532 results on '"Chiu, Hsien-Chin"'
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2. Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination
3. 1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
4. Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts.
5. Low-Mg out-diffusion of a normally off p-GaN gate high-electron-mobility transistor by using the laser activation technique
6. Impact of Al2O3 stress liner on two-dimensional SnS2 nanosheet for photodetector application
7. Mechanical tensile strain for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on a silicon-on-insulator substrate
8. Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates
9. Review of Recent Progress on Vertical GaN-Based PN Diodes
10. Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method
11. Inkjet-printed silver films on textiles for wearable electronics applications
12. Microwave Resonators Embedded With Carbon Nanotubes for Real-Time Gas Sensing
13. Fully Inkjet-Printed Gas-Sensing Antenna Based on Carbon Nanotubes for Wireless Communication Applications
14. Vertical Gan Schottky Barrier Diodes with Ohmic Contact on N-Polar by the Atomic Layer Deposition of Aluminum Oxide Interfacial Layer
15. Stability of GaN HEMT Device Under Static and Dynamic Gate Stress
16. Electrical Performance and Reliability Analysis of Vertical Gan Schottky Barrier Diodes with Dual-Ion Implanted Edge Termination
17. Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design.
18. Inkjet-printed vertical interconnects for ultrathin system-on-package technology
19. Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage
20. AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers
21. Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment
22. A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design
23. Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs
24. Effect of AlN spacer layer thickness on AlGaN/GaN/Si Schottky barrier diodes
25. Fully inkjet-printing of metal-polymer-metal multilayer on a flexible liquid crystal polymer substrate
26. Improved reverse recovery characteristics of low turn-on voltage AlGaN/GaN Schottky barrier diodes with anode edge AlON spacers
27. The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment
28. The device characteristics of Ir- and Ti-based Schottky gates AlSb/InAs high electron mobility transistors
29. Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal
30. Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals
31. N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator
32. A V-band low insertion loss GaAs bandpass chip filter using CMRC technology
33. Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer
34. Device characteristics of AlGaN/GaN MIS–HEMTs with high-k HfxZr1−xO2 (x = 0.66, 0.47, 0.15) insulator layer
35. Band offsets and electrical stability characterization of Zr-doped ZnO thin-film transistors with a Gd2O3 gate insulator
36. An investigation of device reliability for a micro-machined AlGaN/GaN/Si high electron mobility transistor using low frequency noise measurement
37. Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure
38. Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors
39. Microwave Gas Sensor Based on Carbon Nanotubes Loaded on Open Loop Ring Resonators
40. Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor
41. Wound-Dressing-Based Antenna Inkjet-Printed Using Nanosilver Ink for Wireless Medical Monitoring
42. High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate
43. Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis
44. Inkjet printing RF bandpass filters on liquid crystal polymer substrates
45. Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design
46. Low frequency noise in field-plate multigate AlGaN/GaN single-pole–single-throw RF switches on silicon substrate
47. Characteristics and reliabilities on the Dicing before Grinding (DBG) process in nMOSFETs
48. A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate
49. High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design
50. Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles
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