362 results on '"Chen, Miin-Jang"'
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2. Atomic layer epitaxy of twinned TiN by hydrogen-manipulated tailoring on monolayer
3. High-quality AlN epilayers prepared by atomic layer deposition and large-area rapid electron beam annealing
4. Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors
5. Large area and rapid electron beam annealing for high-quality epitaxial GaN layer
6. Enhancement of energy storage for electrostatic supercapacitors through built-in electric field engineering
7. Ferroelectric enhancement of Al-doped HfO2 thin films by rapid electron beam annealing in a low thermal budget
8. Conformal atomic layer etching for Ge based on sacrificial oxide with higher Gibbs free energy of formation
9. Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing
10. Indirect Enhancement of ALD Thin-Film Properties Induced by the ECAP Modification of an As-Extruded Mg-Ca Alloy.
11. Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
12. Improvement of Corrosion, Mechanical Properties, and Biocompatibility of Mg-Ca Alloy with Peald Al2o3/Zro2 Multilayer Films
13. Sub-7-nm textured ZrO2 with giant ferroelectricity
14. Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering
15. Selective growth of platinum nanolines by helium ion beam induced deposition and atomic layer deposition
16. Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films
17. Modulation of ferroelectricity and antiferroelectricity of nanoscale ZrO2 thin films using ultrathin interfacial layers
18. Nucleation engineering for atomic layer deposition of uniform sub-10 nm high-K dielectrics on MoTe2
19. High chemical resistance and Raman enhancement in Ag/Al2O3 core-shell plasmonic nanostructures tailored by atomic layer deposition
20. Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films.
21. Sharp Transformation across Morphotropic Phase Boundary in Sub‐6 nm Wake‐Up‐Free Ferroelectric Films by Atomic Layer Technology
22. Study of Atomic Layer Deposition Nano-Oxide Films on Corrosion Protection of Al-SiC Composites
23. Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 °C with three-pulsed precursors per growth cycle
24. Dielectric Constant Enhancement and Leakage Current Suppression of Metal–Insulator–Metal Capacitors by Atomic Layer Annealing and the Capping Layer Effect Prepared with a Low Thermal Budget
25. Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition
26. Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
27. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
28. ZnO thin films prepared by atomic layer deposition at various temperatures from 100 to 180 °C with three-pulsed precursors in every growth cycle
29. Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
30. Impact of monolayer engineering on ferroelectricity of sub-5 nm Hf0.5Zr0.5O2 thin films
31. Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction
32. Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm
33. Atomic layer engineering on resistive switching in sub-4 nm AlN resistive random access memory devices
34. ZnO/Al2O3 core/shell nanorods array as excellent anti-reflection layers on silicon solar cells
35. The strain dependence of Ge1 − xsnx (x = 0.083) Raman shift
36. Negative capacitance from the inductance of ferroelectric switching
37. Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
38. Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
39. Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing
40. Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen
41. Silicon-based Multi-nanowire Biosensor with High-k Dielectric and Stacked Oxide Sensing Membrane for Cardiac Troponin I Detection
42. Cryogenic Si/SiGe Heterostructure Flash Memory Devices
43. Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
44. Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
45. Alterations in the local structure of the Co/SiO2 dispersed carbon nanotubes induced by CO molecules during microwave irradiation
46. Improvement of Corrosion Resistance and Biocompatibility of Biodegradable Mg–Ca Alloy by ALD HfZrO2 Film
47. Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing
48. Enhancement of photoluminescence intensity from Si nanodots using Al 2O 3 surface passivation layer grown by atomic layer deposition
49. Temperature-dependent photoluminescence of arsenic-doped Si nanocrystals
50. Modulation of Zirconia Ferroelectricity via Crystal Orientation of Pt Electrode
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