Search

Combining theory and computation, we explore the Goos–Hänchen (GH) effect for electrons in a single-layered semiconductor microstructure (SLSM) modulated by Dresselhaus spin–orbit coupling (SOC). GH displacement depends on electron spins thanks to Dresselhaus SOC, therefore electron spins can be separated from the space domain and spin-polarized electrons in semiconductors can be realized. Both the magnitude and sign of the spin polarization ratio change with the electron energy, in-plane wave vector, strain engineering and semiconductor layer thickness. The spin polarization ratio approaches a maximum at resonance; however, no electron-spin polarization occurs in the SLSM for a zero in-plane wave vector. More importantly, the spin polarization ratio can be manipulated by strain engineering or semiconductor layer thickness, giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics. [ABSTRACT FROM AUTHOR]

We theoretically explore dwell time for electrons in a semiconductor microstructure, which is constructed on the surface of the InAs/AlxIn1-xAs heterostructure by patterning a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe in a parallel configuration. Dwell time is found to be dependent on electron spins. Spin-polarized dwell time can be controlled by changing an applied voltage to SM stripe. Thus, electron spins can be separated in time dimension, and such a semiconductor microstructure can be used as an electrically tunable temporal spin splitter for spintronics device applications. [ABSTRACT FROM AUTHOR]

We theoretically investigated the electron-spin transport properties of an antiparallel double $$\updelta $$ -magnetic-barrier nanostructure modulated by spin-orbit coupling (SOC), which could be fabricated experimentally by depositing two ferromagnetic stripes with horizontal magnetization on the top and bottom of an InAs/Al $$_{x}$$ In $$_{1-x}$$ As semiconductor heterostructure. Both Rashba and Dresselhaus SOCs were taken into account, and the transmission coefficient, conductance, and spin polarization calculated analytically by means of the improved transfer matrix method. The electron-spin transport through this nanosystem is found to be strongly dependent on the SOC. The electron-spin polarization is also found to vary with the strength of the SOC, potentially enabling tunable spin filters for use in spintronic applications. [ABSTRACT FROM AUTHOR]

• The control of spin-related GH shift by δ-doping is studied in a SLSN. • Owing to the SOC, GH displacement is still spin related, even if a δ-doping is embedded. • Spin polarization ratio can be modulated by δ-doping. • The SLSN can function as a structurally-controllable spatial electron-spin splitter. Introducing a δ-potential by atomic-layer doping technology, we theoretically explore its effect on Goos-Hänchen (GH) effect for electrons in a single-layered semiconductor nanostructure. Due to spin-orbit coupling, GH displacement of electrons still relies on its spins, which gives rise to an appreciable electron-spin polarization effect. Moreover, spin-dependent GH shifts can be manipulated by changing weight or position of δ-doping. Therefore, a structurally-controllable spatial electron-spin splitter can be developed for semiconductor spintronic device applications. [ABSTRACT FROM AUTHOR]

We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/Al x Ga 1-x As nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.e. interfacial confining electric field or strain engineering. Based on such a semiconductor nanostructure, a controllable spatial spin splitter can be proposed for spintronics applications.