263 results on '"Chen, Shih-Hung"'
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2. Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors
3. Intrinsic resonance in gyrotron using non-resonant RF structure
4. Nonthermal relativistic electron acceleration due to laser-induced incoherent wakefields with external static magnetic fields
5. Complete Set of Homogeneous Isotropic Analytic Solutions in Scalar-Tensor Cosmology with Radiation and Curvature
6. Antigravity and the big crunch/big bang transition
7. Geodesically Complete Analytic Solutions for a Cyclic Universe
8. Matter Bounce Cosmology with the f(T) Gravity
9. A new approach to the vacuum of inflationary models
10. Cosmological perturbations in f(T) gravity
11. The Big Bang and Inflation United by an Analytic Solution
12. 10-point connector formed by two snap buttons
13. A smart capacitive sensing garment can detect respiratory signals in various situations
14. A multi-point capacitive sensing smart clothing applied to posture detection
15. Using textile capacitive sensors to train synchronized movement of hands
16. Impact of Sub-$\mu$m Wafer Thinning on Latch-Up Risk in DTCO/STCO Scaling Era
17. ESD Challenges in Advanced CMOS Technologies—Designing Diode Based ESD Protection
18. Geometry and Symmetry Structures in 2T Gravity
19. Dual Field Theories In (d-1)+1 Emergent Spacetimes From A Unifying Field Theory In d+2 Spacetime
20. ON-State Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs
21. Relativistic harmonics for turbulent wakefield diagnostics
22. Impact of on- and off-chip protection on the transient-induced latch-up sensitivity of CMOS IC
23. Relativistic plasma astrophysics with intense lasers
24. Simulation Study of a Dielectric Beam Energy Dechirper for the Proposed NSRRC EUV FEL Facility
25. Spectral Control of THz Super-Radiant Spontaneous Undulator Radiation Driven by Ultrashort Electron Beam with Energy Spread
26. Analog Computing in Memory (CIM) Technique for General Matrix Multiplication (GEMM) to Support Deep Neural Network (DNN) and Cosine Similarity Search Computing using 3D AND-type NOR Flash Devices
27. Flatness and Thickness Measurements of Circular Plate Component Using Laser Distance Meter
28. Transmission Rate Enhancement for Scalable H.264/AVC Video over MIMO Wireless Systems
29. Impact of Sub-μm Wafer Thinning on Latch-Up Risk in DTCO/STCO Scaling Era
30. ESD nMOSFETs in Advanced Bulk FinFET Technology With Dual S/D Epitaxy
31. On the universality of nonthermal electron acceleration due to quasi-turbulent wakefields
32. The Uses of a Dual-Band Corrugated Circularly Polarized Horn Antenna for 5G Systems
33. ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
34. TCAD study of latch-up sensitivity to wafer thinning below 500 nm
35. Impact of Sub-µm Wafer Thinning on Latch-up Risk in STCO Scaling Era
36. ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications
37. Wafer-Level LICCDM Device Testing
38. HBM and CDM ESD Performance of Advanced Silicon Photonic Components
39. 3-D Pic Simulation of the Self-Compression of a Sub-TW Laser Pulse in a Dense Gas Target
40. Dynamic Resource Allocation for Scalable H.264/AVC Video Transmission over MIMO Wireless Systems
41. Area-efficient ESD-transient detection circuit with smaller capacitance for on-chip power-rail ESD protection in CMOS ICs
42. Graphene under extreme electromagnetic field: energetic ion acceleration by direct irradiation of ultra intense laser on few layer suspended graphene
43. Design and Analysis of a 28 GHz T/R Front-End Module in 22-nm FD-SOI CMOS Technology
44. Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits
45. Polarization control of laser-driven x-ray
46. A bidirectional hybrid DWDM–PON employing optical injection locking technique and data comparators
47. Failure analysis and solutions to overcome latchup failure event of a power controller IC in bulk CMOS technology
48. Transmission Rate Enhancement for Scalable H.264/AVC Video over MIMO Wireless Systems
49. A 28 GHz front-end module with T/R switch achieving 17.2 dBm Psat, 21.5% PAEmax and 3.2 dB NF in 22 nm FD-SOI for 5G communication
50. RF/High-Speed I/O ESD Protection: Co-optimizing Strategy Between BEOL Capacitance and HBM Immunity in Advanced CMOS Process
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