Search

Your search keyword '"Chicoine, M."' showing total 207 results
Start Over Author "Chicoine, M."
207 results on '"Chicoine, M."'

1. Optical and mechanical properties of ion-beam-sputtered MgF$_2$ thin films for gravitational-wave interferometers

Author

Granata, M., Amato, A., Bischi, M., Bazzan, M., Cagnoli, G., Canepa, M., Chicoine, M., Di Michele, A., Favaro, G., Forest, D., Guidi, G. M., Maggioni, G., Martelli, F., Menotta, M., Montani, M., Piergiovanni, F., and Schiettekatte, F.

Subjects
Physics - Instrumentation and Detectors
Abstract

Brownian thermal noise associated with highly reflective coatings is a fundamental limit for several precision experiments, including gravitational-wave detectors. Research is currently ongoing to find coatings with low thermal noise that also fulfill strict optical requirements such as low absorption and scatter. We report on the optical and mechanical properties of ion-beam-sputtered magnesium fluoride thin films, and we discuss the application of such coatings in current and future gravitational-wave detectors.

Published
2021
Full Text
View/download PDF

2. Raman-based mapping and depth-profiling of the relaxation state in amorphous silicon.

Author

Lussier, A. W., Bourbonnais-Sureault, D., Chicoine, M., Martel, R., Martinu, L., Roorda, S., and Schiettekatte, F.

Subjects
AMORPHOUS silicon, DEPTH profiling
Abstract

We show that the micro-scale variations in the relaxation state of amorphous silicon (a-Si) can be well-identified by Raman mapping over hundreds or thousands of μm2 in 1–2 h. Pure and relaxed a-Si is obtained by self-implantation in crystalline silicon (c-Si) followed by anneal at 500 °C. It is then locally re-implanted over micro-sized patterns to produce unrelaxed a-Si zones. Raman mappings are obtained by pointwise confocal μ-Raman and hyperspectral Raman imaging. We also measure the depth profiles of the relaxation state in re-implanted a-Si by scanning the edge of a re-implanted sample. We infer from the depth profiles that the minimal damage dose to fully de-relax a-Si is 0.04 displacements per atoms, which is an order of magnitude smaller than the fluence needed to fully amorphize c-Si. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

5. In-plasma analysis of plasma–surface interactions

Author

Vinchon, P., primary, Asadollahi, S., additional, Coté, C., additional, Marcet, S., additional, Atallah, S., additional, Dessureault, E., additional, Chicoine, M., additional, Sarkissian, A., additional, Leonelli, R., additional, Roorda, S., additional, Schiettekatte, F., additional, and Stafford, L., additional

Published
2023
Full Text
View/download PDF

6. Lifetimes of states in 19Ne above the 15 O + alpha breakup threshold

Author

Mythili, S., Davids, B., Alexander, T. K., Ball, G. C., Chicoine, M., Chakrawarthy, R. S., Churchman, R., Forster, J. S., Gujrathi, S., Hackman, G., Howell, D., Kanungo, R., Leslie, J. R., Padilla, E., Pearson, C. J., Ruiz, C., Ruprecht, G., Schumaker, M. A., Tanihata, I., Vockenhuber, C., Walden, P., and Yen, S.

Subjects
Nuclear Experiment
Abstract

The 15O(alpha,gamma)19Ne reaction plays a role in the ignition of Type I x-ray bursts on accreting neutron stars. The lifetimes of states in 19Ne above the 15O + alpha threshold of 3.53 MeV are important inputs to calculations of the astrophysical reaction rate. These levels in 19Ne were populated in the 3He(20Ne,alpha)19Ne reaction at a 20Ne beam energy of 34 MeV. The lifetimes of six states above the threshold were measured with the Doppler shift attenuation method (DSAM). The present measurements agree with previous determinations of the lifetimes of these states and in some cases are considerably more precise.

Published
2007
Full Text
View/download PDF

7. Lifetime of 19Ne*(4.03 MeV)

Author

Kanungo, R., Alexander, T. K., Andreyev, A. N., Ball, G. C., Chakrawarthy, R. S., Chicoine, M., Churchman, R., Davids, B., Forster, J. S., Gujrathi, S., Hackman, G., Howell, D., Leslie, J. R., Morton, A. C., Mythili, S., Pearson, C. J., Ressler, J. J., Ruiz, C., Savajols, H., Schumaker, M. A., Tanihata, I., Walden, P., and Yen, S.

Subjects
Nuclear Experiment
Abstract

The Doppler-shift attenuation method was applied to measure the lifetime of the 4.03 MeV state in 19Ne. Utilizing a 3He-implanted Au foil as a target, the state was populated using the 20Ne(3He,alpha)19Ne reaction in inverse kinematics at a 20Ne beam energy of 34 MeV. De-excitation gamma rays were detected in coincidence with alpha particles. At the 1 sigma level, the lifetime was determined to be 11 +4, -3 fs and at the 95.45% confidence level the lifetime is 11 +8, -7 fs., Comment: 6 pages, submitted to Phys. Rev. C

Published
2006
Full Text
View/download PDF

10. Engineering visible light emitting point defects in Zr-implanted polycrystalline AlN films.

Author

Aghdaei, A., Pandiyan, R., Ilahi, B., Chicoine, M., El Gowini, M., Schiettekatte, F., Fréchette, L. G., and Morris, D.

Subjects
POINT defects, VISIBLE spectra, ATOMIC force microscopy, OPTICAL properties, RAMAN spectroscopy
Abstract

We have investigated the impact of thermal annealing gaseous atmosphere of argon, nitrogen, and forming gas on the structural and optical properties of thin polycrystalline AlN films subjected to high-energy zirconium ions implantation. X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy measurements show that the structural and morphological properties of the Zr-implanted AlN films depend on the annealing gaseous environment. Post-implantation annealing under argon atmosphere yields the lowest structured surface roughness with increased grain size. Photoluminescence spectroscopy revealed multiple point defects and defect complexes related emission bands in the visible range. A series of absorption bands have been observed using photoluminescence excitation spectroscopy. The origin of the emission or absorption bands is identified and attributed to various types of point defects and defect complexes, theoretically reported for AlN. New emission and absorption peaks at 1.7 eV (730 nm) and 2.6 eV (466 nm) , respectively, have been identified and attributed to the (ZrAl–VN)0 defect complexes. [ABSTRACT FROM AUTHOR]

Published
2020
Full Text
View/download PDF

14. Effects of Annealing on Residual Stress in Titania Germania Mixtures Deposited by Ion Beam Sputtering

Author

Randel, E., Davenport, A., Osovsky, R., Lalande, É, Chicoine, M., François Schiettekatte, Markosyan, A., Bassiri, R., Fejer, M. M., and Menoni, C. S.

Abstract

We report on the effects of annealing on the residual film stress in titania germania mixtures grown by ion beam sputter deposition. Understanding stress during processing is critical in designing robust multilayer coatings.

Published
2022

15. Optical and Mechanical Properties of Ion-Beam-Sputtered MgF 2 Thin Films for Gravitational-Wave Interferometers

Author

Granata, M., primary, Amato, A., additional, Bischi, M., additional, Bazzan, M., additional, Cagnoli, G., additional, Canepa, M., additional, Chicoine, M., additional, Di Michele, A., additional, Favaro, G., additional, Forest, D., additional, Guidi, G. M., additional, Maggioni, G., additional, Martelli, F., additional, Menotta, M., additional, Montani, M., additional, Piergiovanni, F., additional, and Schiettekatte, F., additional

Published
2022
Full Text
View/download PDF

16. Brain Metastases in Metastatic Cutaneous Melanoma: Patterns of Care and Clinical Outcomes in the Era of Immunotherapy and Targeted Therapy

Author

Chin, R.I., primary, Chen, K., additional, Abraham, C.D., additional, Robinson, C.G., additional, Perkins, S.M., additional, Johanns, T.M., additional, Hernandez-Aya, L.F., additional, Keller, J.W., additional, Dowling, J., additional, Rich, K., additional, Chicoine, M., additional, Kim, A.H., additional, Dunn, G.P., additional, Ansstas, G., additional, and Huang, J., additional

Published
2021
Full Text
View/download PDF

21. 3rd IANA (International Academy on Nutrition and Aging) Meeting Nutrition, Exercise & Alzheimer and Clinical Trials on Sarcopenia August 1–2, 2008 Hyatt Regency Tamaya Resort 1300 Tuyuna Trail Santa Ana Pueblo, NM USA

Author

Andrieu, S., Barberger-Gateau, P., Raffaitin, C., Berr, C., Tzourio, C., Dartigues, J. -F., Gin, H., Fitten, L. J., Ortiz, F., Fairbanks, L., Bartzokis, G., Lu, P., Ringman, J., Heyn, P. C., Locher, J. L., Salvà, A., Andrieu, S., Fernández, E., Vellas, B., van de Rest, O., Geleijnse, J. M., Kok, F. J., van Staveren, W. A., Beekman, A. T. F., Hoefnagels, W. H. L., de Groot, C. P. G. M., Angevaren, M., Aufdemkampe, G., Verhaar, H. J. J., Aleman, A., Vannees, L., Arkin, S., Florez, H., Gerstein, H., Sheridan, P., Bosch, J., Goldberg, R., Kaspar, K. M., Drawert, S. M., Marcus, R. L., Kidde, J., Dibble, L., Addison, O., LaStayo, P. C., Scarmeas, N., Stern, Y., Schupf, N., Luchsinger, J. A., Sharkey, J. R., Laditka, J. N., Laditka, S. B., Liu, R., Hochhalter, A., Robare, J. F., Türner, N., Judge, M., Foster, T. C., Erdos, B., Cudykier, I., Scarpace, P. J., Weiss, L. A., Bergstrom, J., Kritz-Silverstein, D., Barrett-Connor, Elizabeth, Yurko-Mauro, K., Nelson, E., Quinn, J., Sattler, F. R., Castaneda-Sceppa, C., Binder, E. F., Schroeder, E. T., Wang, Y., Bhasin, S., Kawakubo, M., Stewart, Y., Hahn, C., Colletti, P., Roubenoff, R., Yarasheski, K. E., Azen, S. P., Aoki, Y., Yamamoto, T., Otuka, T., Blanc-Bisson, C., Bourdel-Marchasson, I., Bocock, M. A., Keller, H. H., Bowman, G., Baxter, J., Oken, B., Frei, B., Traber, M., Leonard, S., Kaye, J., Shannon, J., Quinn, J., Carlsson, M., Gustafson, Y., Eriksson, S., Littbrand, H., Håglin, L., Danthiir, V., Wilson, C., Nettelbeck, T., Burns, N., Wittert, G., Noakes, M., Clifton, P., DiMaria-Ghalili, R. A., Grieger, J. A., Nowson, C. A., Wattanapenpaiboon, N. T., Holstein, J., Robinson, C., Hartmann, C., Rueb, S., Heffel, L., Dintaman, S., Reynolds, J., Fleming, L., Crull, M., Goldey, J., Serper, L. L., Hubbard, R., Westengard, J., Horning, M., Ishige, Y., Aoki, Y., Keller, H. H., Keller, H. H., LaStayo, P. C., Marcus, R. L., Smith, S., Kidde, J., Dibble, L., Butler, C., Hill, M., LaStayo, P. C., Marcus, R. L., Dibble, L., Kidde, J., Peters, C., Meier, W., Laughlin, G. A., Kritz-Silverstein, D., von Muhlen, D., Barrett-Connor, E., Olariu, L., Petcu, M., Tulcan, C., Pup, M., Otilingam, P., Gate, M., Pasinetti, G. M., Ray, B., Chauhan, N. B., Bailey, J. A., Lahiri, D. K., Shatenstein, B., Kergoat, M. -J., Reid, I., Chicoine, M. -E., Vaz, L., Stewart, R., Sabbah, W., Tsakos, G., D’Aiuto, F., Watt, R. G., Sturman, M., Kelly, J., Fleischman, D., Leurgans, S., Bennett, D., Morris, M. C., Suominen, M. H., Muurinen, S., Soini, H., Pitkälä, K. H., Yamamoto, T., Fujinoki, C., and Aoki, Y.

Published
2008
Full Text
View/download PDF

23. Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP

Author

Barba, D., Salem, B., Morris, D., Aimez, V., Schiettekatte, F., Beauvais, J., and Chicoine, M.

Subjects
Indium -- Electric properties, Gallium arsenide -- Electric properties, Ion implantation -- Methods, Phosphorus compounds -- Electric properties, Physics
Abstract

InGaAsP/InGaAs/InP single quantum well heterostructures after 20-keV phosphorus implantations performed with tilt angles set to 0 degree and 7 degree followed by rapid thermal annealing are studied. Photoluminescence and Raman studies reveal a significant improvement of the band-gap tuning process in the sample implanted at 0 degree.

Published
2005

25. Thomson parabola and time-of-flight detector cross-calibration methodology on the ALLS 100 TW laser-driven ion acceleration beamline

Author

Vallières, S., primary, Salvadori, M., additional, Puyuelo-Valdes, P., additional, Payeur, S., additional, Fourmaux, S., additional, Consoli, F., additional, Verona, C., additional, d’Humières, E., additional, Chicoine, M., additional, Roorda, S., additional, Schiettekatte, F., additional, and Antici, P., additional

Published
2020
Full Text
View/download PDF

26. III-V compliant substrates implemented by nanocavities introduced by ion implantation

Author

Chicoine, M., Beaudoin, C., Roorda, S., Masut, R.A., and Desjardins, P.

Subjects
Relaxation phenomena -- Research, Ion implantation -- Research, X-rays -- Diffraction, X-rays -- Usage, Physics
Abstract

A study presents a concept for the implementation of a compliant substrate by using a buried layer of nanocavities. The findings of the results show that strain relaxation are enhanced for hetrostructures grown on substrates with nanocavities.

Published
2005

27. Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs

Author

Barba, D., Aimez, V., Beauvais, J., Beerens, J., Drouin, D., Chicoine, M., and Schiettekatte, F.

Subjects
Zinc -- Electric properties, Raman effect -- Research, Gallium arsenide -- Electric properties, Physics
Abstract

Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the As outgassing mechanism and the disordering effects induced by ion implantation in Zn-doped GaAs with nominal doping level p=7 X 10(super 18) cm(super -3). Results make the Raman technique a simple and accurate technique to measure the range of defects induced by nuclear collisions during low-energy in implantation.

Published
2004

34. Bandgap and optical absorption edge of GaAs1–xBix alloys with 0 < x < 17.8%.

Author

Masnadi-Shirazi, M., Lewis, R. B., Bahrami-Yekta, V., Tiedje, T., Chicoine, M., and Servati, P.

Subjects
BAND gaps, LIGHT absorption, LIGHT absorbance, GALLIUM arsenide transistors, LIGHT transmission, PHOTOLUMINESCENCE, DENSITY functional theory
Abstract

The compositional dependence of the fundamental bandgap of pseudomorphic GaAs1–xBix layers on GaAs substrates is studied at room temperature by optical transmission and photoluminescence spectroscopies. All GaAs1–xBix films (0≤x≤17.8%) show direct optical bandgaps, which decrease with increasing Bi content, closely following density functional theory predictions. The smallest measured bandgap is 0.52 eV (~2.4 lm) at 17.8% Bi. Extrapolating a fit to the data, the GaAs1–xBix bandgap is predicted to reach 0 eV at 35% Bi. Below the GaAs1–xBix bandgap, exponential absorption band tails are observed with Urbach energies 3–6 times larger than that of bulk GaAs. The Urbach parameter increases with Bi content up to 5.5% Bi, and remains constant at higher concentrations. The lattice constant and Bi content of GaAs1–xBix layers (0

Published
2014
Full Text
View/download PDF

37. Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation.

Author

Dion, C., Desjardins, P., Schiettekatte, F., Chicoine, M., Robertson, M. D., Shtinkov, N., Poole, P. J., Wu, X., and Raymond, S.

Subjects
QUANTUM dots, ION implantation, PHOTOLUMINESCENCE, SPECTRUM analysis, SCANNING transmission electron microscopy, QUANTUM wells
Abstract

We have investigated the influence of defects emanating from phosphorus implantation damage in the InP capping layer on postgrowth thermally induced intermixing in self-assembled InAs/InP(001) quantum dots (QDs). Photoluminescence (PL) spectra from as-grown samples could be described as the superposition of separate PL peaks where each peak corresponded to emission from an ensemble of QDs with a particular height ranging from 4 to 13 ML. Blueshift of up to 270 meV and significant bandwidth broadening were observed in the PL spectra after ion implantation with a fluence of 5×1011-1014 cm-2 and subsequent annealing at temperatures ranging from 450 to 600 °C. From the analysis of the evolution of the QD peaks upon intermixing, which revealed the coexistence of intact QD PL and a broad PL feature related to heavily intermixed QDs, it was suggested that the bandwidth broadening resulted from spatial inhomogeneity in the compositional intermixing. In order to better understand the mechanism responsible for the ion-implantation-induced intermixing, samples capped with a stack of compressively strained In0.75Ga0.25As/InP quantum wells (QWs) were prepared to trap vacancies released by the implantation damage while not inhibiting the effect of the interstitials. Both blueshift and bandwidth broadening were suppressed in samples containing the strained InGaAs QWs, whereas the evolution of the PL spectra from the QDs behaves as expected for interstitial-mediated intermixing. The vacancies were thus believed to be trapped in the QWs and indicated that intermixing in ion-implanted InP capped samples is mediated by vacancies. The shape of the QDs changed from a truncated pyramid in the as-grown state to a double convex lens structure after intermixing as confirmed by cross-sectional scanning transmission electron microscopy imaging. Furthermore, the change in shape and compositional intermixing of the QDs were attributed to vacancy trapping in the vicinity of the QDs as based on atomistic strain calculations. [ABSTRACT FROM AUTHOR]

Published
2008
Full Text
View/download PDF

38. Nanocavities in He implanted InP.

Author

Chicoine, M., Roorda, S., Masut, R. A., and Desjardins, P.

Subjects
*INDIUM compounds, *ION implantation, *X-ray diffraction, *TRANSMISSION electron microscopy
Abstract

The formation of nanocavities in InP(001) by room-temperature He implantation and subsequent thermal annealing was studied using a combination of high-resolution x-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (XTEM) analyses. The nanocavities size and depth distributions were measured as a function of He ion dose [lowercase_phi_synonym][sub He] (1×10[sup 16] to 9×10[sup 16] cm[sup -2]) and ion energy E (25 to 70 keV), as well as annealing temperature T[sub a] (600 to 750 °C) and time t[sub a] (5 to 25 min). HRXRD scans from annealed samples indicate an expansion of the InP lattice, contrary to what is usually observed following heavy-ion implantation. The critical [lowercase_phi_synonym][sub He] and T[sub a] values for the formation of nanocavities were found by XTEM analysis to be between 1 and 2×10[sup 16] cm[sup -2] and between 600 and 620 °C, respectively. Cavities of diameter 4–50 nm with {110}, {101}, and {001} facets were obtained. Increasing T[sub a] and t[sub a] resulted in larger cavities and increasing [lowercase_phi_synonym][sub He] produced a larger number of cavities. Furthermore we find that nanocavities are metastable as their size first increases with annealing temperature and time but then decreases until they disappear for t[sub a]>25 min at T[sub a]=640 °C or t[sub a]>10 min at T[sub a]=750 °C. Results are compared with similar work carried out on He-implanted silicon and differences between the two materials are explained in terms of defect diffusivity and surface energy, higher diffusivity enhancing cavity collapse and lower surface energy enhancing cavity growth. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2003
Full Text
View/download PDF

42. MeV Fe ion implantation of InGaAsP/InP heterostructures for terahertz time-domain spectroscopy applications

Author

Bernier, Maxime, Fekecs, Andre, Morris, Denis, Schiettekatte, F., Chicoine, M., Ares, Richard, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Regroupement Québécois sur les Matériaux de Pointe (RQMP), École Polytechnique de Montréal (EPM)-Université de Sherbrooke (UdeS)-McGill University = Université McGill [Montréal, Canada]-Université de Montréal (UdeM)-Fonds Québécois de Recherche sur la Nature et les Technologies (FQRNT), Université de Sherbrooke (UdeS), and Bernier, Maxime

Subjects
[SPI]Engineering Sciences [physics], [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI] Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2010

43. Ultrafast InGaAsP for a portable terahertz time domain spectroscopy system

Author

Bernier, Maxime, Fekecs, Andre, Chicoine, M., Schiettekatte, F., Charette, Paul, Ares, Richard, Taillon, Yve, Houde, Daniel, Morris, Denis, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Regroupement Québécois sur les Matériaux de Pointe (RQMP), École Polytechnique de Montréal (EPM)-Université de Sherbrooke (UdeS)-McGill University = Université McGill [Montréal, Canada]-Université de Montréal (UdeM)-Fonds Québécois de Recherche sur la Nature et les Technologies (FQRNT), Université de Sherbrooke (UdeS), Laboratoire de Spectroscopie Optique Ultrarapide (Sherbrooke), and Bernier, Maxime

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2010

45. BI-19 * PSEUDOPROGRESSION IN OLIGODENDROGLIOMAS AND MIXED OLIGOASTROCYTOMAS IS ASSOCIATED WITH POOR PROGNOSIS

Author

Lin, A., primary, Liu, J., additional, Huang, J., additional, Robinson, C., additional, Simpson, J., additional, Chicoine, M., additional, Dacey, R., additional, Kim, A., additional, Rich, K., additional, Leuthardt, E., additional, Linette, G., additional, Miller-Thomas, M., additional, Schmidt, R., additional, Dahiya, S., additional, and Tran, D., additional

Published
2014
Full Text
View/download PDF

47. Lifetime of $^{19}$Ne*(4.03 MeV)

Author

Kanungo, R., Alexander, T. K., Andreyev, A. N., Ball, G. C., Chakrawarthy, R. S., Chicoine, M., Churchman, R., Davids, B., Forster, J. S., Gujrathi, S., Hackman, G., Howell, D., Leslie, J. R., Morton, A. C., Mythili, S., Pearson, C. J., Ressler, J. J., Ruiz, C., Savajols, H., Schumaker, M. A., Tanihata, I., Walden, P., Yen, S., Grand Accélérateur National d'Ions Lourds (GANIL), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)

Subjects
26.30.+k, 25.55.Hp, 27.20.+n, [PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex], Nuclear Experiment
Abstract

The Doppler-shift attenuation method was applied to measure the lifetime of the 4.03 MeV state in 19Ne. Utilizing a 3He-implanted Au foil as a target, the state was populated using the 20Ne(3He,alpha)19Ne reaction in inverse kinematics at a 20Ne beam energy of 34 MeV. De-excitation gamma rays were detected in coincidence with alpha particles. At the 1 sigma level, the lifetime was determined to be 11 +4, -3 fs and at the 95.45% confidence level the lifetime is 11 +8, -7 fs., Comment: 6 pages, submitted to Phys. Rev. C

Published
2006

49. MEDICAL RADIATION THERAPIES

Author

Ahmed, I., primary, Biswas, A., additional, Krishnamurthy, S., additional, Julka, P., additional, Rath, G., additional, Back, M., additional, Huang, D., additional, Gzell, C., additional, Chen, J., additional, Kastelan, M., additional, Gaur, P., additional, Wheeler, H., additional, Badiyan, S. N., additional, Robinson, C. G., additional, Simpson, J. R., additional, Tran, D. D., additional, Rich, K. M., additional, Dowling, J. L., additional, Chicoine, M. R., additional, Leuthardt, E. C., additional, Kim, A. H., additional, Huang, J., additional, Michaelsen, S. R., additional, Christensen, I. J., additional, Grunnet, K., additional, Stockhausen, M.-T., additional, Broholm, H., additional, Kosteljanetz, M., additional, Poulsen, H. S., additional, Tieu, M., additional, Lovblom, E., additional, Macnamara, M., additional, Mason, W., additional, Rodin, D., additional, Tai, E., additional, Ubhi, K., additional, Laperriere, N., additional, Millar, B.-A., additional, Menard, C., additional, Perkins, B., additional, Chung, C., additional, Clarke, J., additional, Molinaro, A., additional, Phillips, J., additional, Butowski, N., additional, Chang, S., additional, Perry, A., additional, Costello, J., additional, DeSilva, A., additional, Rabbitt, J., additional, Prados, M., additional, Cohen, A. L., additional, Anker, C., additional, Shrieve, D., additional, Hall, B., additional, Salzman, K., additional, Jensen, R., additional, Colman, H., additional, Farber, O., additional, Weinberg, U., additional, Palti, Y., additional, Fisher, B., additional, Chen, H., additional, Macdonald, D., additional, Lesser, G., additional, Coons, S., additional, Brachman, D., additional, Ryu, S., additional, Werner-Wasik, M., additional, Bahary, J.-P., additional, Chakravarti, A., additional, Mehta, M., additional, Gupta, T., additional, Nair, V., additional, Epari, S., additional, Godasastri, J., additional, Moiyadi, A., additional, Shetty, P., additional, Juvekar, S., additional, Jalali, R., additional, Herrlinger, U., additional, Schafer, N., additional, Steinbach, J., additional, Weyerbrock, A., additional, Hau, P., additional, Goldbrunner, R., additional, Kohnen, R., additional, Urbach, H., additional, Stummer, W., additional, Glas, M., additional, Houillier, C., additional, Ghesquieres, H., additional, Chabrot, C., additional, Soussain, C., additional, Ahle, G., additional, Choquet, S., additional, Faurie, P., additional, Bay, J.-O., additional, Vargaftig, J., additional, Gaultier, C., additional, Nicolas-Virelizier, E., additional, Hoang-Xuan, K., additional, Iskanderani, O., additional, Izar, F., additional, Benouaich-Amiel, A., additional, Filleron, T., additional, Moyal, E., additional, Iweha, C., additional, Jain, S., additional, Melian, E., additional, Sethi, A., additional, Albain, K., additional, Shafer, D., additional, Emami, B., additional, Kong, X.-T., additional, Green, S., additional, Filka, E., additional, Green, R., additional, Yong, W., additional, Nghiemphu, P., additional, Cloughesy, T., additional, Lai, A., additional, Mallick, S., additional, Roy, S., additional, Purkait, S., additional, Gupta, S., additional, Julka, P. K., additional, Rath, G. K., additional, Marosi, C., additional, Thaler, J., additional, Ay, C., additional, Kaider, A., additional, Reitter, E.-M., additional, Haselbock, J., additional, Preusser, M., additional, Flechl, B., additional, Zielinski, C., additional, Pabinger, I., additional, Miyatake, S.-I., additional, Furuse, M., additional, Miyata, T., additional, Yoritsune, E., additional, Kawabata, S., additional, Kuroiwa, T., additional, Muragaki, Y., additional, Maruyama, T., additional, Iseki, H., additional, Akimoto, J., additional, Ikuta, S., additional, Nitta, M., additional, Maebayashi, K., additional, Saito, T., additional, Okada, Y., additional, Kaneko, S., additional, Matsumura, A., additional, Karasawa, K., additional, Nakazato, Y., additional, Kayama, T., additional, Nabors, L. B., additional, Fink, K. L., additional, Mikkelsen, T., additional, Grujicic, D., additional, Tarnawski, R., additional, Nam, D.-H., additional, Mazurkiewicz, M., additional, Salacz, M., additional, Ashby, L., additional, Thurzo, L., additional, Zagonel, V., additional, Depenni, R., additional, Perry, J. R., additional, Henslee-Downey, J., additional, Picard, M., additional, Reardon, D. A., additional, Nambudiri, N., additional, Nayak, L., additional, LaFrankie, D., additional, Wen, P., additional, Ney, D., additional, Carlson, J., additional, Damek, D., additional, Blatchford, P., additional, Gaspar, L., additional, Kavanagh, B., additional, Waziri, A., additional, Lillehei, K., additional, Reddy, K., additional, Chen, C., additional, Rashed, I., additional, Barton, K., additional, Anderson, D., additional, Prabhu, V., additional, Rusch, R., additional, Belongia, M., additional, Maheshwari, M., additional, Firat, S., additional, Schiff, D., additional, Desjardins, A., additional, Glantz, M., additional, Chamberlain, M., additional, Shapiro, W., additional, Gopal, S., additional, Judy, K., additional, Patel, S., additional, Mahapatra, A., additional, Shan, J., additional, Gupta, D., additional, Shih, K., additional, Bacha, J. A., additional, Brown, D., additional, Garner, W. J., additional, Steino, A., additional, Schwart, R., additional, Kanekal, S., additional, Li, M., additional, Lopez, L., additional, Burris, H. A., additional, Soderberg-Naucler, C., additional, Rahbar, A., additional, Stragliotto, G., additional, Song, A. J., additional, Kumar, A. M. S., additional, Murphy, E. S., additional, Tekautz, T., additional, Suh, J. H., additional, Recinos, V., additional, Chao, S. T., additional, Spoor, J., additional, Korami, K., additional, Kloezeman, J., additional, Balvers, R., additional, Dirven, C., additional, Lamfers, M., additional, Leenstra, S., additional, Sumrall, A., additional, Haggstrom, D., additional, Crimaldi, A., additional, Symanowski, J., additional, Giglio, P., additional, Asher, A., additional, Burri, S., additional, Sunkersett, G., additional, Khatib, Z., additional, Prajapati, C. M., additional, Magalona, E. E., additional, Mariano, M., additional, Sih, I. M., additional, Torcuator, R., additional, Taal, W., additional, Oosterkamp, H., additional, Walenkamp, A., additional, Beerenpoot, L., additional, Hanse, M., additional, Buter, J., additional, Honkoop, A., additional, Boerman, D., additional, de Vos, F., additional, Jansen, R., additional, van der Berkmortel, F., additional, Brandsma, D., additional, Enting, R., additional, Kros, J., additional, Bromberg, J., additional, van Heuvel, I., additional, Smits, M., additional, van der Holt, R., additional, Vernhout, R., additional, van den Bent, M., additional, Wick, W., additional, Suarez, C., additional, Rodon, J., additional, Forsyth, P., additional, Gueorguieva, I., additional, Cleverly, A., additional, Burkholder, T., additional, Desaiah, D., additional, Lahn, M., additional, Zach, L., additional, Guez, D., additional, Last, D., additional, Daniels, D., additional, Nissim, O., additional, Grober, Y., additional, Hoffmann, C., additional, Nass, D., additional, Talianski, A., additional, Spiegelmann, R., additional, Cohen, Z., additional, and Mardor, Y., additional

Published
2013
Full Text
View/download PDF

50. CLIN-RADIOLOGY

Author

Choi, Y. J., primary, Gabikian, P., additional, Zhu, F., additional, Appelbaum, D. E., additional, Wollmann, R. L., additional, Lukas, R. V., additional, Xu, L. W., additional, Thomas, R. P., additional, Lober, R. M., additional, Nagpal, S., additional, Li, G., additional, Megyesi, J. F., additional, Macdonald, D., additional, Chaudhary, N., additional, Berghoff, A. S., additional, Spanberger, T., additional, Magerle, M., additional, Dinhof, C., additional, Woehrer, A., additional, Hackl, M., additional, Birner, P., additional, Widhalm, G., additional, Marosi, C., additional, Prayer, D., additional, Preusser, M., additional, Kamson, D. O., additional, Juhasz, C., additional, Buth, A., additional, Kupsky, W. J., additional, Muzik, O., additional, Robinette, N. L., additional, Barger, G. R., additional, Mittal, S., additional, Kinoshita, M., additional, Hirayama, R., additional, Chiba, Y., additional, Kagawa, N., additional, Nonaka, M., additional, Kanemura, Y., additional, Kishima, H., additional, Nakajima, S., additional, Hatazawa, J., additional, Hashimoto, N., additional, Yoshimine, T., additional, Kim, E. H., additional, Kim, S. H., additional, Nowosielski, M., additional, Hutterer, M., additional, Putzer, D., additional, Iglseder, S., additional, Seiz, M., additional, Jacobs, A. H., additional, Gobel, G., additional, Stockhammer, G., additional, Zach, L., additional, Guez, D., additional, Last, D., additional, Daniels, D., additional, Grober, Y., additional, Nissim, O., additional, Hoffman, C., additional, Nass, D., additional, Spiegelmann, R., additional, Cohen, Z. R., additional, Mardor, Y., additional, Perreault, S., additional, Zhang, G. H., additional, Hershon, L., additional, Decarie, J.-C., additional, Yeom, K., additional, Vogel, H., additional, Partap, S., additional, Carret, A.-S., additional, Fisher, P. G., additional, Colen, R. R., additional, Changlai, T., additional, Sathyan, P., additional, Gutman, D., additional, Zinn, P., additional, Kovacs, A., additional, Jolesz, F., additional, Asthagiri, A., additional, Vasquez, R., additional, Butman, J., additional, Wu, T., additional, Morgan, K., additional, Brewer, C., additional, King, K., additional, Zalewski, C., additional, Jeffrey Kim, H., additional, Lonser, R., additional, Akbari, H., additional, Da, X., additional, Macyszyn, L., additional, Verma, R., additional, Wolf, R. L., additional, Bilello, M., additional, Melhem, E. R., additional, O'Rourke, D. M., additional, Davatzikos, C., additional, Liu, X., additional, Madhankumar, A. B., additional, Miller, P. A., additional, Duck, K. A., additional, Hafenstein, S., additional, Rizk, E., additional, Sheehan, J. M., additional, Connor, J. R., additional, Yang, Q. X., additional, Fouke, S. J., additional, Weinberger, K., additional, Kelsey, M., additional, Cholleti, S., additional, Politte, D., additional, Marcus, D., additional, Boyd, A., additional, Keogh, B., additional, Benzinger, T., additional, Milchenko, M., additional, Kim, L., additional, Prior, F., additional, Kim, L. M., additional, Commean, P., additional, Chicoine, M., additional, Rich, K., additional, Jost, S., additional, Fatterpekar, G., additional, Raz, E., additional, Knopp, E., additional, Gruber, M., additional, Parker, E., additional, Golfinos, J., additional, Zagzag, D., additional, Narayana, A., additional, Johnson, G., additional, Placantonakis, D., additional, Wen, Q., additional, Essock-Burns, E., additional, Li, Y., additional, Chang, S., additional, Nelson, S. J., additional, Larson, P., additional, Chen, A., additional, Lupo, J. M., additional, Kelley, D., additional, Parvataneni, R., additional, Lamborn, K., additional, Cha, S., additional, Jalbert, L. E., additional, Elkhaled, A., additional, Phillips, J. J., additional, Williams, C., additional, Berger, M. S., additional, Chang, S. M., additional, Damek, D. M., additional, Ney, D. E., additional, Borges, M. T., additional, Colantoni, W., additional, Bert, R., additional, Huang, R., additional, Chen, C., additional, Mukundan, S., additional, Wen, P., additional, Norden, A., additional, Andre, J. B., additional, Schmiedeskamp, H., additional, Feroze, A., additional, Zaharchuk, G., additional, Straka, M., additional, Recht, L., additional, Bammer, R., additional, Rockhill, J., additional, Mrugala, M., additional, Fink, J., additional, Rostomily, R., additional, Link, J., additional, Muzi, M., additional, Eary, J., additional, Krohn, K., additional, Fisher, F. G., additional, Ellingson, B. M., additional, Pope, W. B., additional, Boxerman, J. L., additional, Harris, R. J., additional, Lai, A., additional, Nghiemphu, P. L., additional, Jeyapalan, S., additional, Safran, H., additional, Kruse, C. A., additional, Liau, L. M., additional, Cloughesy, T. F., additional, and Phillips, J., additional

Published
2012
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results