Search

Tin-based halide perovskites have become the prospective photoelectric materials due to their remarkable optoelectronic properties and relatively low toxicity. However, the rapid crystallization and easy oxidation of Sn2+ to Sn4+ made it challenging to fabricate efficient photoelectric devices. Herein, benzylamine boron trifluoride (BBF) was introduced into the FASnI3 precursor solution to tune the crystal quality and photoelectric properties of FASnI3 films. It was demonstrated that the BBF passivates the film defects, reduces the content of Sn4+, enhances the PL intensity and stability, and improves the responsivity at wavelengths from 415 to 980 nm. The treatment of BBF with an optimal concentration of 1.5 mg mL−1 improves the responsivity of the device from 0.89 to 2.6 A W−1. The coordination of BBF with the anions/cations in the perovskite precursor is suggested to account for the improvement of crystal quality and the photoelectric properties of FASnI3 films. [ABSTRACT FROM AUTHOR]

The anomalous transport phenomena and underlying mechanism of SrTiO3 have been long term concerned, including the Kondo physics and anomalous Hall effects to be discussed herein. Nevertheless, a clarification of the physical origins for these phenomena and their intertransitions upon varying carrier density remain to be an issue, due to the limited modulation of carrier density. Herein, the intriguing transport behaviors of electrolyte‐gated SrTiO3 in the field‐effect transistor geometry are investigated, which allows a relatively wide carrier density window. It is revealed that the remarkable Kondo‐like resistance upturn, identified at relatively low carrier density, becomes gradually disappeared and replaced by the emerging nonlinear Hall resistance with increasing gating voltage, indicating the interesting gating‐controlled transport behaviors. The detailed discussions on the underlying physics suggest that the gating‐controlled transport can be well described by the multiband transport model taking into account magnetic scattering in the channel layer, a comprehensive scenario for the emergent transport effects in carrier‐doped SrTiO3. The present work provides a promising platform for exploring novel quantum materials phenomena in SrTiO3 and analogous systems. [ABSTRACT FROM AUTHOR]

The anomalous transport phenomena and underlying mechanism of SrTiO3 have been long term concerned, including the Kondo physics and anomalous Hall effects to be discussed herein. Nevertheless, a clarification of the physical origins for these phenomena and their intertransitions upon varying carrier density remain to be an issue, due to the limited modulation of carrier density. Herein, the intriguing transport behaviors of electrolyte‐gated SrTiO3 in the field‐effect transistor geometry are investigated, which allows a relatively wide carrier density window. It is revealed that the remarkable Kondo‐like resistance upturn, identified at relatively low carrier density, becomes gradually disappeared and replaced by the emerging nonlinear Hall resistance with increasing gating voltage, indicating the interesting gating‐controlled transport behaviors. The detailed discussions on the underlying physics suggest that the gating‐controlled transport can be well described by the multiband transport model taking into account magnetic scattering in the channel layer, a comprehensive scenario for the emergent transport effects in carrier‐doped SrTiO3. The present work provides a promising platform for exploring novel quantum materials phenomena in SrTiO3 and analogous systems. [ABSTRACT FROM AUTHOR]

Lead-free halide perovskites have great potential as stable and nontoxic optoelectronic materials. As a promising photovoltaic candidate, AgBiI4 has attracted attention due to its eco-friendly properties and strong stability, but the energy conversion efficiency (PCE) is still low and more effort towards improving the film quality is needed for photovoltaic applications. Here, we synthesized AgBiI4 films by antisolvent treatments with chlorobenzene (CB), toluene (TL), and isopropanol (IPA), respectively, and the corresponding solar cells of ITO/SnO2/AgBiI4/PTAA/Au were fabricated. Our data indicate that the IPA-treated AgBiI4 film has better microstructural quality and higher photovoltaic performance than the other-treated films. Furthermore, the PCE of the cells is enhanced from 0.82% to 1.61% upon IPA-treatment. This study suggests that besides a suitable relative polarity, an antisolvent with a lower boiling point and a higher miscibility with the host solvent is preferred in improving the AgBiI4 film quality and enhancing the photovoltaic performance of AgBiI4-based solar cells. [ABSTRACT FROM AUTHOR]

The article titled "Carrier-Modulated Anomalous Electron Transport in Electrolyte-Gated SrTiO3" discusses the research conducted by Peizhuo Chen, Zhibo Yan, and their colleagues on the anomalous Hall effect in electrolyte-gated SrTiO3. The study reveals the relationship between Kondo-like transport and the anomalous Hall effect, and how it changes with varying carrier density. The research provides insights into the multi-band transport mechanisms and presents a comprehensive phase diagram of n2D beyond the electrochemical windows. This research contributes to the field of electrolyte-based functional oxides. [Extracted from the article]

The article titled "Carrier-Modulated Anomalous Electron Transport in Electrolyte-Gated SrTiO3" discusses the research conducted by Peizhuo Chen, Zhibo Yan, and their colleagues on the anomalous Hall effect in electrolyte-gated SrTiO3. The study reveals the relationship between Kondo-like transport and the anomalous Hall effect, and how it changes with varying carrier density. The research provides insights into the multi-band transport mechanisms and presents a comprehensive phase diagram of n2D beyond the electrochemical windows. This research contributes to the field of electrolyte-based functional oxides. [Extracted from the article]