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Mitogen‐Activated Protein Kinase Kinase Kinase 1 (MAP3K1) is overexpressed in gliomas; however, its clinical significance, biological functions, and underlying molecular mechanisms remain unclear. Abnormal overexpression of MAP3K1 in glioma is strongly associated with unfavourable clinicopathological characteristics and disease progression. MAP3K1 could potentially serve as a reliable diagnostic and prognostic biomarker for glioma. MAP3K1 silencing suppressed the migration but had no effect on the proliferation and cell death of Glioblastoma Multiforme (GBM) cells. MAP3K1 knockdown exacerbated the temozolomide (TMZ) induced inhibition of glioma cell proliferation and death of GBM cells. In addition, MAP3K1 knockdown combined with TMZ treatment significantly inhibited the growth and increased cell death in organoids derived from GBM patients. MAP3K1 knockdown reversed TMZ resistance of GBM in intracranial glioma model. In terms of molecular mechanisms, the phosphorylation level of ERK was significantly decreased by MAP3K1 silencing. No significant change in the JNK pathway was found in MAP3K1‐silenced GBM cells. Inhibition of ERK phosphorylation suppressed the migration and enhanced the TMZ sensibility of GBM cells. MAP3K1 was correlated with the immune infiltration in glioma. MAP3K1 could facilitate the migration and TMZ resistance of GBM cells through MEK/ERK signalling. [ABSTRACT FROM AUTHOR]

The generation of radiological results from image data represents a pivotal aspect of medical image analysis. The latest iteration of ChatGPT-4, a large multimodal model that integrates both text and image inputs, including dermatoscopy images, histology images, and X-ray images, has attracted considerable attention in the field of radiology. To further investigate the performance of ChatGPT-4 in medical image recognition, we examined the ability of ChatGPT-4 to recognize credible osteosarcoma X-ray images. The results demonstrated that ChatGPT-4 can more accurately diagnose bone with or without significant space-occupying lesions but has a limited ability to differentiate between malignant lesions in bone compared to adjacent normal tissue. Thus far, the current capabilities of ChatGPT-4 are insufficient to make a reliable imaging diagnosis of osteosarcoma. Therefore, users should be aware of the limitations of this technology. [ABSTRACT FROM AUTHOR]

Two‐dimensional magnetic semiconductors provide a fascinating platform for studying magneto‐optoelectronic properties at the atomically thin limit and have potential in developing novel devices. In this paper, the superior negative photoconductivity (NPC) characteristics of graphene‐CrI3‐graphene van der Waals heterostructure in light detection, such as a broader detection range (650–1250 nm) and faster response time (<0.32 ms), as well as light helicity and polarization sensitivity are reported. Under near‐infrared (NIR) light illumination, the NPC‐related photoresponsivity R and specific detectivity D* are 1.18 A W−1 and 1.26 × 109 Jones, respectively. Under magnetic field conditions, the NPC and positive photoconductivity (PPC) show opposite optical helicity dependence. The photoresponsivity helicity of the NPC‐dominated photocurrent can reach 16.01%. Besides, NPC and PPC show obvious and similar linear polarization dependence, independent of magnetic fields. It is demonstrated that NPC is superior to PPC in some aspects, such as fast detection of red and NIR lights as well as their helicity and polarization, especially in the NIR region. This work explores many unique phenomena of NPC, further revealing the interplay between magnetic and optoelectronic properties in CrI3, and paves the way for expanding traditional photoelectric detection and optical communication with higher data transmission rates. [ABSTRACT FROM AUTHOR]

2D MoTe2 is regarded as a favorable candidate for semiconductor nanoelectronics integration. Chemical‐vapor‐deposition‐grown MoTe2 usually presents p‐type characteristics. In order to realize basic electronic units like complementary metal‐oxide‐semiconductor (CMOS) inverter, controllable fabrication of p‐ and n‐type transistors at large scale is of vital importance. Here, large‐scale MoTe2 n‐channel field‐effect transistor (n‐FET) arrays are successfully fabricated with seamless coplanar metallic 1T′‐WTe2 contacts to reduce contact resistance. High‐k HfO2 serves as a gate dielectric and its atomic‐layer‐deposition (ALD) process causes an n‐doping effect on the 2H‐MoTe2 channel. The FETs perform typical n‐type characteristics with average electron density and on/off ratio of ≈1.7 × 1013 cm−2 and 2.1 × 104, respectively. Furthermore, large‐scale homogeneous CMOS inverter arrays are fabricated, showing clear logic swing with low power consumption (≈0.4 nW) and high device yield (≈92%). Notably, their voltage transfer characteristics exhibit small hysteresis, and they work well after being kept in air for 16 months, indicating high device stability. The statistical results show that both the n‐FETs and CMOS inverters have high uniformity and reliability in performance. Significantly, this fabrication method is free from transfer processes and compatible with traditional silicon technology. This work paves the way for the application of few‐layer MoTe2 in semiconductor nanoelectronics integration. [ABSTRACT FROM AUTHOR]

The construction of sensitive and durable sensitizers facilitates the development of metal oxide semiconductor (MOS)-based sensors with excellent gas sensing performance. Here, amorphous ruthenium oxide (RuOx) doped with lithium ions was successfully synthesized, and employed as a sensitizer to enhance the gas response of ZnO sensing materials. The gas sensing test results show that amorphous RuOx has better sensitization effects on ZnO than crystalline RuO2 at an optimum working temperature of 210 °C, such as a higher response, lower working temperature, better selectivity and faster response/recovery speed. The response of the RuOx/ZnO-1 sensor remains almost unchanged over a period of 60 days, while the RuOx sensitizer loaded on ZnO retains an amorphous structure after 60 days of working. Ex situ XPS also demonstrates that amorphous RuOx does not crystallize into polycrystalline RuO2 at 210 °C. The enhanced gas-sensing performance of the RuOx/ZnO-1 sensor can be attributed to the abundant active sites and better catalytic performance of amorphous RuOx, as well as enhanced electronic transmission between RuOx and ZnO. This is the first report showing that amorphous RuOx can work stably as a sensitizer at high temperature (210 °C), which facilitates the widespread use of amorphous metal catalysts in various fields. [ABSTRACT FROM AUTHOR]

Featured Application: Future NIR optoelectronic devices based on 2D materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDCs), are highly appealing in the fields of electronics, optoelectronics, energy, etc. Graphene, with high conductivity and high carrier mobility, is an excellent candidate for transparent electrodes. TMDCs have remarkably strong light absorption in the range of visible to infrared wavelength. High-performance photodetectors are expected to achieve through the combination of graphene and TMDCs. Nowadays, near-infrared (NIR) photodetectors play significant roles in many areas. MoTe2 with bandgap energy of about 1.0 eV in its bulk form is a promising material for cost-saving NIR photodetectors. Thus far, only a few of the reported studies on NIR photodetectors built on MoTe2/graphene heterostructures have achieved high responsivity and short response time simultaneously in one device. In this study, we fabricate graphene–MoTe2–graphene vertical van der Waals heterostructure devices through chemical vapor deposition (CVD) growth, wet transfer method, and dry etching technique. Under 1064 nm laser illumination, we acquire responsivity of as high as 635 A/W and a response time of as short as 19 μs from the as-fabricated device. Moreover, we acquire higher responsivity of 1752 A/W and a shorter response time of 16 μs from the Al2O3-encapsulated device. Our research drives the application of 2D materials in the NIR wavelength range. [ABSTRACT FROM AUTHOR]

Two-dimensional magnetic semiconductors provide a platform for studying physical phenomena at atomically thin limit, and promise magneto-optoelectronic devices application. Here, we report light helicity detectors based on graphene-CrI3-graphene vdW heterostructures. We investigate the circularly polarized light excited current and reflective magnetic circular dichroism (RMCD) under various magnetic fields in both monolayer and multilayer CrI3 devices. The devices exhibit clear helicity-selective photoresponse behavior determined by the magnetic state of CrI3. We also find abnormal negative photocurrents at higher bias in both monolayer and multilayer CrI3. A possible explanation is proposed for this phenomenon. Our work reveals the interplay between magnetic and optoelectronic properties in CrI3 and paves the way to developing spin-optoelectronic devices. Two-dimensional magnetic semiconductors hold promise for spin- and valleytronic applications. Here, the authors report the realization of light helicity detectors based on graphene/CrI3 van der Waals heterostructures, exhibiting a photocurrent behaviour determined by the magnetic state of CrI3. [ABSTRACT FROM AUTHOR]