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A cold cathode X-ray tube was fabricated using a carbon nanotube (CNT) field electron emitter made by a free-standing CNT film which is composed of a highly packed CNT network. A lot of CNT bundles with a sharp tip are vertically aligned at the edge of the thin CNT film with a length of 10 mm and a thickness of 7 μm. The cold cathode X-ray tube using the CNT field emitter presents an extremely high tube current density of 152 A/cm

For a more sustainable and environmental-friendly management of shale gas produced water (SGPW), it is essential to customize and optimize the treatment options since the characteristics of SGPW vary both spatially and temporally. However, fundamental studies on the foulants of SGPW and their control methods are lacking, particularly in connection with the RO-based process, which has been adopted increasingly in SGPW treatment. This study fundamentally evaluated the feasibility of novel cold-cathode X-ray irradiation as an additional fouling control process prior to the RO process using actual SGPW extracted from the Sichuan shale region (China) for the first time in literature. The foulants incapable of being removed by conventional pre-treatments (e.g., dissolved air flotation (DAF) and ultrafiltration (UF) membrane) induced organic fouling in the RO stage, and they were identified eventually as aliphatic hydrocarbon (oil) components. The fouling mechanism was deduced to be the formation of coalesced hydrocarbon layer on the RO membrane surface. In order to target these identified oily substances surgically, the novel cold-cathode X-ray irradiation process was employed since this technology offers much better energy efficiency compared to the existing thermionic X-ray irradiation. Our work demonstrated that the cold-cathode X-ray irradiation could efficiently remove the aliphatic hydrocarbon in the pre-treatment stage. This new X-ray irradiation process was optimized further with respect to energy consumption by investigating the effect of tube current and voltage. Our experimental observations suggest that the cold-cathode X-ray irradiation process could be an energy-efficient alternative for the treatment of organic-rich (oily) industrial wastewaters such as SGPW.

We report the fabrication of organic field-effect transistors (OFETs) via spray coating of electrochemically exfoliated graphene (EEG) and conducting polymer hybrid as electrodes. To reduce the roughness and sheet resistance of the EEG electrodes, subsequent coating of conducting polymer (poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)) and acid treatment was performed. After that, active channel layer was developed by spin coating of semiconducting poly(3-hexylthiophene) on the hybrid electrodes to define the bottom gate bottom contact configuration. The OFET devices with the EEG/PEDOT:PSS hybrid electrodes showed a reasonable electrical performances (field effect mobility = 0.15 cm2 V−1 s−1, on/off current ratio = 102, and threshold voltage = −1.57 V). Furthermore, the flexible OFET devices based on the Polydimethlsiloxane (PDMS) substrate and ion gel dielectric layer exhibited higher electrical performances (field effect mobility = 6.32 cm2 V−1 s−1, on/off current ratio = 103, and threshold voltage = −1.06 V) and excellent electrical stability until 1000 cycles of bending test, which means that the hybrid electrode is applicable to various organic electronic devices, such as flexible OFETs, supercapacitors, organic sensors, and actuators.

We report here scission of bamboo-shaped multi-walled carbon nanotubes (BS-MWCNTs) under ultrasonication. As the applied sonication energy increases, mean length of BS-MWCNTs decreases. When sonication energy increases over 500 J/mL, the length of BS-MWCNTs no longer decreases; the limited scission length ( L 0 ) is about 1.7 μm for BS-MWCNTs with diameter between 50 and 100 nm. From the L 0 of BS-MWCNTs, their tensile strength (σ ∗ ) is calculated and found to be smaller than that of multi-walled carbon nanotubes (MWCNTs). In addition, exponential decrease of the length of BS-MWCNTs with increasing sonication energy is observed, which is distinguished from typical power law dependence of sonication-induced scission of MWCNTs. These exclusive characteristics in the scission of BS-MWCNTs under ultrasonication are regarded to result from weak binding at discontinuous graphene sheets obtained from forming compartment structures of BS-MWCNTs during growth.

We report the synthesis of large-scale continuous MoSe2 films on SiO2/Si substrates by atmospheric pressure chemical vapor deposition (CVD). As-grown thin films were composed of a continuous monolayer of MoSe2 and extended up to a millimeter scale. The CVD-grown monolayer MoSe2 films were uniform in thickness and highly crystalline with hexagonal crystal structures. Raman and photoluminescence spectra showed that CVD-grown monolayer MoSe2 films have similar vibrational and optical properties to those of mechanically exfoliated monolayer MoSe2. These results demonstrate that the CVD-grown monolayer MoSe2 films have reasonably high quality comparable to that of mechanically exfoliated monolayer MoSe2 flakes.

Graphite nanoplatelet (GNP) paste field emitters fabricated using all-carbon-based materials, such as GNPs, graphite nanoparticles, graphite binders, and a graphite rod substrate have been demonstrated. The GNP field emitters on the graphite rod substrate showed an emission current density of 84.3 mA/cm2 and good emission stability with a degradation rate of less than 10%, indicating higher emission performance than other GNP field emitters. The enhanced field emission performance of the GNP field emitter is attributed to a low work function barrier between carbon materials, low contact resistance between GNPs and the graphite rod substrate, and good GNP paste bulk electrical conductivity. The new approach to fabricate GNP field emitters using all-carbon-based materials can be useful for various field emission devices.

We present the impedancemetric operation of ammonia gas sensors based on drop-deposited, 99% semiconductor-enriched single-walled carbon nanotube networks. Impedance spectroscopic data for these devices exhibit a complex impedance over a range of frequencies (0.5 Hz to 300 kHz) and are well fit with a proposed equivalent electrical circuit model. The effect of NH 3 on the high-frequency arc resistance is described by a linear law at all NH 3 concentrations, indicating the possibility of utilizing the impedance spectra as the main sensing signal. The impedancemetric operation mode demonstrates a sensitivity of 3.70%/ppm at 3.6–41.4 NH 3 concentration, which is equivalent to an improvement in sensitivity of 2.1 times compared to conventional direct current (dc) measurement. Furthermore, impedancemetric sensing is much less susceptible than conventional dc to noise problems in the very low frequency or dc due to ionic contamination or dissociated NH 3 molecules.

Diameters and crystallinity of multi-walled carbon nanotubes (MWCNTs) dependent on reduction temperature of the Fe&ndash, Co/MgO catalyst were investigated. MWCNTs were synthesized by catalytic chemical vapor depositing and the Fe&ndash, Co/MgO catalyst was fabricated by using a sol-gel method. According to Raman analysis, transmission electron microscopy and thermogravimetric analysis, the diameter distribution of MWCNTs was broadened with increasing reduction temperature of the Fe&ndash, Co/MgO catalyst and crystallinity was improved. The above results are attributed to an increased size and enhanced crystallinity of metal catalyst particles by increasing reduction temperature.

The high performance cold cathode x-ray source was fabricated by using the point-typed CNT field emitter. The cold cathode x-ray source consists of the CNT point emitter, the metal mesh gate electrode, the metal hole focusing lens and the tungsten target anode electrode. To fabricate x-ray source, such components were mounted in a SUS vacuum chamber. The fabricated CNT x-ray source showed a good resolution of x-ray images at a low anode current and at a low anode voltage, and also indicated stable operation. We evaluated x-ray images according to the tube voltage and the tube current, respectively.

Field emission performance of boron nitride nanotube (BNNT) fabricated by simple filtration-transfer method, were evaluated according to vacuum pressure to estimate its potential use for robust electron sources. Even though there is little change in the current density-electric field characteristics, the stability test for a relatively long time shows somewhat large degradation at a vacuum pressure of over 10−5 Torr. To investigate a key factor of the degradation, we changed the vacuum ambient from air to argon. Under argon ambient condition, the current degradation and fluctuation rates were almost the same as those measured under air ambient at a vacuum pressure of 10−5 Torr. Consequently, ion bombardment dominantly induced the current degradation of the BNNT field emitters rather than oxidation effect.

We fabricated the cold cathode x-ray source composed of point-type CNT field emitter, mesh gate electrode, e-beam focusing lens and W anode. The point-type CNT field emitter was made by CNT film with a triangular tip shape. Field emission properties measured in triode configuration showed the low turn-on and threshold electric fields, the high emission current and focused electron beam spot. The CNT field emitter based cold cathode x-ray source reveals high resolution x-ray images. We demonstrated that the point-type CNT emitter is suitable candidate for the high performance cold cathode x-ray sources.

We fabricated carbon nanotube (CNT) field emitters using a CNT film, which indicated the point-type CNT film emitter, and evaluate field emission properties of the CNT field emitter in the triode configuration. The CNT film emitters showed good emission properties such as the low turn-on field, the high emission current and emission stability. We also investigated field emission properties of the CNT film emitter by adjusting the angle of tip of the CNT film.

We report novel two-dimensional (2D) shaped carbon nanotube (CNT) field emitters using triangular-shaped CNT films and their field emission properties. Using the 2D shaped CNT field emitters, we achieved remarkable field emission performance with a high emission current of 22 mA (equivalent to an emission current density >105 A/cm2) and long-term emission stability at 1 mA for 20 h. We also discuss the field emission behavior of the 2D shaped CNT field emitter in detail.

A multiwalled carbon nanotube (MWNT) was physically cured with oxygen plasma treatment, and the as-prepared oxygenated MWNT (OMWNT) was incorporated into TiO2 nanopowders to prepare a spray-coatable OMWNT–TiO2 composite suspension. The composite layer was directly formed on a fluorinated tin oxide surface by spray coating and served as a photoanode of a photoelectrochemical cell (PEC). The cell performance was optimized in terms of the plasma treatment time and compared with a conventional PEC, showing 37% increased energy conversion efficiency. The efficiency improvement confirmed by the electrochemical impedance spectra was related to the reduced charge-transfer resistance and efficient electron transport through the OMWNT network.

We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (Hc) of 188 Oe and a remanent magnetization of 102 emu cm−3 at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm2 V−1 s−1 at room temperature.

A large-scale synthesis of water-assisted single-walled carbon nanotubes (SWCNTs) was investigated over Fe–Mo/MgO catalysts by catalytic chemical vapor deposition of ethylene. Introduction of water vapor into a reactor induced super-bundle SWCNTs (SB-SWCNTs) and dramatically improved the product yield of SWCNTs from 40 to 206 wt%. By adding water vapor, the average diameter of the SB-SWCNTs was increased from 1.5 to 3.0 nm and distribution of the diameter became wider. The Raman peak intensity ratio (IG/ID) of the SWCNTs, which indicates the crystallinity and defect degree of SWCNTs, showed an almost constant value of 8 regardless of water vapor concentration. The possible growth mechanism of SB-SWCNTs was discussed.

We demonstrated the generation of a bandgap in the bilayer graphene synthesized by plasma-enhanced chemical vapor deposition. By adjusting the growth time, the defect density and nano-crystallite size of bilayer graphene were easily controlled, affecting the bandgap of bilayer graphene and the field effect mobility of bilayer graphene field effect transistor (FET). The defect density increased with increasing growth time, whereas the nano-crystallite size decreased. The semiconducting behavior of bilayer graphene was observed by measuring the temperature-dependent conductivity. Defects generated by plasma radiation induce broken symmetry in graphene, thus opening a bandgap. The bandgap energies in the bilayer graphene are 90, 156, and 187 meV for growth times of 5, 10, and 30 min, respectively. The back-gate bilayer graphene FET presented the p-type semiconducting behavior and the field effect mobility of approximately 1000 cm 2 V −1 s −1 when the bandgap energy was 156 meV.

The cold cathode x-ray source was fabricated by using the point-type CNT film emitter. The CNT x-ray source consists of the CNT point emitter, the metal mesh gate electrode and the tungsten target anode electrode. Those components were mounted in a small vacuum chamber. The fabricated CNT x-ray source shows a high resolution x-ray image at a low anode current and at a low anode voltage compared to conventional thermionic x-ray sources. The achieved high performance of the cold cathode x-ray source is caused by high density electron beam emitted from the point-type CNT film emitter. Our results indicated that the point-type CNT film emitter is very useful for the CNT based cold cathode x-ray sources.

We reported fabrication and field emission properties of carbon nanotube (CNT) field emitters which indicated the point-type CNT film emitter and line-type CNT film emitter. The CNT film field emitters were made by cutting CNT film using a razor. The CNT film emitters showed good emission properties such as the low turn-on field, the high emission current in a triode configuration. Especially, the line-type CNT film emitter was effective to realize an electron sheet beam with high density.

We fabricated the point-type CNT emitter for cold cathode x-ray source applications. The CNT point emitter was made by CNT film with a triangular tip shape, which was clamped using two stainless steel plates. Electrical properties of the point-type CNT emitter measured in triode structure showed the low turn-on and threshold electric fields, the high emission current and relatively high electron transmittance. The x-ray sources made by the point-type CNT film emitter indicated good performance, which reveals high resolution x-ray images at a low anode current and at a low anode voltage. Our results indicated that the point-type CNT emitter is very useful for the high performance cold cathode x-ray sources.

We combined magneto-infrared spectroscopy and first-principles calculations to unravel the role of spin-phonon coupling in the vicinity of the magnetic field-driven phase transitions in two chemically similar $S=1/2$ Heisenberg antiferromagnets, ${\mathrm{CuF}}_{2}({\mathrm{H}}_{2}\mathrm{O}){}_{2}$(3-Clpy) and $[\mathrm{Cu}{(\mathrm{pyz})}_{2}({\mathrm{HF}}_{2})]{\mathrm{PF}}_{6}$. This comparison resolves questions about the conditions under which the lattice participates in magnetic-field-driven transitions and, at the same time, provides a way to predict how the lattice is likely to support microscopic spin rearrangements.

Carbon nanotube (CNT) paste emitters were fabricated using graphite nanopowder filler. The CNT paste emitters consist of CNTs as the emitting material, graphite nanopowder as the filler and a graphite rod as the cathode. Rather than metal or inorganic materials, graphite nanopowder was adapted as a filler material to make the CNT paste emitters. After fabricating the emitters, sandpaper treatment was applied to increase the density of emission sites. The CNT paste emitters showed a high field emission performance, for example a high emission current of 8.5 mA from a cylindrical emitter with a diameter of 0.7 mm (corresponding to a current density of 2.2 A cm−2) and an extremely stable emission current at 1 mA (260 mA cm−2 for 20 h). Interestingly, after a number of electrical arcing events, the emitters still showed a high emission current of 5–8 mA (higher than 1 A cm−2). In addition to the sound electrical and thermal properties of the graphite filler, effective mechanical adhesion of the CNTs onto the graphite cathode induced by the use of the graphite nanopowder filler contributed the excellent field emission properties of the CNT paste emitters.

A ferromagnetic ordering with a Curie temperature of 50 K of fifteen layer of InGaMnAs/GaAs multi quantum wells (MQWs) structure grown on high resistivity (100) p-type GaAs substrates by molecular beam epitaxy (MBE) was found. It is likely that the ferromagnetic exchange coupling of sample with Curie temperature of 50 K is hole-mediated resulting in Mn substituting In or Ga sites. Temperature and excitation power dependent PL emission spectra of InGaMnAs MQWs sample grown at temperature of 170 °C show that an activation energy of Mn ion on the first quantum confinement level in InGaAs quantum well is 36 meV and impurity Mn is partly ionized. It is found that the activation energy of 36 meV of Mn ion in the QW is lower than the activation energy of 110 meV for a substitutional Mn impurity in GaAs. These measurements provide strong evidence that an impurity band existing in the bandgap due to substitutional Mn ions and it is the location of the Fermi level within the impurity band that determines Curie temperature.

A filtration-taping method was demonstrated to fabricate carbon nanotube (CNT) emitters. This method shows many good features, including high mechanical adhesion, good electrical contact, low temperature, organic-free, low cost, large size, and suitability for various CNT materials and substrates. These good features promise an advanced field emission performance with a turn-on field of 0.88 V/mm at a current density of 0.1 mA/cm 2 , a threshold field of 1.98 V/mm at a current density of 1 mA/cm 2 , and a good stability of over 20 h. The filtration-taping technique is an effective way to realize low-cost, large-size, and high-performance CNT emitters. Key words: field emission properties, carbon nanotube, filtration-taping method 1. Introduction Due to their unique geometry and physical properties, carbon nanotubes (CNTs) are currently being investigated as next-generation field emitter materials for cold cathodes. Numerous papers can be found on field emission applications such as field emission displays, lamps, X-ray sources, high-resolution electron-beam instruments, and microwave amplifiers [1-5]. Up to now, various techniques have been developed for fabricating CNT field emitters using as-grown, spraying, electrophoresis, screen-printing, and attaching individual CNTs on tungsten probe methods, etc. [6-10]. However, these techniques suffer from weak me-chanical adhesion between CNT emitters and the cathode, or severe degradation of CNT emitters due to the organic binders used in the process, which lead to a short lifetime. There-fore, an efficient and organic binder-free technique for fabricating CNT emitters is still a great challenge. In this letter, we demonstrate an advanced organic-free technique named the filtration-taping method. The filtration-taping method is suitable to fabricate simple, large, and cost-effective CNT emitters that can ensure a high mechanical adhesion, good electri-cal contact, and damage-free CNT tips, resulting in enhanced field emission properties and excellent stability.

Molybdenum disulfide (MoS2) is an extremely intriguing material because of its unique electrical and optical properties. The preparation of large-area and high-quality MoS2 nanosheets is an important step in a wide range of applications. This study demonstrates that monolayer and few-layer MoS2 nanosheets can be obtained from electrochemical exfoliation of bulk MoS2 crystals. The lateral size of the exfoliated MoS2 nanosheets is in the 5-50 μm range, which is much larger than that of chemically or liquid-phase exfoliated MoS2 nanosheets. The MoS2 nanosheets undergo low levels of oxidation during electrochemical exfoliation. In addition, microscopic and spectroscopic characterizations indicate that the exfoliated MoS2 nanosheets are of high quality and have an intrinsic structure. A back-gate field-effect transistor was fabricated using an exfoliated monolayer MoS2 nanosheet. The on/off current ratio is over 10(6), and the field-effect mobility is approximately 1.2 cm(2) V(-1) s(-1); these values are comparable to the results for micromechanically exfoliated MoS2 nanosheets. The electrochemical exfoliation method is simple and scalable, and it can be applied to exfoliate other transition metal dichalcogenides.

The p-type InP:Be/Mn/InMnP:Be triple epilayers were prepared using MBE to increase T c (>300 K) by preventing MnO 2 . After milling 1–3 nm of epilayers thickness from the top surface, the transmission electron microscopy (TEM) and X-ray diffraction (XRD) revealed no MnO 2 and precipitates, and TEM and XRD results coincide with results of ferromagnetism. The enhanced ferromagnetic transition at >300 K corresponds to InMnP:Be. The increased ferromagnetic coupling without MnO 2 is considered to originate from the increased p–d hybridation. These results demonstrate that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be formed by above process.

This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS 2 semiconducting nanosheets. During the exfoliation process, anionic SO 4 2− and OH − ions intercalate into a bulk MoS 2 and they form gaseous SO 2 or O 2 gas bubbles which produce a separating force for MoS 2 nanosheets exfoliation. Monolayer or few layers of MoS 2 nanosheets were obtained on a SiO 2 /Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS 2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 10 3 , the field-effect mobility on SiO 2 gate dielectrics was 2 cm 2 /(V s).

Boron nitride nanotubes (BNNTs) have attracted considerable attention as a field emission material because of their high mechanical strength, high negative electron affinity, and high oxidation resistance. Nevertheless, the obtained field-emission properties of BNNTs have indicated poor emission performance, which is a very high turn-on electric field with a low emission current. We fabricated BNNT field emitters and investigated their field-emission properties. The field-emission properties of the BNNT field emitters were considerably enhanced compared to those of other BN nanomaterial-based field emitters. The turn-on and the threshold electric fields of the BNNT field emitter were 3.1 and 5.4 V/μm at the gap distance of 750 μm, respectively. Both the turn-on and the threshold electric fields of the BNNT field emitters were decreased by increasing the gap distance between the emitter tip and the anode electrode. Degradation of the emission current during field emission operation for 20 h showed no significant difference according to the gap distance. Emission current fluctuation of the BNNT field emitters showed that the smaller gap was more unstable than the larger gap. The enhanced emission properties are mainly attributed to the small diameter, high-quality, and straight structure of BNNTs as well as the stable network formation of the BNNT film with good mechanical and electrical contact between the BNNTs and the cathode electrode. The remarkable emission performance of the BNNT field emitters might have promising applications for various field-emission devices.

We prepared LiMn 2 O 4 nanoparticle-decorated multiwalled carbon nanotube (MWCNT) films as a cathode electrode for lithium-ion batteries using a spray-deposition method. The surface morphologies and structures of the films were characterized using scanning electron microscopy and X-ray diffraction analysis. The results revealed that fairly homogeneous spinel LiMn 2 O 4 nanopowder-based films with the grain size of 20–50 nm were successfully formed on the surface of the MWCNTs. Cyclic voltammetry confirmed the presence of typical spinel LiMn 2 O 4 structure on the MWCNTs with showing stronger oxidative peaks of better reversibility as compared to a pure LiMn 2 O 4 electrode. The spray-deposited LiMn 2 O 4 -decorated MWCNT film was also found to have a higher discharge capacity (97.2 mAh/g) than the as-deposited LiMn 2 O 4 film (75.2 mAh/g) as well as excellent cycling stability. These characteristics are due to the fact that MWCNTs provide the cathode with multiple electron tunneling pathways and a mechanically strong framework.

We investigated the dependence of localized surface plasmon resonance (LSPR) coupled photoluminescence (PL) emission on the density of a metallic single-walled carbon nanotube (m-SWCNT). The m-SWCNTs of various densities were deposited on top of ZnO films by spin coating and filtration transfer method to form the hybrid structures. We observed PL enhancement from ZnO films deposited with spin coated m-SWCNT, comparing with pure ZnO film. The m-SWCNT acts as absorbers for the light emitted due to SPR. After resonant excitation, hot electrons in m-SWCNT are created in high energy states, which can then transfer from the m-SWCNT to the conduction band of the ZnO films. We discuss the relationship between the hot electron flow generated by internal photoemission and LSPR.

We report for the first time synthesis of high-density arrays of vertically well-aligned cobalt monosilicide (CoSi) nanowires (NWs) in a large area via a solid-state reaction. The vertical arrays of 1-μm-long Si NWs were first grown on a p-type (1 0 0) Si substrate by the aqueous electroless etching (AEE) method, and a 40-nm-thick Co layer was conformally deposited using a thermal atomic layer deposition system as revealed by SEM and transmission electron microscope analyses. The rapid thermal annealing process was carried out at various temperatures ranging from 700 to 1000 °C; the X-ray diffraction analysis confirmed that the polycrystalline CoSi NW arrays were formed at temperatures above 900 °C. The required high driving force for this silicide formation can be attributed to the significant amounts of oxygen-related contaminants at the defect sites of the highly rough surfaces of AEE-grown Si NWs. To demonstrate practical applications, field emitters and Schottky diodes were fabricated using the vertically aligned CoSi NW arrays. The field emission measurements showed a turn-on field of 10.9 V/μm and a field enhancement factor of 328, indicating the feasibility of vertically aligned CoSi NW arrays as promising field emitters. For the Schottky diodes, the measured Schottky barrier height was 0.52 eV and the estimated ideality factor obtained from the I-V characteristic curves was 2.28.

Single-walled carbon nanotubes (SWCNTs) and double-walled carbon nanotubes (DWCNTs) synthesized by a catalytic chemical vapor deposition method showed partially incorporated metal catalysts inside the graphene walls. In order to remove the metal catalysts, acid and thermal treatments were successively carried out. The methods for effective catalyst removal in SWCNTs and DWCNTs were examined by means of thermogravimetric analysis, electron microscopy, and electron paramagnetic resonance. The DWCNTs showed distinctly different metal catalyst removal behavior from that of SWCNTs due to the double-wall structure. The acid treatment is less efficient for catalyst removal from DWCNTs, while catalysts in SWCNTs are effectively removed by acid treatment. Additional thermal treatment is quite effective to remove metal catalysts from DWCNTs.

The electrocatalytic and biointerfacial properties of acid- and O2-plasma-treated single-walled carbon nanotube (SWCNT) electrodes were investigated. The SWCNT-modified electrodes were characterized using scanning electron microscopy and X-ray photoelectron spectroscopy. The electrochemical performance of these electrodes was analyzed by cyclic voltammetry and chronoamperometry. Glucose oxidase was covalently immobilized on the surface of the treated SWCNTs, and the analytical characteristics of the integrated glucose sensor were investigated using glucose as a target analyte. The plasma-activated SWCNT electrode exhibited a much higher sensitivity to the glucose and a lower detection limit than the acid-treated electrode, indicating that a larger amount of enzyme was immobilized on the plasma-treated SWCNT electrode than on the acid-treated electrode. This is due to the fact that the oxygenated functional groups are mainly located at the ends of the tubes in the acid-treated SWCNTs, while the plasma-treated SWCNTs have an even larger surface area available for enzyme immobilization owing to the functional groups covering the entire surface of the SWCNTs.