124 results on '"Chen, Nian-Ke"'
Search Results
2. Inert gas as electronic impurity in semiconductors: The case for active infrared absorption in silicon
3. Partial melting nature of phase-change memory Ge-Sb-Te superlattice uncovered by large-scale machine learning interatomic potential molecular dynamics
4. Defect physics in 2D monolayer I-VII semiconductor AgI
5. Atomic and electronic origin of robust off-state insulation properties in Al-rich AlxTey glass for ovonic threshold switching applications.
6. Inert Gas Element as Active Infrared‐Absorption Source and Donor in Silicon for Forbidden‐Wavelength Sensing
7. Intensive Structural Disorder Induces Electronic Delocalization: Amorphous Solid‐Liquid Transition in Ovonic Threshold Switching Materials.
8. First-principles research on mechanism of sub-band absorption of amorphous silicon induced by ultrafast laser irradiation
9. Thickness-dependent atomic structures of two-dimensional few-layer ZnO: A density functional theory study
10. Resistive Memory Devices at the Thinnest Limit: Progress and Challenges
11. Strong electron-polarized atom chain in amorphous phase-change memory Ge[sbnd]Sb[sbnd]Te alloy
12. Time-dependent density-functional theory molecular-dynamics study on amorphization of Sc-Sb-Te alloy under optical excitation
13. Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory
14. Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport
15. Resistive switching mechanism of MoS2 based atomristor
16. Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization
17. Recent Progress in Double-Layer Honeycomb Structure: A New Type of Two-Dimensional Material
18. Conductive mechanism in memristor at the thinnest limit: The case based on monolayer boron nitride
19. Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage
20. Resistive switching mechanism of MoS2 based atomristor.
21. Supplementary document for Intrinsically Polarized Emission from Organic Single-Crystal Light Emitting Devices with Record Polarization Ratio of 176 - 5583840.pdf
22. Highly polarized emission from organic single-crystal light-emitting devices with a polarization ratio of 176
23. Narrow-linewidth diamond single-photon sources prepared via femtosecond laser
24. Doping in the two-dimensional limit: p/n -type defects in monolayer ZnO
25. Orbital-selective electronic excitation in phase-change memory materials: a brief review
26. Mexican-hat potential energy surface in two-dimensional III2-VI3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase change
27. Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage.
28. Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3
29. High‐Throughput Screening for Phase‐Change Memory Materials
30. Optical subpicosecond nonvolatile switching and electron-phonon coupling in ferroelectric materials
31. Nucleation Dynamics of Phase‐Change Memory Materials: Atomic Motion and Property Evolution
32. Nanoscale amorphous interfaces in phase-change memory materials: structure, properties and design
33. Mexican-hat potential energy surface in two-dimensional III2-VI3 materials and the importance of entropy barrier in ultrafast reversible ferroelectric phase change.
34. Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3.
35. Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3.
36. Unconventional phase transition of phase-change-memory materials for optical data storage*
37. Nucleation Dynamics of Phase‐Change Memory Materials: Atomic Motion and Property Evolution.
38. Evaluation of Charged Defect Energy in Two‐Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method.
39. Phase-Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization
40. Directional Forces by Momentumless Excitation and Order-to-Order Transition in Peierls-Distorted Solids: The Case of GeTe
41. Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study” [Jan 18 140-146]
42. Electric field analyses on monolayer semiconductors: the example of InSe
43. Non-phase-separated 2D B–C–N alloys via molecule-like carbon doping in 2D BN: atomic structures and optoelectronic properties
44. Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study
45. Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy
46. Electronic excitation induced hydrogen-bond adjustment and lattice control in organic–inorganic hybrid cubic perovskites: a fixed occupation molecular dynamics study
47. Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation
48. Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: Evaluated via constrained excitation
49. Exploring long-wave infrared transmitting materials with AxBy form: First-principles gene-like studies
50. Origin of high data retention for Ge1Cu2Te3 phase-change memory
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.