12 results on '"Cheng, Shikang"'
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2. Experimental Study of 600 V Accumulation-Type Lateral Double-Diffused MOSFET With Ultra-Low On-Resistance
3. Optimization and Experiments of Lateral Semi-Superjunction Device Based on Normalized Current-Carrying Capability
4. A Novel High Voltage Ultra-Thin SOI-LDMOS With Sectional Linearly Doped Drift Region
5. Novel Silicon-Controlled Rectifier With Snapback-Free Performance for High-Voltage and Robust ESD Protection
6. An enlightening and feasible process concept for irradiated SJ-VDMOS to realize high-speed body diode and stable threshold voltage
7. A high-speed SOI-LIGBT with electric potential modulation trench and low-doped buried layer
8. A 600V high-side gate drive circuit with ultra-low propagation delay for enhancement mode GaN devices
9. Non-full depletion mode and its experimental realization of the lateral superjunction
10. Novel Superjunction LDMOS (>950 V) With a Thin Layer SOI
11. A novel 700V deep trench isolated double RESURF LDMOS with P-sink layer
12. Investigation of a latch-up immune silicon controlled rectifier for robust ESD application
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