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Next-generation low-cost semiconductors such as halide perovskites exhibit optoelectronic properties dominated by nanoscale variations in their structure, composition and photophysics. While microscopy provides a proxy for ultimate device function, past works have focused on neat thin-films on insulating substrates, missing crucial information about charge extraction losses and recombination losses introduced by transport layers. Here we use a multimodal operando microscopy toolkit to measure nanoscale current-voltage curves, recombination losses and chemical composition in an array of state-of-the-art perovskite solar cells before and after extended operational stress. We apply this toolkit to the same scan areas before and after extended operation to reveal that devices with the highest performance have the lowest initial performance spatial heterogeneity - a crucial link that is missed in conventional microscopy. We find that subtle compositional engineering of the perovskite has surprising effects on local disorder and resilience to operational stress. Minimising variations in local efficiency, rather than compositional disorder, is predictive of improved performance and stability. Modulating the interfaces with different contact layers or passivation treatments can increase initial performance but can also lead to dramatic nanoscale, interface-dominated degradation even in the presence of local performance homogeneity, inducing spatially varying transport, recombination, and electrical losses. These operando measurements of full devices act as screenable diagnostic tools, uniquely unveiling the microscopic mechanistic origins of device performance losses and degradation in an array of halide perovskite devices and treatments. This information in turn reveals guidelines for future improvements to both performance and stability., Comment: Main text and supplementary information. Main text 26 pages, 4 figures. Supplementary information 79 pages, 76 figures. Kyle Frohna and Cullen Chosy contributed equally

Bandgap tunability of lead mixed-halide perovskites makes them promising candidates for various applications in optoelectronics since they exhibit sharp optical absorption onsets despite the presence of disorder from halide alloying. Here we use localization landscape theory to reveal that the static disorder due to compositional alloying for iodide:bromide perovskite contributes at most 3 meV to the Urbach energy. Our modelling reveals that the reason for this small contribution is due to the small effective masses in perovskites, resulting in a natural length scale of around 20nm for the "effective confining potential" for electrons and holes, with short range potential fluctuations smoothed out. The increase in Urbach energy across the compositional range agrees well with our optical absorption measurements. We model systems of sizes up to 80 nm in three dimensions, allowing us to explore halide segregation, accurately reproducing the experimentally observed absorption spectra and demonstrating the scope of our method to model electronic structures on large length scales. Our results suggest that we should look beyond static contribution and focus on the dynamic temperature dependent contribution to the Urbach energy., Comment: 4 figures

Tandem perovskite solar cells beckon as lower cost alternatives to conventional single junction solar cells, with all-perovskite tandem photovoltaic architectures showing power conversion efficiencies up to 26.4%. Solution-processing approaches for the perovskite layers have enabled rapid 2optimization of perovskite solar technologies, but new deposition routes are necessary to enable modularity and scalability, facilitating further efficiency improvements and technology adoption. Here, we utilise a 4-source vacuum deposition method to deposit FA$_{0.7}$ Cs$_{0.3}$Pb(I$_x$Br$_{1-x}$)$_3$ perovskite, where the bandgap is widened through fine control over the halide content. We show how the combined use of a MeO-2PACz self-assembled monolayer as hole transporting material and passivation of the perovskite absorber with ethylenediammonium diiodide reduces non-radiative losses, with this dual-interface treatment resulting in efficiencies of 17.8% in solar cells based on vacuum deposited perovskites with bandgap of 1.76 eV. By similarly passivating a narrow bandgap FA$_{0.75}$Cs$_{0.25}$Pb$_{0.5}$Sn$_{0.5}$I$_3$ perovskite and combining it with sub-cells of evaporated FA$_{0.7}$Cs$_{0.3}$Pb(I$_{0.64}$Br$_{0.36}$)$_3$, we report a 2-terminal all-perovskite tandem solar cell with champion open circuit voltage and power conversion efficiency of 2.06 V and 24.1%, respectively. The implementation of our dry deposition method enables high reproducibility in complex device architectures, opening avenues for modular, scalable multi-junction devices where the substrate choice is unrestricted., Comment: 28 pages, 5 figures

Halide perovskites excel in the pursuit of highly efficient thin film photovoltaics, with power conversion efficiencies reaching 25.5% in single junction and 29.5% in tandem halide perovskite/silicon solar cell configurations. Operational stability of perovskite solar cells remains a barrier to their commercialisation, yet a fundamental understanding of degradation processes, including the specific sites at which failure mechanisms occur, is lacking. Recently, we reported that performance-limiting deep sub-bandgap states appear in nanoscale clusters at particular grain boundaries in state-of-the-art $Cs_{0.05}FA_{0.78}MA_{0.17}Pb(I_{0.83}Br_{0.17})_{3}$ (MA=methylammonium, FA=formamidinium) perovskite films. Here, we combine multimodal microscopy to show that these very nanoscale defect clusters, which go otherwise undetected with bulk measurements, are sites at which degradation seeds. We use photoemission electron microscopy to visualise trap clusters and observe that these specific sites grow in defect density over time under illumination, leading to local reductions in performance parameters. Scanning electron diffraction measurements reveal concomitant structural changes at phase impurities associated with trap clusters, with rapid conversion to metallic lead through iodine depletion, eventually resulting in pinhole formation. By contrast, illumination in the presence of oxygen reduces defect densities and reverses performance degradation at these local clusters, where phase impurities instead convert to amorphous and electronically benign lead oxide. Our work shows that the trapping of charge carriers at sites associated with phase impurities, itself reducing performance, catalyses redox reactions that compromise device longevity. Importantly, we reveal that both performance losses and intrinsic degradation can be mitigated by eliminating these defective clusters., Comment: 23 pages, 3 figures, Stuart Macpherson and Tiarnan A. S. Doherty contributed equally

Halide perovskites perform remarkably in optoelectronic devices including tandem photovoltaics. However, this exceptional performance is striking given that perovskites exhibit deep charge carrier traps and spatial compositional and structural heterogeneity, all of which should be detrimental to performance. Here, we resolve this long-standing paradox by providing a global visualisation of the nanoscale chemical, structural and optoelectronic landscape in halide perovskite devices, made possible through the development of a new suite of correlative, multimodal microscopy measurements combining quantitative optical spectroscopic techniques and synchrotron nanoprobe measurements. We show that compositional disorder dominates the optoelectronic response, while nanoscale strain variations even of large magnitude (~1 %) have only a weak influence. Nanoscale compositional gradients drive carrier funneling onto local regions associated with low electronic disorder, drawing carrier recombination away from trap clusters associated with electronic disorder and leading to high local photoluminescence quantum efficiency. These measurements reveal a global picture of the competitive nanoscale landscape, which endows enhanced defect tolerance in devices through spatial chemical disorder that outcompetes both electronic and structural disorder., Comment: 26 pages, 4 figures

Here we use time-resolved and steady-state optical spectroscopy on state-of-the-art low- and high-bandgap perovskite films for tandems to quantify intrinsic recombination rates and absorption coefficients. We apply these data to calculate the limiting efficiency of perovskite-silicon and all-perovskite two-terminal tandems employing currently available bandgap materials as 42.0 % and 40.8 % respectively. By including luminescence coupling between sub-cells, i.e. the re-emission of photons from the high-bandgap sub-cell and their absorption in the low-bandgap sub-cell, we reveal the stringent need for current matching is relaxed when the high-bandgap sub-cell is a luminescent perovskite compared to calculations that do not consider luminescence coupling. We show luminescence coupling becomes important in all-perovskite tandems when charge carrier trapping rates are < 10$^{6}$ s$^{-1}$ (corresponding to carrier lifetimes longer than 1 ${\mu}$s at low excitation densities) in the high-bandgap sub-cell, which is lowered to 10$^{5}$ s$^{-1}$ in the better-bandgap-matched perovskite-silicon cells. We demonstrate luminescence coupling endows greater flexibility in both sub-cell thicknesses, increased tolerance to different spectral conditions and a reduction in the total thickness of light absorbing layers. To maximally exploit luminescence coupling we reveal a key design rule for luminescent perovskite-based tandems: the high-bandgap sub-cell should always have the higher short-circuit current. Importantly, this can be achieved by reducing the bandgap or increasing the thickness in the high-bandgap sub-cell with minimal reduction in efficiency, thus allowing for wider, unstable bandgap compositions (>1.7 eV) to be avoided. Finally, we experimentally visualise luminescence coupling in an all-perovskite tandem device stack through cross-section luminescence images., Comment: 20 pages, 5 figures