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149 results on '"Chedjou, Jean Chamberlain"'

1. Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape

Author

Atamuratov, Atabek E., Khalilloev, Mahkam M., Yusupov, Ahmed, Chedjou, Jean Chamberlain, and Kyamakya, Kyandoghere

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

The influence of the channel shape in a junctionless silicon-on-insulator finned field-effect transistor (JL SOI FinFET) on the amplitude of random telegraph noise (RTN) induced by single interface trapped charge has been simulated for the transistors with rectangular, trapezoidal, and triangular fin cross sections. The simulation of the RTN amplitude distribution along the channel induced by a single charge trapped at interface defect located at the fin top and at sidewall of JL SOI FinFETs with channels of different shapes is considered. It is established that at trapping the single charge at sidewall surface of the channel, the lowest RTN amplitude is seen for the triangular cross-section and the highest for the rectangular and trapezoidal cross-sections. At the single charge trapping at the top surface of the channel, the RTN amplitude is higher for the rectangle than for the trapezoidal cross-section.

Published
2024
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5. Development of a Novel Method for Image Resizing Using Artificial Neural Network

Author

Arabboev, Mukhriddin, Begmatov, Shohruh, Nosirov, Khabibullo, Tashmetov, Shakhzod, Saydiakbarov, Saydiakhrol, Chedjou, Jean Chamberlain, Kyamakya, Kyandoghere, Goos, Gerhard, Founding Editor, Hartmanis, Juris, Founding Editor, Bertino, Elisa, Editorial Board Member, Gao, Wen, Editorial Board Member, Steffen, Bernhard, Editorial Board Member, Yung, Moti, Editorial Board Member, Zaynidinov, Hakimjon, editor, Singh, Madhusudan, editor, Tiwary, Uma Shanker, editor, and Singh, Dhananjay, editor

Published
2023
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15. A Novel Concept Combining Neuro-computing and Cellular Neural Networks for Shortest Path Detection in Complex and Reconfigurable Graphs

Author

Chedjou, Jean Chamberlain, Kyamakya, Kyandoghere, Junqueira Barbosa, Simone Diniz, editor, Chen, Phoebe, editor, Cuzzocrea, Alfredo, editor, Du, Xiaoyong, editor, Filipe, Joaquim, editor, Kara, Orhun, editor, Kotenko, Igor, editor, Sivalingam, Krishna M., editor, Ślęzak, Dominik, editor, Washio, Takashi, editor, Yang, Xiaokang, editor, Mladenov, Valeri M., editor, and Ivanov, Plamen Ch., editor

Published
2014
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25. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS 2 -Based MOSFETs.

Author

Atamuratov, Atabek E., Saparov, Khushnudbek Sh., Yusupov, Ahmed, and Chedjou, Jean Chamberlain

Subjects
METAL oxide semiconductor field-effect transistors, TRANSISTORS, OXIDES, ALUMINUM oxide, TEMPERATURE effect
Abstract

In this paper, degradation effects, such as self-heating effect (SHE) and drain-induced barrier lowering (DIBL) effect in 2D MoS2-based MOSFETs are investigated through simulations. The SHE is simulated based on the thermodynamic transport model. The dependence of the DIBL effect and the lattice temperature in the middle of the channel on the gate length is considered for transistors with different gate oxide and back oxide (BOX) materials. The effects of Al2O3 and HfO2 as gate oxide and SiO2 and HfO2 as BOX materials are compared. Transistors, in which the channel is fully and partially (i.e., just below the gate) covered by a gate oxide, are considered. It is shown that the transistors with Al2O3 as gate oxide and SiO2 as BOX materials have higher immunity to DIBL effect and transistors with HfO2 as gate oxide and HfO2 as BOX materials have higher immunity to SHE. [ABSTRACT FROM AUTHOR]

Published
2023
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35. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

Author

Universidade de Santiago de Compostela. Centro de Investigación en Tecnoloxías da Información, Universidade de Santiago de Compostela. Departamento de Electrónica e Computación, Atamuratov, Atabek E., Khalilloev, Mahkam M., Yusupov, Ahmed, García Loureiro, Antonio Jesús, Chedjou, Jean Chamberlain, Kyandoghere, Kyamakya, Universidade de Santiago de Compostela. Centro de Investigación en Tecnoloxías da Información, Universidade de Santiago de Compostela. Departamento de Electrónica e Computación, Atamuratov, Atabek E., Khalilloev, Mahkam M., Yusupov, Ahmed, García Loureiro, Antonio Jesús, Chedjou, Jean Chamberlain, and Kyandoghere, Kyamakya

Abstract

In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on the amplitude of the random telegraph noise (RTN) in Junctionless Fin Field Effect Transistor (FinFET) is modelled and simulated. The RTN amplitude dependence on the number of single charges trapped in a single defect is modelled and simulated too. It is found out that the RTN amplitude in the Junctionless FinFET does not depend on the shape, nor on the size of the single defect area. However, the RTN amplitude in the subthreshold region does considerably depend on the number of single charges trapped in the defect

Published
2020

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