tung, Vincent, and Li, Lain-Jong

Published
2022
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7. Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS2 junctions

Author

Shih, Fu-Yu, Wu, Yueh-Chun, Shih, Yi-Siang, Shih, Ming-Chiuan, Ho, Po-Hsun, Chen, Chun-Wei, Chen, Yang-Fang, Chiu, Ya-Ping, and Wang, Wei-Hua

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Two-dimensional (2D) materials are composed of atomically thin crystals with an enormous surface-to-volume ratio, and their physical properties can be easily subjected to the change of the chemical environment. Encapsulation with other layered materials, such as hexagonal boron nitride, is a common practice; however, this approach often requires inextricable fabrication processes. Alternatively, it is intriguing to explore methods to control transport properties in the circumstance of no encapsulated layer. This is very challenging because of the ubiquitous presence of adsorbents, which can lead to charged-impurity scattering sites, charge traps, and recombination centers. Here, we show that the short-circuit photocurrent originated from the built-in electric field at the MoS2 junction is surprisingly insensitive to the gaseous environment over the range from a vacuum of 1X10^(-6) Torr to ambient condition. The environmental insensitivity of the short-circuit photocurrent is attributed to the characteristic of the diffusion current that is associated with the gradient of carrier density. Conversely, the photocurrent with bias exhibits typical persistent photoconductivity and greatly depends on the gaseous environment. The observation of environment-insensitive short-circuit photocurrent demonstrates an alternative method to design device structure for 2D-material-based optoelectronic applications.

Published
2017

8. Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy

Author

Wang, Yong-Jyun, primary, Yang, Zi-Liang, additional, Chen, Jia-Wei, additional, Zhu, Ruixue, additional, Hsieh, Shang-Hsien, additional, Chang, Sen-Hao, additional, Lin, Hong-Yuan, additional, Lin, Chun-Liang, additional, Chen, Yi-Chun, additional, Chen, Chia-Hao, additional, Huang, Bo-Chao, additional, Chiu, Ya-Ping, additional, Yeh, Chao-Hui, additional, Gao, Peng, additional, Chiu, Po-Wen, additional, Chen, Yi-Cheng, additional, and Chu, Ying-Hao, additional

Published
2024
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14. Local Conduction at the BiFeO3-CoFe2O4 Tubular Oxide Interface

Author

Hsieh, Ying-Hui, Liou, Jia-Ming, Huang, Bo-Chao, Liang, Chen-Wei, He, Qing, Zhan, Qian, Chiu, Ya-Ping, Chen, Yi-Chun, and Chu, Ying-Hao

Subjects
Condensed Matter - Materials Science
Abstract

In strongly correlated oxides, heterointerfaces, manipulating the interaction, frustration, and discontinuity of lattice, charge, orbital, and spin degrees of freedom, generate new possibilities for next generation devices. In this study, we went back to examine the existing oxide heterostructures and found the local conduction at the BiFeO3-CoFe2O4 vertical interface. In such hetero-nanostructure, the tubular interface, surrounding BiFeO3-CoFe2O4 vertical interface, can not only be the medium to the coupling between phases, but also be a new state of the matter. Our study demonstrates a novel concept on oxide interface design and opens a pathway alternative for the explorations of diverse functionalities in complex oxide interfaces., Comment: This paper has been withdrawn

Published
2012

20. Crystalline Complex Oxide Membrane: Sub-1 nm CET Dielectrics for 2D Transistors

Author

Huang, Jing-Kai, primary, Wan, Yi, additional, Shi, Junjie, additional, Zhang, Ji, additional, Wang, Zeheng, additional, Yang, Zi-Liang, additional, Huang, Bo-Chao, additional, Chiu, Ya-Ping, additional, Wang, Wenxuan, additional, Yang, Ni, additional, Liu, Yang, additional, Lin, Chun-Ho, additional, Guan, Xinwei, additional, Hu, Long, additional, Yang, Jack, additional, Wang, Danyang, additional, Tung, Vincent, additional, Kalantar-Zadeh, Kourosh, additional, Wu, Tom, additional, Zu, Xiaotao, additional, Qiao, Liang, additional, Li, Sean, additional, and Li, Lain-Jong, additional

Published
2022
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21. Interplay of field-induced molecular dipole alignment and compensating surface polarization in low-temperature P − V hysteresis of MAPbBr 3 ( 001 )

Author

Freter, Lars, Hsu, Hung-Chang, Sankar, Raman, Chen, Chun-Wei, Dunin-Borkowski, Rafal E., Ebert, Philipp, Chiu, Ya-Ping, and Schnedler, Michael

Subjects
ddc:530
Abstract

Physical review materials 7(5), L052401 (2023). doi:10.1103/PhysRevMaterials.7.L052401, We demonstrate the presence of a hysteresis in tunneling spectra acquired at 4.3 K on cleaved MA-Br terminated (001) surfaces of MAPbBr3 single crystals. Simulations of the tunneling spectra reveal an underlying polarization-voltage (P-V) hysteresis, which is caused by an interplay of subsurface field-induced rotation and alignment of the MA molecules, stabilized by dipole-dipole interactions, and an ion-lattice relaxation. The resulting subsurface polarization is counteracted by a compensating surface polarization, detectable by surface-sensitive tunneling spectroscopy., Published by APS, College Park, MD

Published
2023

22. Modulation and Direct Mapping of the Interfacial Band Alignment of an Eco-Friendly Zinc-Tin-Oxide Buffer Layer in SnS Solar Cells

Author

Ho, Thi-Thong, primary, Yang, Zi-Liang, additional, Fu, Fang-Yu, additional, Jokar, Efat, additional, Hsu, Hung-Chang, additional, Liu, Pei-Chi, additional, Quadir, Shaham, additional, Chen, Cheng-Ying, additional, Chiu, Ya-Ping, additional, Wu, Chih-I, additional, Chen, Kuei-Hsien, additional, and Chen, Li-Chyong, additional

Published
2022
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24. Current status of Women in Physics in Taiwan.

Author

Chiu, Ya-Ping, Lu, Ting-Hua, Ho, Mon-Shu, Lai, Shih-Ping, Chang, Ming-Chuan, Chou, Yi-Chia, Chen, Mei-Hsin, Lin, Li-Hwai, Jiang, Pei-Hsun, Kuo, Chien-Cheng, and Lo, Mon-Feng

Subjects
*WOMEN in physics, *WOMEN physicists, *WOMEN employees, *SCIENCE projects, *UNIVERSITY faculty
Abstract

In 1999, the Working Group for Women in Physics in Taiwan was registered within the Physical Society of Republic of China (renamed the Physical Society of Taiwan in 2017) and became a formal committee in 2003. Since then, the committee has year by year worked on promoting women physicists and monitoring statistics on progress for improving the status of women in physics in Taiwan. This report addresses the current status of women in physics in Taiwan in recent years. The content covers the percentage of women who graduated from physics and astronomy departments in bachelor's, master's, and PhD programs, as well as the approved science projects granted by the Ministry of Science and Technology for female faculty members in those departments. Finally, the report discusses future steps for improving the status of women in physics in Taiwan. [ABSTRACT FROM AUTHOR]

Published
2023
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28. Internal Built-In Electric Fields at Organic–Inorganic Interfaces of Two-Dimensional Ruddlesden–Popper Perovskite Single Crystals

Author

Lin, Cheng-Chieh, primary, Yang, Kai-Di, additional, Shih, Min-Chuan, additional, Huang, Shao-Ku, additional, Chen, Tzu-Pei, additional, Hsu, Hung-Chang, additional, Chuang, Ching-An, additional, Huang, Chih-Ying, additional, Wang, Lucas, additional, Chen, Chia-Chun, additional, Ho, Ching-Hwa, additional, Chiu, Ya-Ping, additional, and Chen, Chun-Wei, additional

Published
2022
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32. Low-defect-density WS2 by hydroxide vapor phase deposition.

Author

Wan, Yi, Li, En, Yu, Zhihao, Huang, Jing-Kai, Li, Ming-Yang, Chou, Ang-Sheng, Lee, Yi-Te, Lee, Chien-Ju, Hsu, Hung-Chang, Zhan, Qin, Aljarb, Areej, Fu, Jui-Han, Chiu, Shao-Pin, Wang, Xinran, Lin, Juhn-Jong, Chiu, Ya-Ping, Chang, Wen-Hao, Wang, Han, Shi, Yumeng, and Lin, Nian

Subjects
VAPOR-plating, CHEMICAL vapor deposition, MOORE'S law, HYDROXIDES, ELECTRON mobility, SEMICONDUCTOR defects
Abstract

Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore's Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm2/Vs (~800 cm2/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials. Chemical vapor deposition enables the scalable production of 2D semiconductors, but the grown materials are usually affected by high defect densities. Here, the authors report a hydroxide vapour phase deposition method to synthesize wafer-scale monolayer WS2 with reduced defect density and electrical properties comparable to those of exfoliated flakes. [ABSTRACT FROM AUTHOR]

Published
2022
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33. Modulation and Direct Mapping of the Interfacial Band Alignment of an Eco-Friendly Zinc-Tin-Oxide Buffer Layer in Sns Solar Cells

Author

Ho, Thi-Thong, primary, Yang, Zi-Liang, additional, Fu, Fang-Yu, additional, Jokar, Efat, additional, Hsu, Hung-Chang, additional, Liu, Pei-Chi, additional, Quadir, Shaham, additional, Chen, Cheng-Ying, additional, Chiu, Ya-Ping, additional, Wu, Chih-I, additional, Chen, Kuei-Hsien, additional, and Chen, Li-Chyong, additional

Published
2021
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34. Defect Engineering in Ambipolar Layered Materials for Mode‐Regulable Nociceptor

Author

Li, Mengjiao, primary, Yang, Feng‐Shou, additional, Hsu, Hung‐Chang, additional, Chen, Wan‐Hsin, additional, Kuo, Chia Nung, additional, Chen, Jiann‐Yeu, additional, Yang, Shao‐Heng, additional, Yang, Ting‐Hsun, additional, Lin, Che‐Yi, additional, Chou, Yi, additional, Lee, Mu‐Pai, additional, Chang, Yuan‐Ming, additional, Yang, Yung‐Cheng, additional, Lee, Ko‐Chun, additional, Chou, Yi‐Chia, additional, Lien, Chen‐Hsin, additional, Lin, Chun‐Liang, additional, Chiu, Ya‐Ping, additional, Lue, Chin Shan, additional, Lin, Shu‐Ping, additional, and Lin, Yen‐Fu, additional

Published
2020
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36. Influences on expatriate social networks in China

Author

Chiu, Ya-Ping, Wu, Melien, Zhuang, Wen-Long, and Hsu, Ying-Yu

Subjects
Alien labor -- Influence, Alien labor -- Research, Social networks -- Research, Business, Business, international, Human resources and labor relations
Published
2009

37. High-κperovskite membranes as insulators for two-dimensional transistors

Author

Huang, Jing-Kai, Wan, Yi, Shi, Junjie, Zhang, Ji, Wang, Zeheng, Wang, Wenxuan, Yang, Ni, Liu, Yang, Lin, Chun-Ho, Guan, Xinwei, Hu, Long, Yang, Zi-Liang, Huang, Bo-Chao, Chiu, Ya-Ping, Yang, Jack, Tung, Vincent, Wang, Danyang, Kalantar-Zadeh, Kourosh, Wu, Tom, Zu, Xiaotao, Qiao, Liang, Li, Lain-Jong, and Li, Sean

Abstract

The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed Moore’s law for decades, but the physical thinning of silicon at sub-ten-nanometre technology nodes introduces issues such as leakage currents1. Two-dimensional (2D) layered semiconductors, with an atomic thickness that allows superior gate-field penetration, are of interest as channel materials for future transistors2,3. However, the integration of high-dielectric-constant (κ) materials with 2D materials, while scaling their capacitance equivalent thickness (CET), has proved challenging. Here we explore transferrable ultrahigh-κsingle-crystalline perovskite strontium-titanium-oxide membranes as a gate dielectric for 2D field-effect transistors. Our perovskite membranes exhibit a desirable sub-one-nanometre CET with a low leakage current (less than 10−2amperes per square centimetre at 2.5 megavolts per centimetre). We find that the van der Waals gap between strontium-titanium-oxide dielectrics and 2D semiconductors mitigates the unfavourable fringing-induced barrier-lowering effect resulting from the use of ultrahigh-κdielectrics4. Typical short-channel transistors made of scalable molybdenum-disulfide films by chemical vapour deposition and strontium-titanium-oxide dielectrics exhibit steep subthreshold swings down to about 70 millivolts per decade and on/off current ratios up to 107, which matches the low-power specifications suggested by the latest International Roadmap for Devices and Systems5.

Published
2022
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38. Photodriven Dipole Reordering: Key to Carrier Separation in Metalorganic Halide Perovskites

Author

Hsu, Hung-Chang, primary, Huang, Bo-Chao, additional, Chin, Shu-Cheng, additional, Hsing, Cheng-Rong, additional, Nguyen, Duc-Long, additional, Schnedler, Michael, additional, Sankar, Raman, additional, Dunin-Borkowski, Rafal E., additional, Wei, Ching-Ming, additional, Chen, Chun-Wei, additional, Ebert, Philipp, additional, and Chiu, Ya-Ping, additional

Published
2019
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39. Defect Engineering in Ambipolar Layered Materials for Mode‐Regulable Nociceptor.

Author

Li, Mengjiao, Yang, Feng‐Shou, Hsu, Hung‐Chang, Chen, Wan‐Hsin, Kuo, Chia Nung, Chen, Jiann‐Yeu, Yang, Shao‐Heng, Yang, Ting‐Hsun, Lin, Che‐Yi, Chou, Yi, Lee, Mu‐Pai, Chang, Yuan‐Ming, Yang, Yung‐Cheng, Lee, Ko‐Chun, Chou, Yi‐Chia, Lien, Chen‐Hsin, Lin, Chun‐Liang, Chiu, Ya‐Ping, Lue, Chin Shan, and Lin, Shu‐Ping

Subjects
SCANNING tunneling microscopy, ELECTRONICS engineers, SEMICONDUCTOR materials, ENGINEERING, HUMANOID robots
Abstract

Defect engineering represents a significant approach for atomically thick 2D semiconductor material development to explore the unique material properties and functions. Doping‐induced conversion of conductive polarity is particularly beneficial for optimizing the integration of layered electronics. Here, controllable doping behavior in palladium diselenide (PdSe2) transistor is demonstrated by manipulating its adatom‐vacancy groups. The underlying mechanisms, which originate from reversible adsorption/desorption of oxygen clusters near selenide vacancy defects, are investigated systematically via their dynamic charge transfer characteristics and scanning tunneling microscope analysis. The modulated doping effect allows the PdSe2 transistor to emulate the essential characteristics of photo nociceptor on a device level, including firing signal threshold and sensitization. Interestingly, electrostatic gating, acting as a neuromodulator, can regulate the adaptive modes in nociceptor to improve its adaptability and perceptibility to handle different danger levels. An integrated artificial nociceptor array is also designed to execute unique image processing functions, which suggests a new perspective for extension of the promise of defect engineered 2D electronics in simplified sensory systems toward use in advanced humanoid robots and artificial visual sensors. [ABSTRACT FROM AUTHOR]

Published
2021
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41. Giant Photoresponse in Quantized SrRuO3 Monolayer at Oxide Interfaces

Author

Liu, Heng-Jui, primary, Wang, Jing-Ching, additional, Cho, Deok-Yong, additional, Ho, Kang-Ting, additional, Lin, Jheng-Cyuan, additional, Huang, Bo-Chao, additional, Fang, Yue-Wen, additional, Zhu, Yuan-Min, additional, Zhan, Qian, additional, Xie, Lin, additional, Pan, Xiao-Qing, additional, Chiu, Ya-Ping, additional, Duan, Chun-Gang, additional, He, Jr-Hau, additional, and Chu, Ying-Hao, additional

Published
2018
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42. Self-Assembly Atomic Stacking Transport Layer of 2D Layered Titania for Perovskite Solar Cells with Extended UV Stability

Author

Chen, Tzu-Pei, primary, Lin, Chung-Wei, additional, Li, Shao-Sian, additional, Tsai, Yung-Han, additional, Wen, Cheng-Yen, additional, Lin, Wendy Jessica, additional, Hsiao, Fei-Man, additional, Chiu, Ya-Ping, additional, Tsukagoshi, Kazuhito, additional, Osada, Minoru, additional, Sasaki, Takayoshi, additional, and Chen, Chun-Wei, additional

Published
2017
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46. A Metal-Insulator Transition of the Buried MnO2Monolayer in Complex Oxide Heterostructure

Author

Liu, Heng-Jui, primary, Lin, Jheng-Cyuan, additional, Fang, Yue-Wen, additional, Wang, Jing-Ching, additional, Huang, Bo-Chao, additional, Gao, Xiang, additional, Huang, Rong, additional, Dean, Philip R., additional, Hatton, Peter D., additional, Chin, Yi-Ying, additional, Lin, Hong-Ji, additional, Chen, Chien-Te, additional, Ikuhara, Yuichi, additional, Chiu, Ya-Ping, additional, Chang, Chia-Seng, additional, Duan, Chun-Gang, additional, He, Qing, additional, and Chu, Ying-Hao, additional

Published
2016
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48. Self‐Assembly Atomic Stacking Transport Layer of 2D Layered Titania for Perovskite Solar Cells with Extended UV Stability.

Author

Chen, Tzu‐Pei, Lin, Chung‐Wei, Li, Shao‐Sian, Tsai, Yung‐Han, Wen, Cheng‐Yen, Lin, Wendy Jessica, Hsiao, Fei‐Man, Chiu, Ya‐Ping, Tsukagoshi, Kazuhito, Osada, Minoru, Sasaki, Takayoshi, and Chen, Chun‐Wei

Subjects
SOLAR cells, MOLECULAR self-assembly, PEROVSKITE, ATOMIC layer deposition, TITANIUM dioxide
Abstract

Abstract: A novel atomic stacking transporting layer (ASTL) based on 2D atomic sheets of titania (Ti1−δO2) is demonstrated in organic–inorganic lead halide perovskite solar cells. The atomically thin ASTL of 2D titania, which is fabricated using a solution‐processed self‐assembly atomic layer‐by‐layer deposition technique, exhibits the unique features of high UV transparency and negligible (or very low) oxygen vacancies, making it a promising electron transporting material in the development of stable and high‐performance perovskite solar cells. In particular, the solution‐processable atomically thin ASTL of 2D titania atomic sheets shows superior inhibition of UV degradation of perovskite solar cell devices, compared to the conventional high‐temperature sintered TiO2 counterpart, which usually causes the notorious instability of devices under UV irradiation. The discovery opens up a new dimension to utilize the 2D layered materials with a great variety of homostructrual or heterostructural atomic stacking architectures to be integrated with the fabrication of large‐area photovoltaic or optoelectronic devices based on the solution processes. [ABSTRACT FROM AUTHOR]

Published
2018
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49. Interface engineering of CdS/CZTSSe heterojunctions for enhancing the Cu2ZnSn(S,Se)4solar cell efficiency

Author

Chen, Wei-Chao, Chen, Cheng-Ying, Lin, Yi-Rung, Chang, Jan-Kai, Chen, Chun-Hsiang, Chiu, Ya-Ping, Wu, Chih-I., Chen, Kuei-Hsien, and Chen, Li-Chyong

Abstract

Interface engineering of CdS/CZTS(Se) is an important aspect of improving the performance of buffer/absorber heterojunction combination. It has been demonstrated that the crossover phenomenon due to the interface recombination can be drastically eliminated by interface modification. Therefore, in-depth studies across the CdS/CZTS(Se) junction properties, as well as effective optimization processes, are very crucial for achieving high-efficiency CZTSSe solar cells. Here, we present a comprehensive study on the effects of soft-baking (SB) temperature on the junction properties and the corresponding optoelectronic and interface-structural properties. Based on in-depth photoemission studies corroborated with structural and composition analysis, we concluded that interdiffusion and intermixing of CZTSSe and CdS phases occurred on the Cu-poor surface of CZTSSe at elevated SB temperatures, and the interface dipole moments induced by electrostatic potential fluctuation were thus significantly eliminated. In contrast, with low SB temperature, the CdS/CZTSSe heterojunction revealed very sharp interface with very short interdiffusion, forming interface dipole moments and drastically deteriorating device performance. These post thermal treatments also significantly suppress defect energy level of interface measured by admittance spectroscopy from 294 to 109 meV due to CdS/CZTSSe interdiffusion. Meanwhile, the interdiffusion effects on the shift of valence band maximum, conduction band minimum and band offset across the heterojunction of thermally treated CdS/CZTSSe interface are spatially resolved at the atomic scale by measuring the local density of states with cross-sectional scanning tunneling microscopy and spectroscopy. A significant enhancement in the power conversion efficiency from 4.88% to 8.48% is achieved by a facile interface engineering process allowing a sufficient intermixing of CdS/Cd and CZTSSe/Se phases without detrimental recombination centers.

Published
2019
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50. Control of the Metal–Insulator Transition at Complex Oxide Heterointerfaces through Visible Light

Author

Lin, Jheng‐Cyuan, primary, Tra, Vu Thanh, additional, Tsai, Dung‐Sheng, additional, Lin, Tai‐Te, additional, Huang, Po‐Cheng, additional, Hsu, Wei‐Lun, additional, Wu, Hui Jun, additional, Huang, Rong, additional, Van Chien, Nguyen, additional, Yoshida, Ryuji, additional, Lin, Jiunn‐Yuan, additional, Ikuhara, Yuichi, additional, Chiu, Ya‐Ping, additional, Gwo, Shangjr, additional, Tsai, Din Ping, additional, He, Jr‐Hau, additional, and Chu, Ying‐Hao, additional

Published
2015
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