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3. Out-of-pile testing of the CALIPSO irradiation device for the Jules Horowitz Reactor

Author

Moulin, D., Charvet, P., Challet, F., Chaumont, G., amplexor, amplexor, CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
[PHYS.NUCL] Physics [physics]/Nuclear Theory [nucl-th], Test, [PHYS.NUCL]Physics [physics]/Nuclear Theory [nucl-th], [PHYS.NEXP] Physics [physics]/Nuclear Experiment [nucl-ex], Sodium, Reactor, Pump, [PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex], NaK, Material, Electromagnetic, Potassium, Device, Irradiation
Abstract

International audience; The CALIPSO device is a NaK liquid metal loop for material irradiation in the core of the Jules Horowitz Reactor. A prototype for out-of pile testing was manufactured and a specific experimental facility called SOPRANO was built at the CEA Cadarache centre. Since September 2013, the qualification of the prototype over all its operating range has been carried out.After a short recall on the CALIPSO device and its operating principle, the main results of the experimental campaigns are presented in this paper. The electromagnetic pump showed very good time stability and reproducibility all along the campaigns to control NaK flowrate up to 0.5 kg/s.Concerning thermal behaviour, the modularity of the heat exchanger is very efficient to enlarge the temperature operating range. For instance, the targeted 450°C NaK temperature was obtained with the shorter heat exchanger configuration. Besides, by controlling the electrical power parameters, one could flatter the NaK temperature profile in the test channel down a few degrees over the 765 mm heating length of the electrical rod.These experimental campaigns were necessary to qualify the overall behaviour of CALIPSO and to characterize the main components. Most of the results are consistent with the expected values. The objective of reducing the thermal gradient in the flowing NaK along the sample zone has been achieved. Therefore, it confirms the adequate design of CALIPSO to perform irradiation of material samples with an accurate control of the coolant temperature conditions over a large range of heating power.

Published
2016

4. Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation

Author

Privat, A., Touboul, Antoine, Arinero, R., Wrobel, Frédéric, Saigné, F., Vaillé, J.-R., Bourdarie, S., Chatry, N., Chaumont, G., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), ONERA - The French Aerospace Lab [Toulouse], ONERA, TRAD [Labège], TRAD, and STMicroelectronics

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2013

5. Impact of Single Event Gate Rupture and latent defects on Power MOSFETs switching operation

Author

Privat, A., Touboul, Antoine, Petit, M., Huselstein, J., Wrobel, Frédéric, Vaillé, J.-R., Bourdarie, S., Arinero, R., Chatry, N., Chaumont, G., Lorfèvre, E., Saigné, F., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Supélec Sciences des Systèmes (E3S), Ecole Supérieure d'Electricité - SUPELEC (FRANCE), Groupe énergie et matériaux (GEM), ONERA - The French Aerospace Lab [Toulouse], ONERA, Composants à Nanostructure pour le moyen infrarouge (NANOMIR), TRAD [Labège], TRAD, STMicroelectronics, Centre National d'Études Spatiales [Toulouse] (CNES), and Eric, Dauverchain

Subjects
[SPI.TRON] Engineering Sciences [physics]/Electronics, ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2013

6. Non-ionizing energy loss: an additional wear-out mechanism in latent reliability degradation

Author

Naceur, M., Privat, A., Touboul, Antoine, Vaillé, J.-R., Lorfèvre, E., Bezerra, F., Chaumont, G., Chatry, N., Chatry, C., Saigné, Frédéric, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre National d'Études Spatiales [Toulouse] (CNES), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), STMicroelectronics, Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2012

7. Velocity effect on heavy ion-induced gate oxide latent defects

Author

Touboul, Antoine, Portier, M., Arinero, R., Chaumont, G., Saigné, Frédéric, Wrobel, Frédéric, Guasch, C., Miller, F., Boch, J., Schrimpf, R., Lorfèvre, E., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Kastler Brossel (LKB (Lhomond)), Université Pierre et Marie Curie - Paris 6 (UPMC)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Composants à Nanostructure pour le moyen infrarouge (NANOMIR), STMicroelectronics, EADS, Corporate Research Center, EADS Paris, Vanderbilt University [Nashville], Centre National d'Études Spatiales [Toulouse] (CNES), Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS-PSL), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS-PSL), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
ComputingMilieux_MISCELLANEOUS, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract

International audience

Published
2010

11. Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

Author

Ferlet-Cavrois, V., primary, Binois, C., additional, Carvalho, A., additional, Ikeda, N., additional, Inoue, M., additional, Eisener, B., additional, Gamerith, S., additional, Chaumont, G., additional, Pintacuda, F., additional, Javanainen, A., additional, Schwank, J. R., additional, Shaneyfelt, M. R., additional, Lauenstein, J-M, additional, Ladbury, R. L., additional, Muschitiello, M., additional, Poivey, C., additional, and Mohammadzadeh, A., additional

Published
2012
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13. Extended Temperature (−40/+90°C) Ultra Low Power Consumption with High Average Output Power (>+3 dBm) 1.55μm TOSA Module for up to 11.3 Gb/s 100 km Dispersion Compensation Free Transmission Metro Applications

Author

Burie, J.-R., primary, Bougueroua, K., additional, Chaumont, G., additional, Fabre, R., additional, Fabre, S., additional, Laruelle, F., additional, Goudard, J.-L., additional, Grard, E., additional, Pagnod-Rossiaux, P., additional, Paris, B., additional, Richard, D., additional, Rodrigues, V., additional, Starck, C., additional, and Wolkowicz, P., additional

Published
2012
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15. Charge Collection in Power MOSFETs for SEB Characterisation—Evidence of Energy Effects

Author

Ferlet-Cavrois, V., primary, Sturesson, F., additional, Zadeh, A., additional, Santin, G., additional, Truscott, P., additional, Poivey, C., additional, Schwank, J. R., additional, Peyre, D., additional, Binois, C., additional, Beutier, T., additional, Luu, A., additional, Poizat, M., additional, Chaumont, G., additional, Harboe-Srensen, R., additional, Bezerra, F., additional, and Ecoffet, R., additional

Published
2010
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20. Next-Day Discharge After Transcatheter Aortic Valve Implantation With the ACURATE neo/neo2 Self-Expanding Aortic Bioprosthesis.

Author

Ordoñez S, Chu MWA, Diamantouros P, Valdis M, Chaumont G, Vila RCB, Teefy P, and Bagur R

Subjects
Humans, Female, Male, Aged, 80 and over, Prospective Studies, Patient Readmission statistics & numerical data, Prosthesis Design, Aged, Postoperative Complications epidemiology, Time Factors, Aortic Valve surgery, Transcatheter Aortic Valve Replacement methods, Bioprosthesis, Aortic Valve Stenosis surgery, Patient Discharge, Heart Valve Prosthesis
Abstract

Previous studies have shown the safety of early discharge pathways in selected patients and using selected transcatheter heart valves. Hence, we sought to evaluate the safety of next-day discharge (NDD) in patients who underwent transfemoral transcatheter aortic valve implantation (TF-TAVI) with the ACURATE neo/neo2 (Boston Scientific, Marlborough, Massachusetts) self-expanding aortic bioprosthesis. Patients who underwent TF-TAVI between January 2018 and April 2023 were prospectively included. Patients were stratified into 3 groups according to discharge times within 24 hours (NDD), between 24 and 48 hours, and those discharged >48 hours after TAVI. The primary outcome was the first unplanned readmission at 30 days after TAVI. Log-rank test was used to assess the differences in the outcome of interest between the groups. A total of 368 all-comers were included in this study. According to discharge times, 204 patients followed NDD, 69 patients 24 to 48 hours discharge, and 95 patients >48 hours discharge after TAVI. The mean age was 84 ± 6.3 years and 61% were women, without differences between the groups. The mean Society of Thoracic Surgeons score was lower in those with NDD versus 24 to 48 hours and >48 hours (2.9 ± 1.0, 3.2 ± 1.2, and 3.4 ± 1.4, respectively, p = 0.014). There were no differences between the groups in terms of preprocedural right bundle branch block or pacemaker. The need for new permanent pacemaker implantation was the leading postprocedural complication; it occurred more frequently in the >48 hours group than the 24 to 48 hours, and <24 hours groups (24% vs 8.6% and 2.2%, p <0.001). There were 5 strokes (1.4%) and all of them occurred in the >48 hours group (p = 0.005). At 30 days after discharge, there were no deaths and no differences in all-cause readmissions (9.3% in <24 hours, 8.6% in 24 to 48 hours, and 19% in >48 hours, log-rank p = 0.087). The readmission rates for new permanent pacemaker implantation requirement were 3.3% (n = 6) in NDD, 0% in 24 to 48 hours, and 1.6% (n = 5) in the >48 hours groups (p = 0.27). In conclusion, in unselected patients who underwent TF-TAVI with the ACURATE neo/neo2 self-expanding bioprosthesis, the NDD pathway is feasible and appears to be safe, without an increased risk of death or all-cause rehospitalization through 30 days after hospital discharge., Competing Interests: Declaration of competing interest Dr. Chu has received speaker's honoraria from Medtronic, Edwards Lifesciences, Terumo Aortic, and Artivion Inc. Dr. Diamantouros is a proctor for Boston Scientific. Dr. Bagur is a consultant for Medtronic. The remaining authors have no competing interest to declare., (Copyright © 2024 The Authors. Published by Elsevier Inc. All rights reserved.)

Published
2024
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22. [Working in a specialized halfway house with handicapped persons].

Author

Chaumont G, Derni C, and Morel P

Subjects
Activities of Daily Living, Communication, Facility Design and Construction, France, Health Promotion, Humans, Disabled Persons rehabilitation, Halfway Houses organization & administration, Nurse's Role
Published
2010

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