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In recent years, ciliate infections have caused serious casualties to corals in the ocean. Infected corals die within a short period of time, which not only poses a threat to wild coral reefs, but also has a major impact on large scale aquaculture of coral. Clove is a kind of Chinese medicine with antifungal, antibacterial, antiviral, insecticidal, and other functions. Clove is a natural product. If it can be used in the treatment of coral ciliates, it will reduce this threat to the environment. The clove extract was diluted with sterile seawater to 500 ppm, 1500 ppm, 2500 ppm, 5000 ppm, 7500 ppm, and 10,000 ppm to carry out virulence test on ciliates. The results show that the LC

Nutritional requirements are critical in the process of coral aquaculture. In addition to energy from symbiotic algae, corals obtain sufficient nutrition through heterotrophic feeding. Microalgae and yeast are commonly used as nutritional supplements for many aquaculture organisms. In addition, if artificial feed can match or improve upon the nutritional supplementation provided by microalgae and yeast in the case of G. columna, then feeding this coral would be markedly easier. Hence, this article preliminarily discusses feeds suitable for G. columna. In this study, artificial PUFA rich in animal protein (R), Saccharomyces cerevisiae, Isochrysis galbana tml, and Nannochloropsis oculate were fed to G. columna at quantities of 5% and 10% of body weight. Growth, survival, body composition, and digestive enzymes were assessed. Regarding body composition, the coral’s protein content is higher than that of carbohydrate or fat, thus, evaluating the heterotrophic nutrition of G. columna by using protein absorption is appropriate. The protease content is also high in digestive enzymes. Protein content, protease activity, and specific growth rate were significantly higher in the R group than in other groups. The number of polyps in the groups fed R at 5% and 10% of body weight increased by 40.00 ± 2.43 and 47.33 ± 0.89 number, respectively, significantly greater increases than those achieved in the other groups (p &lt, 0.05). Changes in body composition and digestive enzymes over a 24-h period were compared to determine the optimal feeding time. Protein content and protease activity increased markedly between 6:00 and 12:00. The experimental results suggest that R can improve the activity of G. columna digestive enzymes and their protein and lipid content in body tissue, shorten the cultivation time, and enhance the profitability of coral aquaculture.

Ambient mass spectrometry thermal desorption-electrospray ionization/mass spectrometry (TD-ESI/MS) can rapidly identify chemicals without pretreatment of biological samples. This study used a rapid semi-quantitative TD-ESI/MS screening technique for the probe skin sampling of melamine workers occupationally exposed to different ambient melamine concentrations to create avatar-like body images, which were then used to study temporal and dynamic changes in nephrotoxic melamine exposure. We enrolled four voluntary melamine workers from one factory, each from one of four worksites. Melamine exposure was highest in manufacturing and molding, followed by grinding and polishing, packing, and administration, the lowest. Skin samples were collected Friday (end-of-shift) and Monday (pre-shift). Early morning one-spot urine samples were also collected right after skin sampling. 2198 probe skin samples were collected and subjected to semi-quantitative TD-ESI/MS analyses of melamine chemical within 40 h. After normalization, converted body image scores revealed exposure to be highest in the manufacturing worker on Friday and lowest in the administrative worker on Monday. The absolute differences (Friday minus Monday) of normalized body image scores were all significantly positive in each individual worker and across all four workers (permutation test, all p-values0.002). The slope estimates of the linear regression line between body image scores and urinary melamine levels were 0.81 (p-value = 0.008). We concluded that this fast and non-invasive technique can potentially be used to study temporal and dynamic changes in exposure to occupational hazards. A future study of developing an automatic and reproducible TD-ESI/MS sampling platform is needed.

In this letter, we determine the importance of the electrical field distribution and strength during the switching process by demonstrating different trends in the degree of reset and the reset pulse time. In general, a longer reset pulse time results in a higher reset energy; a higher reset energy leads to a higher degree of reset, which we obtained by applying different width square waves. But quite notably, the opposite result was obtained using triangle waves, where a higher degree of reset occurred with a shorter rising time and lower reset energy. We believe that this is due to the electric field effect: if the voltage rises faster than the filament oxidation, the device can produce a larger effective electric field and a higher resistance in the reset process. To further investigate the mechanism, the procedure of the reset process was analyzed in detail, and COMSOL simulation is also carried out for confirmation.

In this paper, we discover an operation method that can effectively decrease the forming voltage in resistance random access memory (RRAM). Forming voltage can be reduced by either increasing the rising time of the forming-waveform or by increasing the temperature in the forming process. However, the resulting electronic RRAM characteristics after each of these methods differ. While increasing the rising time causes greater damage to the switching layer due to longer accumulation of charge, increasing temperature in the forming process does not. The high temperature-formed RRAM excels in retention and endurance tests, proving an effective means to decrease forming voltage.

Enlargement of memory window through forming compliance current was demonstrated in Gd:SiO2 resistive random access memory (RRAM) with a gadolinium (Gd) electrode. Lower forming compliance current for Gd:SiO2 RRAM with a Gd electrode results in larger memory window as compared with the RRAM with a Pt electrode. Through analyses on the current conduction mechanism, we demonstrate that a lower forming compliance current leads to a thinner conductive filament forming and less oxygen ions penetrating into Gd electrode, which caused higher on current and lower off current. Furthermore, a possible resistive switching model was proposed to explain the effect of Gd electrode on RRAM device.

In this paper, we implement a post-oxidation method to modify surface characteristics of indium tin oxide (ITO) films by using an O2 inductively coupled plasma (ICP) treatment. Based on field emission-scanning electron microscope (FE-SEM) and atomic force microscope (AFM) analysis, we found that the surface morphologies of the ITO films become slightly flatter after the O2 plasma treatment. The optical characteristics and X-ray diffraction (XRD) experiments of either pure ITO or O2 plasma treated ITO films were also verified. Even though the XRD results showed no difference from bulk crystallizations, the oxygen concentrations increased at the film surface after O2 plasma treatment, according to the XPS inspection results. Moreover, this study investigated the effects of two different plasma treatment times on oxygen concentration in the ITO films. The surface sheet resistance of the plasma treated ITO films became nearly non-conductive when measured with a 4-point probe. Finally, we applied the O2 plasma treated ITO films as the insulator in resistive random access memory (RRAM) to examine their potential for use in resistive switching storage applications. Stable resistance switching characteristics were obtained by applying the O2 plasma treatment to the ITO-based RRAM. We also confirmed the relationship between plasma treatment time and RRAM performance. These material analyses and electrical measurements suggest possible advantages in using this plasma treatment technique in device fabrication processes for RRAM applications.

In this letter, we propose a resistive switching memory with outstanding comprehensive performance by inserting buffer layers of silicon dioxide doped with boron nitride (BN: SiO2 into HfO resistance random access memory (RRAM). X-ray photoelectron spectroscopy (XPS) spectra confirms that hexagonal boron nitride (h-BN) exists in the BN:SiO2 layer. The Pt/BN:SiO2/HfO/BN:SiO2 /TiN structure was observed to have superior switching endurance >1012 cycles) and higher stability. This can be attributed to the oxygen ions generated during the forming process being localized by h-BN flakes which are formed during the sputter process. A physical model is proposed to explain the resistive switching behavior of HfO RRAM with the inserted BN-based layers.

In this study, an O2 inductively coupled plasma (ICP) treatment was developed in order to modify the characteristics of indium tin oxide (ITO) film for use as an insulator in resistive random access memory (RRAM). After the O2 plasma treatment, the previously conductive ITO film is oxidized and becomes less conductive. In addition, after capping the same ITO material for use as a top electrode, we found that the ITO/ITO(O2 plasma)/TiN device exhibits very stable and robust resistive switching characteristics. On the contrary, the nontreated ITO film for use as an insulator in the ITO/ITO/TiN device cannot perform resistance switching behaviors. The material analysis initially investigated the ITO film characteristics with and without O2 plasma treatment. The surface was less rough after O2 plasma treatment. However, the molar concentration of each element and measured sheet resistance results for the O2-plasma-treated ITO film were dramatically modified. Next, electrical measurements were carried out to e...

This study proposes a method for a HfO2-based device to exhibit both resistive switching (RS) characteristics as resistive random access memory (RRAM) and selector characteristics by introducing vanadium (V) as the top electrode. This simple V/HfO2/TiN structure can demonstrate these two different properties depending on forming polarities. The RS mechanism is activated by a positive forming bias. In contrast, the selector property is induced by a negative forming bias. The material analyses firstly confirm the existence of V in the top electrode. Then the electrical measurements for the same V/HfO2/TiN structures but with different forming polarities were carried out to further investigate their DC sweeping characteristics to act as either a selector or RRAM device. Furthermore, reliability tests for both selector and RRAM devices were also conducted to confirm their switching stabilities. Finally, current fitting methods and temperature influence experiments were performed to investigate the carrier transport mechanisms. Finally, physical models were proposed to illustrate the selector property and RS mechanism for selector and RRAM devices, respectively. This simple device structure with its easy operating method accomplishes a significant advancement of devices combining both selector properties and RRAM for remarkable real applications in the near future.

A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM). After the SCF-nitridation treatment, the memory window for the N:ITO electrode device was increased from 40 to 100. Moreover, the operation voltages (VSET and VRESET) and currents (ION and IOFF) were remarkably decreased, in which the IOFF was decreased to 65 nA. The possible reason for the performance improvement of resistive switching memory with the ITO transparent electrode induced by SCF-nitridation treatment was carefully explored.

This paper investigates the characteristics of applying indium–tin oxide (ITO) with and without nitride gas (N2) as the insulator in resistive random access memory (RRAM). After cosputtering an ITO target with N2 as the insulator and capping the same ITO material as the top electrode, the device exhibits rectifier and resistance switching characteristics before and after the forming process, respectively. The Schottky diodelike rectifier mechanism was also verified by various temperature measurements. Furthermore, robust resistance switching at a positive forming voltage, smaller than that required during negative bias forming, can be achieved. Both positive and negative forming processes are examined with current fitting results, which show different dominant mechanisms when using positive or negative biases. All these mechanisms have also been verified by temperature effect experiments, which confirmed the dominant conduction mechanisms. This, in combination with the fact that the positive forming voltage itself is smaller than the negative forming voltage, and decreases with device scale down, provides two highly beneficial results. This good performance achieved by using ITO with N2 suggests significant progress of RRAM and remarkable potential applications.

In this paper, indium-tin-oxide (ITO) was used to act as both insulator and top electrode in resistive random access memory (RRAM) on identical bottom substrates. This is achieved by cosputtering an ITO target with nitride (N2) or oxygen (O2) gas as the insulator; then capping by an ITO electrode, such that both the rectifier and RRAM characteristics can be achieved before and after a forming process, respectively. In contrast, using pure ITO as an insulator does not exhibit RRAM behavior. To verify the rectifier and RRAM characteristics, material analyses and electrical measurements at various temperatures were conducted. Reliability tests including retention and endurance were also applied to verify the resistance switching stability. Finally, the rectifier and RRAM conduction models were proposed to examine the resistance switching behaviors. By applying the ITO material as both electrode and insulator, the resistance switching characteristic with high reliability is thus obtained.

Non-volatile memory (NVM) will play a decisive role in the development of the next-generation of electronic products. Therefore, the development of next-generation NVM is urgent as widely applied flash memory is facing its physical limit. Among various next-generation NVMs, Resistive Random Access Memory (RRAM) is a promising candidate for future memory due to its high-efficiency, high-speed and energy-saving characteristics. In recent years, continuous improvement and in-depth investigation in both materials and electrical switching mechanisms have not only lead to a breakthrough in the performance of digital NVM, but also lead to other possible memory functionality. This paper describes new findings and perspectives on various RRAM devices with different laminated structures and materials, and classifies RRAM into four categories according to different resistive switching mechanisms, from which the four elements are (1) anion-type RRAM: redox reaction and migration of oxygen ions, (2) cation-type RRAM: redox reaction and migration of cation ions, (3) carbon-based RRAM: the stretch of C C bond lengths due to oxygen and hydrogen dual ions, (4) oxide-based electrode: oxygen accumulation in oxide-based electrode.

This letter investigates the characteristics of doping gadolinium (Gd) in an indium-tin-oxide (ITO) electrode in HfO2-based resistive random access memory (RRAM). Identical bottom electrodes and insulators were made but then capped by either pure ITO or a Gd:ITO top electrode. Doping Gd in the ITO electrode produces lower operation currents in both high-resistance state (HRS) and low-resistance state (LRS) as well as enlarging the memory window. This excellent performance suggests a remarkable potential to improve RRAM applications. Schottky emission mechanism dominates both HRS and LRS according to current fitting results, and is confirmed by temperature effect experiments. The resistive switching behavior of the Gd:ITO device is explained by our model and is also confirmed by material analysis and electrical measurements. Furthermore, reliability tests verify the Gd:ITO device’s capability to perform data storage as a nonvolatile memory.

Oxide based resistive switching memory are the promising candidates for future non-volatile memory according to fast programing, low power operation, scalability and compatibility to the current CMOS process. Among, SiOx single layer resistive switching devices have been widely studied and characterized. The SiOx single layer resistive memory has good compatibility to CMOS fabrication process. However, it can only be programmed under the vacuum or non-oxidized ambient. Also, the previous results reported on SiOx-based memristors indicate that the electroforming and programming voltage is relatively higher than the other dielectric materials and obstructed for low-power applications. In this work, by using SiOx/HfOx stacking engineering, we have developed a low-voltage operation (< 2V) for SiOx-based ReRAM. The results show that with HfOx (3nm) on bottom, the metal-insulator-semiconductor (MIS) structures exhibit resistive switching at low voltage (x-based MIS devices which exhibit bipolar-type resistive switching behaviors with small memory window.Clearly, SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also further reduces the switching voltage below 2V. Figure 1 shows the results of three different structures, including SiOx single layer memristor, SiOx/HfOx bilayer memristor and HfOx single layer memristor. In terms of operation environment condition, inserting the HfOx layer would help the SiOx memristor to be able to programmed either under a pressure of 1E-4 torr or in the atmosphere. The HfOx single layer memristor has the lowest electroforming voltage of 2.3 V, and which in SiOx/HfOx stacks has been reduced significantly to 5 V comparing which of 14 V for SiOx single layer. For the SiOx/HfOx bilayer, a memory window of 4 decades is achieved and comparable to that of SiOx single layer, and larger than that of single layer HfOx by 2 decades. In terms of operation voltage, the set voltage is reduced from 4V to 2 V and the reset voltage is also suppressed significantly from 10 V to 0.3 V by inserting the 3 nm HfOx layer. Figure 2 shows the TEM images of both SiOx single layer memristor and SiOx/HfOx bilayer memristor. The 3 nm HfOx was deposited on N+ Si wafer at 250 oC by atomic layer deposition followed by 30 nm SiO2 deposition using e-beam evaporator and 160 nm TaN depositing by sputtering. Figure 3. The single layer HfOx-based MIS devices resistive switching behaviors. (a) The electroforming process, resistive switching behaviors in 20 times cycling. (b) The switching voltage (SET/RESET) and states (HRS/LRS) distribution. Figure 1

This letter investigates the double-ended resistive switching characteristics of indium tin oxide (ITO) resistance random access memory (RRAM). Resistive switching can be achieved around both the active TiN electrode and the inert Pt electrode. In addition, complementary resistance switching (CRS) characteristics can be observed without current compliance during dc voltage sweep operations. Electrical measurement data fitting results indicate that the oxygen-rich ITO near top and bottom electrodes works as a double-ended resistive switching layer. Based on the analysis of the current conduction mechanism, we propose a physical model to interpret the CRS behaviors in ITO RRAM devices.

Indium–tin–oxide (ITO) is investigated as the top electrode material in HfO2-based resistive random access memory cells. Experimental results show that in contrast to a metal (Pt) electrode, an ITO electrode provides for self-limiting current flow during the forming and SET processes, so that no compliance limit is necessary. This provides for low-power consumption, high endurance ( $> 10^{7}$ cycles), and short SET/RESET transition times ( $\sim 50$ ns). We propose that this is because ITO is an oxygen-vacancy-rich material, providing bulk storage for oxygen ions rather than surface storage as a metal electrode.

A technique was proposed to concentrate the distribution of set voltages. After a plasma treatment, the stability of the high-resistive state (HRS) increased, and the distribution of set voltages was more concentrated at 0.8 V, with a sufficient HRS/LRS resistive ratio (∼100x). In addition, the surface of the TiN electrode became rougher, causing oxygen to enter the TiN electrode and form a TiON layer, which acts as an oxygen reservoir. The reservoir is confirmed and the conduction model is supported by both electrical and material analyses. We propose that the observed improvement is due to the difference in the TiN electrode surface.

In this letter, we demonstrate the differing influences of a nitrogen buffering effect in both the switching layer and the indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) which has undergone an NH3 treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar $I$ – $V$ characteristics compared with the ITO/Hf:SiO2/TiN control structure RRAM. The nitrogen in the ITO electrode layer, however, works as an oxygen buffer and makes it easier for the redox reaction to occur, leading to improvements in performance, such as concentrated voltages and better endurance.

The study aimed to examine whether urinary 8-hydroxy-2'-deoxyguanosine (8-OHdG) could serve as a biomarker for assessing sperm DNA integrity. Urine and semen samples were collected from 124 coke-oven workers, who had chronically been exposed to polycyclic aromatic hydrocarbons (PAHs), from a steel plant in Kaohsiung, Taiwan. The coke-oven workers were divided into two subgroups: topside-oven workers and side-oven workers. Sperm DNA integrity was assessed in terms of DNA fragmentation and 8-oxo-7,8-dihydro-2'-deoxyguanosine (8-oxodGuo). Urine samples were used to detect 1-hydroxypyrene (1-OHP) and urinary 8-OHdG, which served to assess exposure to PAHs and the whole body oxidative stress, respectively. Urinary 1-OHP concentrations were significantly higher in the topside-oven workers than the side-oven workers (p = 0.02). Sperm 8-oxodGuo concentrations were correlated with percentages of sperm fragmentation (p = 0.044), but urinary 8-OHdG levels failed to correlate with sperm 8-oxodGuo levels and with percentages of fragmentation. In conclusion, exposure to PAHs was linked to increased oxidative stress on sperm. However, urinary 8-OHdG may not be a suitable biomarker for examining sperm DNA damage associated with oxidative stress.

This study proposes a method for a HfO

For the first time, a comprehensive study of Vanadium oxide-based selector characteristics with a universal model observed by thermal and electrical induced threshold switching (TS) phenomena at interface is presented in this work. The model can explain that the resistance evolution by thermal temperature in TS behaviors, as well as the resistance gradually increases with cycling (“seasoning effect”). Compatible current density (107∼109 A/cm2) and selectivity (∼100) with physical understanding of evolution in energy barrier and MIT metallic state modulation are studied. The results show a promising design guideline for future storage-class memory (SCM) applications.

We have previously investigated the automatic current compliance property for indium tin oxide (ITO) resistance random access memory (RRAM). Traditionally, for the purpose of protecting RRAM, it is necessary to set equipment current compliance during the set and forming processes of RRAM devices. ITO RRAM devices, however, have an intrinsic capability to limit their current. This letter examines this ITO RRAM current compliance in depth by applying a varied stop-voltage measurement method, where different negative stop voltages were adopted to manipulate oxygen ions. Combined with material analysis and conduction current fitting, a model was established.

In this study, an O

This paper studies the degradation behaviors in IV characteristics and the corresponding improvement for p-channel double diffused drain metal-oxide-semiconductor (DDDMOS) transistors after hot carrier stress (HCS). There is an apparent current which is flowed from source to drain in the off-region after HCS. According to the IV characteristic comparisons between different device structures and ISE-TCAD simulation results, the location and mechanism of this abnormal off-current can be demonstrated. Furthermore, this off-current is suppressed effectively by the different process flows in STI fabrication for this DDDMOS device.

This work studies the mechanism of identical photo-induced leakage current in a-InGaZnO 4 thin film transistors during reverse gate voltage sweep. There is the identical off-state current with the reverse sweep under UV light irradiation, and the photocurrent for UV light exposure region near the source electrode is more significant than that near the drain electrode, which is different from photocurrent mechanism of low temperature polysilicon TFTs. This is because the photo-generated electrons increase the carrier concentration in a-InGaZnO 4 bulk, causing the reduced depletion width of the active layer. Therefore, the back channel of active layer is out of gate control.

In this letter, we investigated a new interface-type conduction mechanism in ITO/Ga 2 O 3 :ITO/TiN resistance random access memory induced by varying forming current compliance. This conduction showed a typical bipolar resistive switching (RS) and a size effect experiment was applied to confirm that the conduction mechanism was an interface-type when forming current compliance was set below 1mA. Current fittings of both high resistance state (HRS) and low resistance state (LRS) showed Schottky emission. Furthermore, a conduction model was provided to separate this new conduction mechanism in ITO material relevant research from traditional filament-type.

This letter investigates the effect of negative bias stress induced abnormal degradation in amorphous InGaZnO thin-film transistors (TFTs) at high temperature. Drain current-gate voltage (I D -V G ) and capacitance-voltage (C-V) measurements are employed to analyze degradation mechanism. High temperature negative bias stress lead to not only a negative parallel shift in I D -V G but also a C-V distortion at off-state. This attributes to a barrier lowering effect nearby both drain and source sides according to symmetrical hole-trapping effect. Furthermore, both on-current and subthreshold swing will be improved due to the localized hole-trapping near source and drain.

We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes to further minimize total synaptic power consumption due to sneak-path currents and demonstrate the capability for spike-induced synaptic behaviors, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation, long-term depression, and spike-timing dependent plasticity are demonstrated systemically with comprehensive investigation of spike waveform analyses and represent a potential application for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from the (SiH)2 defect to generate the hydrogenbridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with largescale complementary metal-oxide semiconductor manufacturing technology.

Intrinsic unipolar SiOx-based Resistive-RAM (ReRAM) characteristics have been investigated. The cross-bar MIM structures have been examined under AC frequency response, by varying device area, temperature and current states. The results provide additional insights into the hopping/switching mechanisms. For the first time, by using SiOx/HfOx stacking engineering, we have developed a low-voltage operation (< 2V) for SiOx-based ReRAM. The SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also further reduces the switching voltage below 2V.

We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiO2–based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation (LTP), long-term depression (LTD) and spike-timing dependent plasticity (STDP) are demonstrated systematically using a comprehensive analysis of spike-induced waveforms and represent interesting potential applications for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from (SiH)2 to generate the hydrogen bridge defect and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with large-scale CMOS manufacturing technology.

A repeated measurement cohort study was conducted to determine whether 2-napthol can be a suitable biomarker for evaluating the magnitude of exposure to PAHs from coke oven emissions. Time-course patterns of urinary 2-naphthol levels in coke-oven workers were examined. Also, the correlation between urinary 2-naphthol levels and PAHs from personal breathing zone samples was analyzed while examining and adjusting possible confounding factors, such as smoking alcohol consumption, and age of human subjects. A total of 8 spot urine samples were collected from each high-exposure group (topside-oven workers, n = 17) and low-exposure group (side-oven workers, n = 25) during the whole working cycle, which consists of six consecutive working days followed by 2 days off. Personal breathing zone samples were collected to quantify PAH intake. A questionnaire was distributed and collected from each worker for assessment of demographic parameters. Our results confirmed that the topside-oven area contained significantly higher PAH levels than the side-oven area. Urinary 2-naphthol levels correlated with the levels of PAH species, including pyrene, benzo[k]fluoranthene, benezo[g,h,i]pyrene, naphthalene, phenanthrene, anthracene, indeno[1,2,3-cd]pyrene, benzo[k]fluoranthene, and total PAHs. During the working cycle, urinary 2-naphthol levels remained stable at around 46-97 ng/mg creatinine during the working days and dramatically increased during the off days. After stratification of data based on smoking status, smokers had significantly higher urinary 2-naphthol levels than non-smokers, and 2-naphthol levels positively correlated with smoking status. Coke-oven emissions are a source of exposure to naphthalene. Also, smoking is a significant source of exposure to naphthalene and served as a confounder factor. Due to its abundance, positive association with total PAHs and certain carcinogenic PAH compounds, and slower elimination kinetics, urinary 2-naphthol may have the potential to serve as a biomarker for PAH exposure, when smoking status is carefully adjusted.

We demonstrate the extra influence of a nitrogen buffering effect in the top indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) with an NH3 treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar current-voltage (I-V) characteristics compared to the ITO/Hf:SiO2/TiN control structure RRAM. However, the effect in the ITO electrode layer, makes it easier for the redox reaction to occur, leading to improved endurance and concentrated voltages.

In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.