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The current work proposes a novel scheme for developing a light-activated non-filamentary memristor device by fabricating an Au-nanoparticle embedded HfO$_2$-bilayer/p-Si MOS structure. Under illumination, the electrons in such embedded Au-nanoparticles are excited from d-level to quantized s-p level and are swept out on application of an appropriate gate bias, leaving behind the holes without recombination. Such photogenerated holes are confined within the nanoparticles and thus screen the external field to lead to a memristive effect in the device. The phenomenon is experimentally observed in the fabricated Pt/HfO$_2$-(layer-II)/Au-NPs/HfO$_2$-(layer-I)/p-Si devices, where such memristive effect is activated/deactivated by light pulses. The memory window and high-to-low resistance ratio of the device are obtained to be ~1 V and ~10, respectively, which suggest the performance of a standard state-of-the-art memristor. Further, the present device offers a voltage-sweep-endurance up to at least 150 cycles and the memory retention up to ~10,000 s. Such a device concept can be extended for a combination of different nanoparticles with various dimensions and dielectric layers to optimize their memristive effect for achieving CMOS-compatible memory devices with superior reliability.

The current work explores a geometrically engineered dual gate GaAs nanowire FET with state of the art miniaturized dimensions for high performance charge qubit operation at room temperature. Relevant gate voltages in such device can create two voltage tunable quantum dots (VTQDs) underneath the gates, as well as can manipulate their eigenstate detuning and the inter-dot coupling to generate superposition, whereas a small drain bias may cause its collapse leading to qubit read out. Such qubit operations, i.e., Initialization, Manipulation, and Measurement, are theoretically modeled in the present work by developing a second quantization filed operator based Schrodinger-Poisson self-consistent framework coupled to non-equilibrium Greens function formalism. The study shows that the Bloch sphere coverage can be discretized along polar and azimuthal directions by reducing the nanowire diameter and increasing the inter-dot separation respectively, that can be utilized for selective information encoding. The theoretically obtained stability diagrams suggest that downscaled nanowire diameter and increased gate separation sharpen the bonding and anti-bonding states with reduced anticrossing leading to a gradual transformation of the hyperbolic current mapping into a pair of straight lines. However, the dephasing time in the proposed GaAs VTQD-based qubit may be significantly improved by scaling down both the nanowire diameter and gate separation. Therefore, the present study suggests an optimization window for geometrical engineering of a dual gate nanowire FET qubit to achieve superior qubit performance. Most importantly, such device is compatible with the mainstream CMOS technology and can be utilized for large scale implementation by little modification of the state of the art fabrication processes.

The current work investigates the performance of dual-gate GaAs-nanowire FET as a charge-qubit device operating at room temperature. In compatibility with the state-of-the-art classical bit technology, it is shown that the single gate of a nanowire FET can be replaced by two localized gates to achieve such charge-qubit operation. On application of relevant biases to the localized gates, two voltage tunable quantum dots are created within the nanowire channel with electrostatically controlled single-state-occupancy and inter-dot coupling leading to charge-qubit operation at room temperature. The associated electron transport is theoretically modeled on the basis of non-equilibrium Green s function (NEGF) formalism. The initialization and manipulation for qubit operation are performed by applying suitable gate voltages, whereas the measurement is executed by applying a small drain bias to obtain a pulse current of ~pA order. A ~25 MHz frequency of coherent oscillation is observed for the qubit and a characteristic decay time of ~ 70 ns is achieved. The results suggest that such dual gate nanowire FET is a promising architecture for charge-qubit operation at room temperature.

Semiconductor quantum dots (QDs) are being regarded as the primary unit for a wide range of advanced and emerging technologies including electronics, optoelectronics, photovoltaics and biosensing applications as well as the domain of q-bits based quantum information processing. Such QDs are suitable for several novel device applications for their unique property of confining carriers 3-dimensionally creating discrete quantum states. However, the realization of such QDs in practice exhibits serious challenge regarding their fabrication in array with desired scalability and repeatability as well as control over the quantum states at room temperature. In this context, the current work reports the fabrication of an array of highly scaled Ge-nanowire (radius ~25 nm) based vertical metal-oxide-semiconductor devices that can operate as voltage tunable quantum dots at room temperature. The electrons in such nanowire experience a geometrical confinement in the radial direction, whereas, they can be confined axially by tuning the applied bias in order to manipulate the quantum states. Such quantum confinement of electrons has been confirmed from the step-like responses in the room temperature capacitance-voltage (C-V) characteristics at relatively low frequency (200 kHz). Each of such steps has observed to encompass convolution of the quantized states occupying ~6 electronic charges. The details of such carrier confinement are analyzed in the current work by theoretically modeling the device transport properties based on non-equilibrium Green's function (NEGF) formalism.

The present work theoretically investigates the probability of generation of entangled electron-photon pair in high-energy Compton scattering of unpolarized electrons and photons due to scattering-channel-exchange mechanism. The study suggests that the scattering of unpolarized electrons and photons with nearly equal energy of the order of MeV at cross-channel can create entangled pair of up-spin electron and RCP photon or down-spin electron and LCP photon. The entanglement is quite strong exhibiting jump-concurrence for particular directions of scattering however not limited by the Kapitza-Dirac restriction. Such strong electron-photon entanglement is observed to be highly selective along the directions of scattering on the surface of two opposite cones at 45 degree around the electron-detector axis and on the plane perpendicular to it, the latter one exhibiting maximal entanglement. The work predicts that spin-polarization entangled electron-photon pairs are highly possible to be found in practical experiments of high-energy Compton scattering with specific directional selectivity.