1. Effects of Oxygen Vacancies and Cation Valence States on the Triboelectric Property of Substoichiometric Oxide Films
- Author
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Wenchao Gao, Yongqiao Zhu, Zhong Lin Wang, Miao Zhang, Cheng Xu, Shiquan Lin, Chaogui Yang, and Peizhong Feng
- Subjects
Kelvin probe force microscope ,Materials science ,Valence (chemistry) ,Annealing (metallurgy) ,Reducing atmosphere ,Oxide ,chemistry.chemical_element ,Oxygen ,chemistry.chemical_compound ,chemistry ,Chemical physics ,General Materials Science ,Triboelectric effect ,Surface states - Abstract
Temperature effects on the contact electrification (CE) is of great interest. Here, different kinds of substoichiometric oxide films, such as TiO2-x, Al2O3-x, Ta2O5-x, and Cr2O3-x, are deposited and annealed at different temperatures, and the CE between the films and a Pt-coated tip is performed by using Kelvin probe force microscopy (KPFM). An intriguing finding is that the polarity on the TiO2-x surface changes from negative to positive with the increase of the sample annealing temperature in air atmosphere. Such a result is attributed to the fact that annealing under an oxidative atmosphere repairs oxygen vacancies and helps upgrade the low valency of Ti3+ to a stable high valency of Ti4+. On the contrary, after annealing occurs in an Ar/H2 atmosphere, the polarity on the TiO2-x surface reverses from positive to negative. This is mainly due to the increase of oxygen vacancies after annealing in reducing atmosphere. Through the KPFM results of Al2O3-x, Ta2O5-x, and Cr2O3-x films, the effect of oxygen vacancies is further confirmed, that is, the decrease of oxygen vacancies eases the films at capturing positive charges. Based on this, TiO2-x-based identical material triboelectric nanogenerators (IM-TENGs) are designed and prepared for the first time to control the current direction. Moreover, a surface state model for explaining the CE mechanism between the metal and annealed dielectric is proposed. This study is conducive to the development of the IM-TENGs which regulate the current direction or voltage output accurately in the future and also provides a further understanding of the dominant mechanism of electron transfer in the CE.
- Published
- 2021