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Kesterite solar cells often suffer from low open‐circuit voltage due to interface recombination. To address this, a passivation approach is explored using a dielectric layer between the absorber and buffer layer, coupled with a point contact structure. In this method, carrier transport is enabled through point contacts while effectively passivating regions covered by oxide. In this study, although forming point contacts on the front surface poses processing challenges, a novel solution is presented. Herein, in situ formed ZnS nanoparticles (NPs) during Cu2ZnSn(S, Se)4 (CZTSSe) absorber fabrication is utilized as a nanomask for front surface point contacts. A thin TaOx layer, acting as the passivation layer, is deposited over the CZTSSe surface with ZnS NPs by using atomic layer deposition (ALD). The selective removal of these NPs by deionized water soaking creates size‐controlled point contacts without damaging the absorber surface. In this approach, the first successful implementation of TaOx in enhancing CZTSSe solar cell efficiency, which jumps from 6.17% to 9.02% due to this strategy, is marked. The passivation mechanism involves sodium attraction during ALD, reduced interface defects, and the generation of positive fixed oxide charges. In this innovative method, not only solar cell efficiency is improved but new insights are also provided into using secondary phases as nanomasks in interface engineering. [ABSTRACT FROM AUTHOR]

We report a catalyst family of high-entropy alloy (HEA) atomic layers having three elements from iron-group metals (IGMs) and two elements from platinum-group metals (PGMs). Ten distinct quinary compositions of IGM-PGM-HEA with precisely controlled square atomic arrangements are used to explore their impact on hydrogen evolution reaction (HER) and hydrogen oxidation reaction (HOR). The PtRuFeCoNi atomic layers perform enhanced catalytic activity and durability toward HER and HOR when benchmarked against the other IGM-PGM-HEA and commercial Pt/C catalysts. Operando synchrotron x-ray absorption spectroscopy and density functional theory simulations confirm the cocktail effect arising from the multielement composition. This effect optimizes hydrogen-adsorption free energy and contributes to the remarkable catalytic activity observed in PtRuFeCoNi. In situ electron microscopy captures the phase transformation of metastable PtRuFeCoNi during the annealing process. They transform from random atomic mixing (25°C), to ordered L1 0 (300°C) and L1 2 (400°C) intermetallic, and finally phase-separated states (500°C).

The multilayer 1T-TaSe 2 is successfully synthesized by annealing a Se-implanted Ta thin film on the SiO 2 /Si substrate. Material analyses confirm the 1T (octahedral) structure and the quasi-2D nature of the prepared TaSe 2 . Temperature-dependent resistivity reveals that the multilayer 1T-TaSe 2 obtained by our method undergoes a commensurate charge-density wave (CCDW) transition at around 500 K. This synthesis process has been applied to synthesize MoSe 2 and HfSe 2 and expanded for synthesis of one more transition-metal dichalcogenide (TMD) material. In addition, the main issue of the process, that is, the excess metal capping on the TMD layers, is solved by the reduction of thickness of the as-deposited metal thin film in this work., Competing Interests: The authors declare no competing financial interest., (Copyright © 2019 American Chemical Society.)