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3D optical storage, spatially expanding storage capacity, is regarded as an effective and economical way to break the diffraction limit of the conventional 2D optical storage. In this study, a new kind of 3D optical storage medium, i.e., vanadium ions (V5+) doped sodium borate glass, is developed, showing intriguing spatially‐selected photochromism (PC) upon laser driven excitation. Significantly, a brand‐new PC mechanism of V5+‐aggregation regulated by localized optical basicity (OB) of glass is proposed and demonstrated. The developed PC glass is responsive to a low‐price desktop‐level mini‐laser to encode optical information, yields unique twofold decoding modes in bright‐ and dark‐fields, and shows good data erasibility. 3D volumetric optical storage with a memory density of ≈480 Mbit cm−3 is realized with the aid of an advanced femtosecond laser micro‐machining system. The findings suggest a novel design approach to fabricate 3D PC glass in terms of manipulating the scale of optical basicity in glass, hopefully stimulating the development of new multi‐dimensional PC optical storage media. [ABSTRACT FROM AUTHOR]

Arrays of flexible organic thin-film transistors (OTFTs) are the prerequisite to realize commercialization of flexible electronics. However, photolithography and print techniques are uneasy to combine high performance, high integration density, and compatibility with flexible substrates to fabricate OTFT arrays. In this work, OTFT arrays with high resolution, flexibility and process convenience are patterned by femtosecond laser (fs-laser). 1 cm2 of area can accommodate up to 6250 transistors with sharp edges and short channel lengths by selective processing. Furthermore, micron-scale resolution flexible image sensor with integration potential were verified. Hence, these results will impel the development of flexible wearable electronic devices in the future. [ABSTRACT FROM AUTHOR]

Summary: Transition metal disulfides have been widely used in lithium/sodium ion batteries as cathode materials. However, the huge structural changes in electrochemical processes remain a challenge. Here, 3DG‐MoS2 hybrid nanomaterials with particular sandwich architecture were synthesized successfully by a simple evaporation and hydrothermal reaction method. This process enlarged the spacing between the graphene layers, increased the surface area, promoted electron and lithium/sodium ions diffusion, and alleviated structural deformations during ion insertion, which altogether improved the performance of lithium/sodium storage. Therefore, 3DG‐MoS2 composite nanomaterials exhibited excellent cyclic stability electrochemical performance (955 mAhg−1 at 1 Ag−1 after 500 cycle for LIBs; 479 mA hg−1 at 1 Ag−1 after 300 cycle for SIBs). When the current density gradually reduced to 100 mAg−1, it still delivered excellent lithium/sodium storage capacity ability (1130 mAhg−1 for lithium storage; 663 mAhg−1 for sodium storage) even at 10 cycles of 2 Ag−1 deep charge and discharge. [ABSTRACT FROM AUTHOR]

Up-conversionluminescence in rare earth ions (REs) doped nanoparticles has attractedconsiderable research attention for the promising applications insolid-state lasers, three-dimensional displays, solar cells, biologicalimaging, and so forth. However, there have been no reports on REsdoped nanoparticles to investigate their polarized energy transferup-conversion, especially for single particle. Herein, the polarizedenergy transfer up-conversion from REs doped fluoride nanorods isdemonstrated in a single particle spectroscopy mode for the firsttime. Unique luminescent phenomena, for example,sharpenergy level split and singlet-to-triplet transitions at room temperature,multiple discrete luminescence intensity periodic variation with polarizationdirection, are observed upon excitation with 980 nm linearly polarizedlaser. Furthermore, nanorods with the controllable aspect ratio andsymmetry are fabricated for analysis of the mechanism of polarizationanisotropy. The comparative experiments suggest that intraions transitionproperties and crystal local symmetry dominate the polarization anisotropy,which is also confirmed by density functional theory calculations.Taking advantage of the REs based up-conversion, potential applicationin polarized microscopic multi-information transportation is suggestedfor the polarization anisotropy from REs doped fluoride single nanorodor nanorod array. [ABSTRACT FROM AUTHOR]

We studied the orientations of single Nitrogen-Vacancy (NV) color centers in nanodiamonds on a gold film by defocused imaging with a scanning confocal microscopy system and an electron-multiplying charge-coupled device. It was demonstrated that the perpendicular oriented dipole of single NV color center showed shorter fluorescence lifetime and higher fluorescence intensity than any other oriented ones on account of higher coupling efficiency of local electronic field induced by the surface plasmon resonance on the gold film for a vertical transition dipole. [ABSTRACT FROM PUBLISHER]

Floating gate transistor photomemory (FGTPM) has been regarded as one of the most prospective nonvolatile photomemory devices because of its compatibility with transistor-based circuits, nondestructive reading, and multilevel storage. Until now, owing to the excellent photoelectric properties, lead-based perovskite nanocrystals (PNCs) have been applied in most of the perovskite-based FGTPM devices and embedded in the polymer matrix as the charge trapping layer. However, the polymer matrix and its solvent would degrade the structure of the PNCs, resulting in the loss of their unique photoresponse ability. In addition, lead-based perovskites have environmental unfriendliness and poor stability. Hence, a novel nonvolatile FGTPM based on oligomeric silica (OS) wrapped lead-free double perovskite Cs 2 AgBiBr 6 NCs was demonstrated for the first time. Acting synchronously as the protection layer for the discrete Cs 2 AgBiBr 6 NCs and charge tunneling layer for the FGTPM device, the OS layer can achieve controllable thickness by adjusting the process parameters, leading to an adjustment of storage properties with a larger memory window (58 V). Owing to the excellent photoresponse ability of the Cs 2 AgBiBr 6 @OS composite layer, the FGTPM device exhibited high-performance with repeatable multilevel nonvolatile photomemory and precise photoresponse ability of wavelength/time/power-dependent photoirradiation without extra gate biasing.