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A new study investigates mechanisms for improving the stability of C54-TiSi2 on (001) Si by adding Nt to Ar during Ti sputtering.

The electrical behavior of the p+ and n+ channels and their contacts of these channels under high current densities are examined. The results reveal non-ohmic resistance change in both channels. The resistance of the p+-Si shows a nonlinear increase when current from 1 mA to 80 mA is applied gradually. In comparison, the resistance of the n+-Si increases with current by a smaller amount. It is hypothesized that the high field effect and Joule heating cause the initial nonlinear resistance increase.

Research was conducted to examine the growth of pinhole-free epitaxial DySi2-x films on atomically clean Si(111) by depositing a 2-micron-thick Dy layer onto Si(111) with a 1.5-nm-thick capping amorphous Si layer at room temperature followed by annealing at 700 degrees C in ultrahigh vacuum. A new mechanism based on experimental findings is proposed. Results indicate that the depth and size of the recessed regions increase with annealing time.

Research was conducted on the strong polarity effect on failure at nickel and nickel silicide contacts on both n- and p-type Si under high stress conditions. In a pair of cathode and anode contacts the Ni/n+-si contact pair fails at the anode, while the Ni/p+-Si pair fails at the cathode. Results show that the Ni/Ni2Si/n+-Si and Ni/Ni2Si/p+-Si failed preferentially at the cathode. In situ resistance data indicate that the resistance of the failed contact increases with time while that of the other contact in the pair remains constant.

A study was conducted on the kinetics of Cu3Ge development and reaction with Al using in situ resistivity measurements and other techniques. Results show that Cu3Ge films have low resistivity, as well as excellent oxidation resistance, adhesion on SiO2 and thermal stability on Si. Its applications as adhesion/barrier/passivation layer for Cu ultralarge scale integration metallization were also demonstrated,

Land development regulations in the state of New Jersey have been used to control development since the mid-1970s. The demand for affordable housing in the state is reaching a critical period since the median price of a single-family dwelling in New Jersey currently exceeds $170,000. Through various court decisions, there has been an attempt in the last few years to force affordable housing upon individual townships. This court remedy and the associated legislative action have essentially stalled due to the myriad of independent environmental regulations that exist throughout the state. At the present time, a land development project faces independent action from the local and county planning boards as well as a long list of individual permits required by the New Jersey Department of Environmental Protection and Energy (NJDEPE). Since all the preceding items are treated as independent and theoretically unrelated review procedures, the time it takes for a developer to obtain the necessary approvals prior to construction has risen to an average of two years. The paper will discuss these conditions and the impact upon market-rate units and affordable housing in the state of New Jersey.