Search

Lithium niobate (LN) crystal with anti‐reflective subwavelength structures (ASSs) has great applications in high‐power tunable optical parametric oscillator (OPO) lasers. However, it is still a great challenge to 3D nanofabrication of LN ASSs. Herein, a wet‐etching‐assisted laser polarization domain inversion (WE‐LPDI) technology is proposed to fabricate periodic cone arrays with a period from 200 nm to 4 µm on LN. Based on the optimized structural parameters, large‐area LN ASSs with a period of 1.3 µm and a height of 1.7 µm were fabricated on LN, which exhibits an average transmittance of 3–5 µm increasing from 78% to 85% and a highest transmittance of 88% at 5 µm. It has been demonstrated that the LN ASSs show high stability under high‐temperature and high‐power laser irradiation, which shows potential applications for high‐power mid‐IR lasers. The results indicate that the WE‐LPDI technology provides a novel way for 3D nanofabrication of LN. [ABSTRACT FROM AUTHOR]

Flexible multiplexing chips that permit reconfigurable multidimensional channel utilization are indispensable for revolutionary 6G terahertz communications, but the insufficient manipulation capability of terahertz waves prevents their practical implementation. Herein, we propose the first experimental demonstration of a flexible multiplexing chip for terahertz communication by revealing the unique mechanism of topological phase (TP) transition and perseveration in a heterogeneously coupled bilayer valley Hall topological photonic system. The synthetic and individual TPs operated in the coupled and decoupled states enable controllable on-chip modular TP transitions and subchannel switching. Two time-frequency interleaved subchannels support 10- and 12-Gbit/s QAM-16 high-speed data streams along corresponding paths over carriers of 120 and 130 GHz with 2.5- and 3-GHz bandwidths, respectively. This work unlocks interlayer heterogeneous TPs for inspiring ingenious on-chip terahertz-wave regulation, allowing functionality-reconfigurable, compactly integrated and CMOS-compatible chips. [ABSTRACT FROM AUTHOR]

Functionalized optical fiber tips featuring miniature sizes and diverse functions have broken the limitations of traditional optical fiber with fixed shapes and single materials, significantly enriching the application scenarios in communication, sensing, imaging, and other fields. However, the unconventional shape presents challenges in manufacturing arbitrarily sophisticated 3D micro/nano structures on optical fiber tips. Femtosecond laser 3D nano‐printing (FL‐3DNp) technology injects new vitality into the functionalization of fiber tips due to its high‐precision, customizable structure, and real 3D processing abilities, as well as advantages of non‐vacuum, maskless, and plentiful materials. This paper extensively compares the key performance parameters of various micro‐nano manufacturing technologies for functionalizing optical fiber probes and focuses on the FL‐3DNp technology. In addition, the latest research progresses are systematically presented from the perspective of structure and application. Finally, the current research challenges and future development directions in this emerging field are discussed, aiming at providing scientific and industrial guidance for FL‐3DNp in functionalizing optical fibers. [ABSTRACT FROM AUTHOR]

With high hardness, high thermal and chemical stability and excellent optical performance, hard materials exhibit great potential applications in various fields, especially in harsh conditions. Femtosecond laser ablation has the capability to fabricate three-dimensional micro/nanostructures in hard materials. However, the low efficiency, low precision and high surface roughness are the main stumbling blocks for femtosecond laser processing of hard materials. So far, etching-assisted femtosecond laser modification has demonstrated to be the efficient strategy to solve the above problems when processing hard materials, including wet etching and dry etching. In this review, femtosecond laser modification that would influence the etching selectivity is introduced. The fundamental and recent applications of the two kinds of etching assisted femtosecond laser modification technologies are summarized. In addition, the challenges and application prospects of these technologies are discussed.