265 results on '"Cheng, Chun‐Hu"'
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2. Performance investigation of hafnium-oxide negative capacitance transistor with remote nitrogen plasma treatment
3. Effect of capping layer on the ferroelectricity of hafnium oxide
4. Preparation and magnetic properties of high performance Ca–Sr based M-type hexagonal ferrites
5. A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides
6. Ferroelectric memory devices using hafnium aluminum oxides and remote plasma-treated electrodes for sustainable energy-efficient electronics
7. Effect of plasma oxidation on tin-oxide active layer for thin-film transistor applications
8. Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxides
9. High-k Metal–Insulator–Metal Capacitors for RF and Mixed-Signal VLSI Circuits: Challenges and Opportunities
10. Progress and challenges in p-type oxide-based thin film transistors
11. Influence of CaCO3 and SiO2 additives on magnetic properties of M-type Sr ferrites
12. Effect of specific surface area of raw material Fe2O3 on magnetic properties of YIG
13. Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs
14. Using nanoindentation to investigate the temperature cycling of Sn[sbnd]37Pb solders
15. Magnetic property enhancement of cobalt-free M-type strontium hexagonal ferrites by CaCO3 and SiO2 addition
16. Influence of plasma fluorination on p-type channel tin-oxide thin film transistors
17. Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices
18. Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors
19. Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 °C
20. Investigation of mechanical bending instability in flexible low-temperature-processed electrochromic display devices
21. Direct Fabrication of Inkjet-Printed Dielectric Film for Metal–Insulator–Metal Capacitors
22. Nanotribological properties of ALD-processed bilayer TiO2/ZnO films
23. Amorphous bilayer TiO2–InGaZnO thin film transistors with low drive voltage
24. Operation mechanism investigation of electrochromic display devices using tungsten oxides based on solid-state metal–oxide–metal capacitor structures
25. Structural stability of diffusion barriers in thermoelectric SbTe: From first-principles calculations to experimental results
26. Nanotribological behavior of ZnO films prepared by atomic layer deposition
27. Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure
28. Electrical characteristics investigation of ferroelectric memories using stacked and mixed hafnium zirconium oxides
29. Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate
30. Room-temperature flexible thin film transistor with high mobility
31. Temperature-Dependent Polarization Switching and Endurance Cycling Properties of HfAlO Ferroelectric Thin Film
32. Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices
33. Performance improvement of electrochromic display devices employing micro-size precipitates of tungsten oxide
34. Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate
35. Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering
36. Impact of stress and doping effects on the polarization behavior and electrical characteristics of hafnium–zirconium oxides
37. Ultrasonic dissimilar joining of aluminum alloy and polymer with the composite material of ABS polymer doping carbonized rice husk
38. Development of optimum preparation conditions of Fe-deficient M-type Ca-Sr System hexagonal ferrites
39. Effect of particle size of as‐milled powders on microstructural and magnetic properties of Y 3 Mn x Al 0.8‐ <scp> x F </scp> e 4.2 O 12 ferrites
40. Investigation on Channel Plasma Effect in Doped Tin-Oxide Thin-Film Transistors Using Experiments and Simulation
41. A p‐Type Ferroelectric Field‐Effect Transistor Using Ultrathin Hafnium Aluminum Oxide
42. High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec−1 swing
43. Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect
44. Physical Modeling of p-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors
45. Impact of Series-Connected Ferroelectric Capacitor in HfO₂-Based Ferroelectric Field-Effect Transistors for Memory Application
46. Improved Lower Electrode Oxidation of High-k TiCeO Metal-Insulator-Metal Capacitors by Using Dual Plasma Treatment
47. Low-Voltage Organic Thin-Film Transistor With High-κ LaYOx Gate Insulator
48. Flow Rate's Influence on Low Temperature Silicon Oxide Deposited by Atmospheric Pressure Plasma Jet for Organic Thin Film Tranisitor Application
49. Thermoelectric Characteristics of Annealed N-Type BiTe Thin Film
50. Characteristics of 4H-SiC RF MOSFETs on a Semi-Insualting Substrate
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