72 results on '"Chen, Lianhui"'
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2. Application of coagulation-microfiltration for membrane fouling mitigation in highly saline dyeing wastewater: Anti-fouling modification of membrane and novel insight of salt into regulation of cake layer formation
3. Study on photocrosslinking self-plasticized polyvinyl alcohol photosensitive film
4. Mixed ion-electron conductive binders coupling superior stiffness and toughness establish dual crosslinking stable silicon anodes
5. Preparation, structure, and properties of biodegradable core‐sheath composite fibers derived from poly (butylene adipate‐co‐terephthalate) and polylactic acid
6. Study on Detection Technology of Antibiotic Content in Soil
7. Novel Multifunction Epoxy Thermoset Designed by Manipulating the Silicon-Oxidation Flexible-Rigid Network Topology: Toughening, Strengthening, and Acid/Alkali Resistance
8. An intelligent hybrid system for condition monitoring and fault diagnosis
9. Study of the long-wavelength optic phonons in AlGaInP and AlGaInAs
10. Early Growth Hormone Intervention Improves Glucose Metabolism in Adult Rats Born Small for Gestational Age.
11. Early Growth Hormone Intervention Improves Glucose Metabolism in Adult Rats Born Small for Gestational Age
12. ChemInform Abstract: Sulfur—Silicon Bond Activation Catalyzed by Cl/Br Ions: Waste‐Free Synthesis of Unsymmetrical Thioethers by Replacing Fluoride Catalysis and Fluorinated Substrates in SNAr Reactions.
13. Sulfur–silicon bond activation catalysed by Cl/Br ions: waste-free synthesis of unsymmetrical thioethers by replacing fluoride catalysis and fluorinated substrates in SNAr reactions
14. Novel large-coupled optical cavity semiconductor lasers and multiactive region light-emitting diodes with high performance.
15. Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes.
16. High-efficiency low-vertical-divergence-angle 980-nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers.
17. High-efficiency low-vertical-divergence-angle 980-nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers
18. Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes
19. 650-nm AlGaInP quantum well lasers for the application of DVD
20. High-power 980-nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion
21. Influence of graded index waveguides on the gain difference between TEO and TMO modes of semiconductor optical amplifiers
22. High-performance 155-μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
23. High-quality carbon-doped GaAs/AlGaAs material growth in MOCVD and its application for optoelectronic devices
24. Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metalorganic chemical vapor deposition
25. Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices
26. Study of single-mode 650-nm AlGaInP quantum well laser diodes for DVD
27. Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
28. High-brightness AlGaInP orange light-emitting diodes
29. Coupled Alx Ga1-xAs-AlAs distributed Bragg reflectors for high-brightness AlGaInP light-emitting diodes
30. High-temperature operation of 650-nm AlGaInP quantum well laser diodes grown by LP-MOCVD
31. Semiconductor lasers for construction of information infrastructure in mainland of China
32. High-performance 1.3-um and 1.55-um InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD
33. 1.3-um and 1.55-um InGaAsP/InP quantum well light-emitting diodes with narrow beam divergence
34. AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE
35. Semiconductor lasers in China
36. Design and fabrication of 980-nm InGaAs/A1GaAs quantum well lasers with low beam divergence
37. 650-nm AlGaInP quantum well lasers for the application of DVD.
38. Optoelectronic device research in China
39. Influence of graded index waveguides on the gain difference between TEO and TMO modes of semiconductor optical amplifiers.
40. Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices.
41. High-temperature operation of 650-nm AlGaInP quantum well laser diodes grown by LP-MOCVD.
42. Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metalorganic chemical vapor deposition.
43. High-power 980-nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion.
44. Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs.
45. High-performance 155-m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method.
46. Coupled Alx Ga1-xAs-AlAs distributed Bragg reflectors for high-brightness AlGaInP light-emitting diodes.
47. Semiconductor lasers for construction of information infrastructure in mainland of China.
48. AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE.
49. High-performance 1.3-um and 1.55-um InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD.
50. Optoelectronic device research in China.
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