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Microplasmas can be used for a wide range of technological applications and to improve the understanding of fundamental physics. Scanning electron microscopy, on the other hand, provides insights into the sample morphology and chemistry of materials from the mm‐ down to the nm‐scale. Combining both would provide direct insight into plasma‐sample interactions in real‐time and at high spatial resolution. Up till now, very few attempts in this direction have been made, and significant challenges remain. This work presents a stable direct current glow discharge microplasma setup built inside a scanning electron microscope. The experimental setup is capable of real‐time in situ imaging of the sample evolution during plasma operation and it demonstrates localized sputtering and sample oxidation. Further, the experimental parameters such as varying gas mixtures, electrode polarity, and field strength are explored and experimental V–I curves under various conditions are provided. These results demonstrate the capabilities of this setup in potential investigations of plasma physics, plasma‐surface interactions, and materials science and its practical applications. The presented setup shows the potential to have several technological applications, for example, to locally modify the sample surface (e.g., local oxidation and ion implantation for nanotechnology applications) on the µm‐scale. [ABSTRACT FROM AUTHOR]

The formation of the ferroelectric domain structure as a result of irradiation by focused ion beam of [100]-cut 0.61Pb(Mg 1 ∕ 3 Nb 2 ∕ 3) O3–0.39PbTiO3 (PMN–PT) single crystals covered by surface artificial dielectric layer and with free surface was investigated. The dot irradiation resulted in formation of the wedge-like domains grown along [00 1 ̄ ] direction. For irradiation of the free surface, the domains are mainly located under the surface, while at the irradiated surface with an artificial dielectric layer the domains are located at the surface. It was shown that the subsurface wedge-shaped part of the domain is unstable and completely disappears after a month due to spontaneous backswitching under the action of the residual depolarization field. The revealed nonlinear dose dependence of the domain sizes was attributed to the distribution of the electric field using the point charge model. The domain interaction for the distance between irradiated dots below 30 μ m has been revealed in all samples. It was shown that the decrease of the distance between irradiated dots in the created domain row leads to an increase in the length of the central domains, which is explained by the contribution of all injected charges to the switching field. [ABSTRACT FROM AUTHOR]

The formation of the domain structure by electron beam irradiation in thermally depolarized Ce-doped strontium barium niobate single crystals with free surface and surface covered by a dielectric layer has been studied. The dependences of the domain sizes and domain depth on the irradiated dose have been measured. The circular shape of the isolated domains was obtained. The isotropic domain growth was attributed to step generation at the wall as a result of merging with the residual nanodomains which existed after thermal depolarization. The linear dose dependence of the switched area was attributed to the screening of the depolarization field by the injected charge. The electrostatic interaction of the approaching charged domain walls was revealed. The better quality of the domain patterns was achieved in the samples with electron localization in the dielectric layer. The obtained results can be applied for the creation of precise domain patterns with arbitrary orientation and shape to produce nonlinear optical devices with improved characteristics. [ABSTRACT FROM AUTHOR]

Because of its low hysteresis, high dielectric constant, and strong piezoelectric response, Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT) thin films have attracted considerable attention for the application in PiezoMEMS, field-effect transistors, and energy harvesting and storage devices. However, it remains a great challenge to fabricate phase-pure, pyrochlore-free PMN-PT thin films. In this study, we demonstrate that a high deposition rate, combined with a tensile mismatched template layer can stabilize the perovskite phase of PMN-PT films and prevent the nucleation of passive pyrochlore phases. We observed that an accelerated deposition rate promoted mixing of the B-site cation and facilitated relaxation of the compressively strained PMN-PT on the SrTiO 3 (STO) substrate in the initial growth layer, which apparently suppressed the initial formation of pyrochlore phases. By employing La-doped-BaSnO 3 (LBSO) as the tensile mismatched buffer layer, 750 nm thick phase-pure perovskite PMN-PT films were synthesized. The resulting PMN-PT films exhibited excellent crystalline quality close to that of the STO substrate.