373 results on '"Chen, Miin-Jang"'
Search Results
2. Atomic layer annealing for spatial tailoring in sub-4 nm AlN RRAM devices with low-voltage operation
3. Atomic layer epitaxy of twinned TiN by hydrogen-manipulated tailoring on monolayer
4. High-quality AlN epilayers prepared by atomic layer deposition and large-area rapid electron beam annealing
5. Impact of monolayer engineering on ferroelectricity of sub-5 nm Hf0.5Zr0.5O2 thin films
6. Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction
7. Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors
8. Large area and rapid electron beam annealing for high-quality epitaxial GaN layer
9. Enhancement of energy storage for electrostatic supercapacitors through built-in electric field engineering
10. Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget
11. Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing
12. Conformal atomic layer etching for Ge based on sacrificial oxide with higher Gibbs free energy of formation
13. Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
14. Robust energy storage density and negative capacitance in antiferroelectric heterostructures grown by atomic layer epitaxy.
15. Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing
16. Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
17. Sub-7-nm textured ZrO2 with giant ferroelectricity
18. Indirect Enhancement of ALD Thin-Film Properties Induced by the ECAP Modification of an As-Extruded Mg-Ca Alloy.
19. Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering
20. Sub-nanometer heating depth of atomic layer annealing
21. Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment
22. Selective growth of platinum nanolines by helium ion beam induced deposition and atomic layer deposition
23. Modulation of ferroelectricity and antiferroelectricity of nanoscale ZrO2 thin films using ultrathin interfacial layers
24. High chemical resistance and Raman enhancement in Ag/Al2O3 core-shell plasmonic nanostructures tailored by atomic layer deposition
25. Improvement of Corrosion, Mechanical Properties, and Biocompatibility of Mg-Ca Alloy with Peald Al2o3/Zro2 Multilayer Films
26. Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films
27. Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization
28. Sharp Transformation across Morphotropic Phase Boundary in Sub‐6 nm Wake‐Up‐Free Ferroelectric Films by Atomic Layer Technology
29. Study of Atomic Layer Deposition Nano-Oxide Films on Corrosion Protection of Al-SiC Composites
30. Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 °C with three-pulsed precursors per growth cycle
31. Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition
32. Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films.
33. Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
34. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
35. ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 °C with three-pulsed precursors in every growth cycle
36. Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
37. ZnO/Al2O3 core/shell nanorods array as excellent anti-reflection layers on silicon solar cells
38. Negative capacitance from the inductance of ferroelectric switching
39. Dielectric Constant Enhancement and Leakage Current Suppression of Metal–Insulator–Metal Capacitors by Atomic Layer Annealing and the Capping Layer Effect Prepared with a Low Thermal Budget
40. Anti-reflection textured structures by wet etching and island lithography for surface-enhanced Raman spectroscopy
41. The strain dependence of Ge1 − xsnx (x = 0.083) Raman shift
42. Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
43. Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
44. Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm
45. Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory devices
46. Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen
47. Silicon-based Multi-nanowire Biosensor with High-k Dielectric and Stacked Oxide Sensing Membrane for Cardiac Troponin I Detection
48. Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
49. Alterations in the local structure of the Co/SiO2 dispersed carbon nanotubes induced by CO molecules during microwave irradiation
50. Cryogenic Si/SiGe Heterostructure Flash Memory Devices
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.