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Artesunate is a widely used derivative of artemisinin for malaria. Recent researches have shown that artesunate has a significant anti‐inflammatory effect on many diseases. However, its effect on acute kidney injury with a significant inflammatory response is not clear. In this study, we established a cisplatin‐induced AKI mouse model and a co‐culture system of BMDM and tubular epithelial cells (mTEC) to verify the renoprotective and anti‐inflammatory effects of artesunate on AKI, and explored the underlying mechanism. We found that artesunate strongly down‐regulated the serum creatinine and BUN levels in AKI mice, reduced the necroptosis of tubular cells and down‐regulated the expression of the tubular injury molecule Tim‐1. On the other hand, artesunate strongly inhibited the mRNA expression of inflammatory cytokines (IL‐1β, IL‐6 and TNF‐α), protein levels of inflammatory signals (iNOS and NF‐κB) and necroptosis signals (RIPK1, RIPK3 and MLKL) in kidney of AKI mouse. Notably, the co‐culture system proved that Mincle in macrophage can aggravate the inflammation and necroptosis of mTEC induced by LPS, and artesunate suppressed the expression of Mincle in macrophage of kidney in AKI mouse. Overexpression of Mincle in BMDM restored the damage and necroptosis inhibited by artesunate in mTEC, indicating Mincle in macrophage is the target of artesunate to protect tubule cells in AKI. Our findings demonstrated that artesunate can significantly improve renal function in AKI, which may be related to the inhibition of Mincle‐mediated macrophage inflammation, thereby reducing the damage and necroptosis to tubular cells that provide new option for the treatment of AKI.

A high slope efficiency vertical-cavity surface-emitting laser (VCSEL) is described. The InGaAs/GaAsP strain compensated multiple quantum wells (MQWs) are designed by PICS3D. The wavelength redshift occurs due to the thermal effect, the lasing wavelength of MQWs is designed to be around 928 nm. The active region consists of five compressively strained 4.4 nm thick In0.16Ga0.84As quantum wells separated and surrounded by 6.2 nm thick GaAs0.88P0.12 tensile strained compensation layers to obtain the high quantum efficiency and ensure the stress release. Subsequently, the MQWs are grown by metal-organic chemical vapor deposition (MOCVD) and the photoluminescence (PL) spectrum is measured using an Nd:YAG laser (532 nm excitation), of which the peak wavelength is approximately 928 nm and the full width at half maximum is nearly 17.1 nm. The resonant cavity is surrounded by p- and n-DBRs. The n-DBRs are designed to be a 28-period AlAs/Al0.12Ga0.88As and 3.5-period Al0.90Ga0.10As/Al0.12Ga0.88As, and the p-DBR is designed to be a 23-period Al0.90Ga0.10As/Al0.12Ga0.88As. The thickness of each a material is \begin{document}$\lambda/4n$\end{document} (\begin{document}$\lambda$\end{document} = 940 nm, n represents refractive index), and 20 nm graded layer is inserted in the interface between two types of materials. The p-/n-DBRs’ experiment PL reflection spectra (using a white illuminant) are carried out, the central wavelength is around 938.7 nm, and the reflectivity values of p-/n-DBRs are nearly 99.0% and 99.7%, respectively. The VCSELs are grown by MOCVD technique, and treated by dry etching, wet oxidation, metal electrode technology and other processes. In the process of dry etching, the top mesa is treated by inductively coupled plasma with BCl3 and Cl2 chemistry. In order to expose the oxide layer the wet oxidized process is carried out, and the etching depth is nearly 3500 nm. An oxidation furnace is heated for 15 min prior to oxidation. Then the oxide aperture is shaped by the wet nitrogen oxidation furnace at 425 °C with an N2 flow of 200 sccm, and the oxide rate is approximately 0.40 \begin{document}${\text{μm}}$\end{document}/min for A0.98Ga0.02As. The diameter of oxide aperture is made into an 8 \begin{document}${\text{μm}}$\end{document} diameter. In the process of metal electrode technology, AuGeNi alloy is sputtered on the top surface to form p-type ohmic contact, and Ti/Pt/Au is evaporated on the back surface of substrate to form an n-type ohmic contact. Rapid thermal annealing at 350 °C in a nitrogen atmosphere is carried out subsequently to obtain a good-quality ohmic contact. Finally, we test the VCSELs’ L-I-V characteristics and spectra in different areas. In area 1, room-temperature lasing at around 940 nm is achieved with a threshold current of 0.95 mA, a slope efficiency of 0.96 W/A, and an output power of 4.75 mW. In area 2, threshold current is 1 mA, a slope efficiency is 0.81 W/A at 25 °C and threshold current is 1.9 mA, slope efficiency is 0.57 W/A at 25 °C. The output power values reach up to 3.850 mW and 2.323 mW at 25 °C and 80 °C, respectively.

Using transfer matrix method and TFcalc thin film design software,the reflectance spectrum of distributed Bragg reflector (DBR) and vertical cavity surface emitting laser (VCSEL) are simulated.The reflectance spectra from the cavity and surface are compared with each other,thus providing the basis for white light source (WLS) optical reflectance spectrum of the VCSEL epitaxial wafer.When using WLS to characterize VCSEL wafer,it is necessary to combine the simulation results and the shape of optical reflectance spectrum to speculate the reflectance seen from the cavity.The influences of different cap layers on the reflectance of DBRs are discussed theoretically and experimentally.With a 1/4 GaAs cap layer,the reflectance reaches up to 97.8% seen from the cavity.This design can make the wavelength of the VCSEL etalon picked easily because of avoiding the influence of test noise. The active region has higher heat accumulation due to the small area and poor thermal conductivity.The characteristics of the gain spectrum of InGaAs/AlGaAs strained quantum well (QW) under different temperatures and the temperature distribution in VCSEL are simulated by Crosslight software.The gain-to-cavity wavelength detuning is used to improve the slope efficiency and the temperature stability.The temperature in active region ranges from 360 K to 370 K.The gain peak wavelength and the Fabry-Perot cavity wavelength are designed in the ranges of 829-832 nm and 845-847 nm,respectively.Epitaxial wafer with top-emitting VCSEL structure grown by metal-organic chemical vapor deposition is characterized.The room temperature photoluminescence peak is at 827.5 nm and the etalon cavity wavelength measured by optical reflectance is 847.7 nm,which are consistent with designed values. The oxide restricted VCSELs with 7.5 m oxide aperture are fabricated.The image of the infrared light source CCD shows that the oxide aperture is circular.A passivation layer of 120 nm SiO2 is finally deposited to insulate water vapor.The threshold current is 0.8 mA,and the maximum output power reaches up to 9 mW at 13.5 mA.The optical spectrum at 6.0 mA reveals multiple transverse modes.The center wavelength is 852.3 nm and the root mean square (RMS) spectrum width is 0.6 nm,meeting the high-speed Datacom standards.Shannon theory indicates that the maximum data rate is not only proportional to bandwidth but also related to signal-to-noise ratio (SNR).It is effective to reduce relative intensity noise and enhance the SNR by increasing output power.From the eye diagram of 25 Gbit/s on-off key VCSEL,it is demonstrated that fall time is 38.66 ps,rise time is 41.54 ps,SNR is 5.6,and jitter RMS is 1.57 ps.Clear eye opening is observed from eye diagram of 25 GBaud/s PAM-4 VCSEL,which indicates the qualified 50 Gbit/s high speed performance.