Search

The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum confinement, while the unidirectional built-in electric field from the asymmetric hetero-interfaces results in pronounced Rashba SOC strength. By tuning the Al concentration in the top Al$_x$In$_{1-x}$Sb barrier layer, the optimal structure with $x = 0.15$ shows the largest Rashba coefficient of 0.23 eV-Angstrom. and the highest low-temperature electron mobility of 4400 cm$^2$/Vs . Quantitative investigations of the weak anti-localization effect further confirm the dominant D'yakonov-Perel (DP) spin relaxation mechanism during charge-to-spin conversion. These findings highlight the significance of quantum well engineering in shaping magneto-resistance responses, and narrow bandgap semiconductor-based heterostructures may offer a reliable platform for energy-efficient spintronic applications.

The search for two-dimensional (2D) van der Waals (vdW) multiferroics is an exciting yet challenging endeavor. Room-temperature 2D vdW few-layer multiferroic is a much bigger insurmountable obstacle. Here we report the discovery of an unconventional 2D vdW multiferroic with out-of-plane ferroelectric polarization and long-range magnetic orders in trilayer NiI2 device from 10 K to 295 K. The evolutions of magnetic domains with magnetic field, and the evolutions between ferroelectric and antiferroelectric phase have been unambiguously observed. More significantly, we realize a robust mutual control of magnetism and ferroelectricity at room temperature. The magnetic domains are manipulated by a small voltage ranging from 1 V to 6 V at 0 T and 295 K. This work opens opportunities for exploring multiferroic physics at the limit of few atomic layers., Comment: 4 figures

Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence of magnetic moment-dependent (MD) and magnetic field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to the different spin transport mechanisms, these two types of nonreciprocal charge transport show opposite polarities with respect to the magnetic field direction, which further enable an effective phase modulation of the angular-dependent magnetoresistance. Besides, the demonstrations of both the tunable UMR response and two-terminal spin-orbit torque-driven magnetization switching validate our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic device design.

The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect (APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO2 and IrO2 single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.

The manipulation of symmetry provides an effective way to tailor the physical orders in solid-state systems. With the breaking of both the inversion and time-reversal symmetries, non-reciprocal magneto-transport may emerge in assorted non-magnetic systems to enrich spintronic physics. Here, we report the observation of the uni-directional magneto-resistance (UMR) in the lattice-matched InSb/CdTe film up to room temperature. Benefiting from the strong built-in electric field of $0.13 \mathrm{~V} \cdot \mathrm{nm}^{-1}$ in the hetero-junction region, the resulting Rashba-type spin-orbit coupling and quantum confinement warrant stable angular-dependent second-order charge current with the non-reciprocal coefficient 1-2 orders of magnitude larger than most non-centrosymmetric materials at 298 K. More importantly, this heterostructure configuration enables highly-efficient gate tuning of the rectification response in which the enhancement of the UMR amplitude by 40% is realized. Our results advocate the narrow-gap semiconductor-based hybrid system with the robust two-dimensional interfacial spin texture as a suitable platform for the pursuit of controllable chiral spin-orbit devices and applications.

Magnetic skyrmions are nanoscale spin whirlpools that promise breakthroughs in future spintronic applications. Controlled generation of magnetic skyrmions by electric current is crucial for this purpose. While previous studies have demonstrated this operation, the topological charge of the generated skyrmions is determined by the direction of the external magnetic fields, thus is fixed. Here, we report the current-induced skyrmions creation in a chiral magnet FeGe nanostructure by using the \emph{in-situ} Lorentz transmission electron microscopy. We show that magnetic skyrmions or antiskyrmions can be both transferred from the magnetic helical ground state simply by controlling the direction of the current flow at zero magnetic field. The force analysis and symmetry consideration, backed up by micromagnetic simulations, well explain the experimental results, where magnetic skyrmions or antiskyrmions are created due to the edge instability of the helical state in the presence of spin transfer torque. The on-demand generation of skyrmions and control of their topology by electric current without the need of magnetic field will enable novel purely electric-controlled skyrmion devices., Comment: 5 pages and 4 figures