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Coherent X-ray imaging techniques, such as in-line holography, exploit the high brilliance provided by diffraction-limited storage rings to perform imaging sensitive to the electron density through contrast due to the phase shift, rather than conventional attenuation contrast. Thus, coherent X-ray imaging techniques enable high-sensitivity and low-dose imaging, especially for low-atomic-number (Z) chemical elements and materials with similar attenuation contrast. Here, the first implementation of in-line holography at the NanoMAX beamline is presented, which benefits from the exceptional focusing capabilities and the high brilliance provided by MAX IV, the first operational diffractionlimited storage ring up to approximately 300 eV. It is demonstrated that in-line holography at NanoMAX can provide 2D diffraction-limited images, where the achievable resolution is only limited by the 70 nm focal spot at 13 keV X-ray energy. Also, the 3D capabilities of this instrument are demonstrated by performing holotomography on a chalk sample at a mesoscale resolution of around 155 nm. It is foreseen that in-line holography will broaden the spectra of capabilities of MAX IV by providing fast 2D and 3D electron density images from mesoscale down to nanoscale resolution., QC 20220131

Semiconductor Nanowires are promising building blocks for advanced optoelectronic devices since their small diameter give rise to quantization effects. The small diameter also makes them susceptible to non-radiative recombination due to surface states. A consequence of non-radiative surface recombination is a reduction of a total recombination lifetime. This is in turn limits an internal quantum efficiency (IQE) of optoelectronic devices because the IQE is defined as a ratio between the radiative recombination lifetime and the total recombination lifetime. It is therefore important to produce the nanowires with as long total lifetime as possible in order to achieve a significant IQE. This thesis aims to improve the IQE of the nanowires by using the surface passivating layer with a larger bandgap material on ternary alloy (InGaP) nanowires. The larger bandgap of the passivating layer will allocate the charge carriers into the center nanowire which, therefore, decrease the chance of the recombination at the surface. The passivating layer covers the side facet of the nanowires as a shell. The nanowires with this shell layer are called core-shell nanowires. Photoluminescence (PL) spectroscopy was used to evaluate the material composition and the bandgap of the core nanowire as well as the shell layer. Various compositions of shell materials give different band offsets between the core and the shell. Time-resolved photoluminescence (TRPL) was performed on the nanowires with and without the shell to measure the recombination lifetime. Finally, the energy structure of the non-radiative recombination center was studied by a temperature dependent PL (TDPL) and a power dependent TRPL. For the plain nanowires, the result shows that the non-radiative recombination is indeed related to surface states as expected. The total lifetime of the thinner wires is shorter than the thicker wires. Therefore, the IQE will degrade for the devices based on the thin nanowires. The TDPL reveals, The performance of the computer processor has improved drastically over the past decade through an increasing number of transistors employed on a single processor chip. A simple approach for having a larger amount of transistors on a single circuit is to scale down the device. The smallest feature of a transistor is for example only a few nanometers (nm=0.000000001m) large which is about ten thousand times smaller than human’s hair. However, electrical and optical properties of miniaturized devices are impacted by quantum effects, such as energy quantization, and tunneling. These effects can either limit or improve the performance of the devices. A new nanostructure, Semiconductor Nanowire, is introduced as a building block of advanced electrical devices. It is a semiconductor material with a cylindrical shape, in which the diameter can be on a scale of nanometers and the length is about a few micrometers. The configuration of the nanowire provides a large surface comparing to its volume. With its large surface, it is therefore suitable for sensing applications, especially as an optoelectronic device. The purpose of the optoelectronic devices is to be either a light detector or a light source. For the nanowire as the light detector, the absorbed light excites electrons from a stationary state to move freely within the nanowire. Those free electrons make the device electrically conductive. For the light source, the electrons can be excited by an external energy; such as electricity or light. The excited electrons would then relax back to their stationary state whereupon release the excess energy in the form of light. The efficiency of those devices is determined by how well the energy is transferred between the free electrons and the light. An ideal condition is that every electron should emit the light as it relaxes for the light source. In contrast for the light detector, all the absorbed light should give rise to the free electrons. However, defects in the materia