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Whereas the interpersonal theory of suicide entails the assumption that thwarted belongingness and perceived burdensomeness are equally important, mutually moderating, proximal causes of active ideation, evidence suggests these may not be co-moderating processes. We tested an alternative perspective, hypothesizing that burden mediates the longitudinal relationship of thwarted belonging with active ideation.A 6-week, four-wave prospective online survey was completed by 298 undergraduates. We tested cross-sectional and cross-lagged panel models (CLPM, with and without random effects) with belonging, burden, and ideation at 2-week lags, and post hoc models with burden as a concurrent mediator of ideation.Approximately 28% of undergraduates reported active ideation at baseline. Cross-sectionally, thwarted belonging had no direct influence on ideation but indirectly affected ideation via burden. This result was not confirmed in the 2-week CLPM analyses. In post hoc analyses, we found belonging operated indirectly via later burden to influence contemporaneous ideation.Findings suggest thwarted belonging influences active ideation indirectly via perceived burden. The effect of burden as a mediator appears to depend on its temporal proximity to ideation. Future research should delimit the period during which perceived burden is an active mediator, accommodate dual-process approaches, and explore other mediation alternatives to co-moderation.

A radio-frequency magnetron sputter was used to deposit a 60 nm TiO[Formula: see text] film on a W-coated Si substrate at room temperature. Subsequently, a 100 nm Ni film was deposited using a thermal evaporator to form a Ni/TiO[Formula: see text]/W structure. Numerous oxygen vacancies and defects were present in the TiO[Formula: see text] film. The current–voltage characteristics indicate that Schottky emission dominated the conduction mechanism of the Ni/TiO[Formula: see text]/W structure. Because of Schottky barrier modulation, analog resistive switching of the Ni/TiO[Formula: see text]/W structure can be performed using consecutive voltage sweepings or voltage pulses. Various pulse waveforms were used to demonstrate synaptic potentiation and depression.

This study determines the relationship between retention and endurance reliability for a HfOx-based resistive random access memory (ReRAM). A TiN (15 nm) / HfOx (6 nm) / Ti (10 nm) / TiN (40 nm) stacked structure is fabricated and tested to verify its basic characteristics and reliability. The high resistance states (HRS) retention behavior is characterized and is found to degrade over 100x on the endured bits because there is a sequential high temperature procedure. The degradation is reduced slightly to a ~30x drop for the endured devices with one single refresh cycle. During the endurance and retention test procedures, the HRS resistance decreases because neutral oxygen vacancy filaments grow and this cannot be reversed. The I-V characteristics for endured devices are also determined. The results show that isothermal treatment causes a gradual SET and RESET process with multiple feasible states. The thermally induced filament degradation model (isolated filament vs. continuous filament) is verified by the relationship between retention and endurance reliability. Design guidance is recommended for an improvement in ReRAM reliability.

A SET-state conductance change in a hafnium-oxide resistive switching memory cell due to repeated read events is investigated. We characterize a read-induced conductance change at different read voltages and SET-state conductance levels. Our result shows that the read-induced conductance degradation exhibits a two-stage evolution with the read pulse number. A SET-state conductance decreases slightly in the first stage and then follows inverse power-law dependence on the read number in the second stage. The power factor is an exponential function of a read voltage without regard to the SET-state conductance level, and the read pulse number at the transition of the two stages is related to a read voltage and conductance level. An analytical model to describe the two-stage conductance evolution is proposed. The parameters in the model are extracted from measurement data. Our model is verified by good agreement between the modeled and measured results in a wide range of read pulse number, read voltage, and SET-state conductance level.

The advanced supercritical fluid (SCF) technique was applied to reduce defects in the amorphous silicon thin-film layer and enhance the efficiency of a heterojunction (HJT) solar cell from 18.1% to 19.6%. An amorphous silicon thin-film layer has been used as a passivation layer between the substrate and electrode contact in HJT solar cells; however, many dangling bonds exist in the amorphous silicon thin-film layer. Therefore, the SCF technique was developed to passivate defects. The advantage of a supercritical state is high penetrability and low temperature. Thus, this SCF treatment can passivate defects in the completed device without changing the original fabrication process. After treatment, the passivation of dangling bonds was examined using Fourier-transform infrared spectroscopy, which confirmed the improved Si–H bonding. Moreover, electrical properties such as open-circuit voltage, short-circuit density, efficiency, shunt resistance, and leakage current were measured to confirm the enhancement. A simulated light source of 1 kW M−2 global AM1.5 spectrum was used to analyze the increase in cell efficiency, and the dark current was analyzed to confirm the leakage current improvement. Finally, a model for explaining the phenomenon in cells after treatment was developed.

The dual functions in HfOx-based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 h without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.

The sneak path current (SPC) is the inevitable issue in crossbar memory array while implementing high-density storage configuration. The crosstalks are attracting much attention, and the read accuracy in the crossbar architecture is deteriorated by the SPC. In this work, the sneak path current problem is observed and investigated by the electrical experimental measurements in the crossbar array structure with the half-read scheme. The read margin of the selected cell is improved by the bilayer stacked structure, and the sneak path current is reduced ~20% in the bilayer structure. The voltage-read stress-induced read margin degradation has also been investigated, and less voltage stress degradation is showed in bilayer structure due to the intrinsic nonlinearity. The oxide-based bilayer stacked resistive random access memory (RRAM) is presented to offer immunity toward sneak path currents in high-density memory integrations when implementing the future high-density storage and in-memory computing applications.

For the first time, ultrafast laser annealed BEOL gate-all-around (GAA) transistor and FeFET memory were demonstrated with monolithic 3D near-memory-computing (NMC) circuit. The GAA MOSFETs employing ultrafast picosecond visible laser dopant activation exhibit record-high Ion (nFETs=407 uA/um, pFETs=345 uA/um). The BEOL FeFETs memory exhibits large memory window ΔV th = 1.2V, more than 106 cycle endurance. Moreover, the 3D stackability of the GAA MOSFETs and FeFET memory bit cell enable reduces the area of the NMC circuitry and improve the readout throughput.

We describe a prototype of the virtual reality remote classroom participation system called UniVResity. UniVResity mirrors in virtual reality the ongoing face-to-face classroom activities, taking into account potentially low bandwidth data connection and lack of VR equipment in class. Our system attempts to combine the benefits of online education and face-to-face education, and makes face-to-face learning more accessible.

Selectorless graphite-based resistive random-access memory (RRAM) has been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without an additional selector or transistor for low-power RRAM array application. The low effective dielectric constant value (k) layer of graphite or graphite oxide is utilized, which is beneficial in suppressing sneak-path currents in the crossbar RRAM array. The tail-bits with low nonlinearity can be manipulated by the positive voltage pulse, which in turn can alleviate variability and reliability issues. Our results provide additional insights for built-in nonlinearity in 1R-only selectorless RRAMs, which are applicable to the low-power memory array, ultrahigh density storage, and in-memory neuromorphic computational configurations.

Ga-doped ZnO (GZO)/metal/GZO structures were fabricated on glass substrates to be the transparent conducting layers in this study. GZO films and metal films were deposited at room-temperature by a radio-frequency sputter and a thermal evaporator, respectively. The GZO/Ag/GZO (GAG) structures had poor electrical and optical properties due to the formation of Ag islands on the GZO layer. A 1-nm Cu seed layer was deposited on the GZO layer to fabricate the GZO/Ag/Cu/GZO (GACG) structure to improve its electrical and optical properties. The GACG structure had sheet resistance of 9 [Formula: see text], average visible transmittance of 86% and figure of merit of [Formula: see text] [Formula: see text]. In addition, the sheet resistance of the GACG structure kept almost the same after annealing at [Formula: see text]C in atmosphere for more than 5 h, which showed good thermal stability.

ObjectiveThe present study analysed data derived from the 2004–2008 Nutrition and Health Survey in Taiwan, conducted by the Ministry of Health and Welfare, to understand the relationship among eating-out behaviour, related non-nutritional factors and osteopenia in the Taiwanese population.Design/Setting/SubjectsData of 1140 adults who had been evaluated with dual-energy X-ray absorptiometry in June 2007 were included. The data were analysed through descriptive and inferential statistics to determine the association of osteopenia with the frequency of eating out, demographic variables (i.e. age, sex, level of education, marital status and place of birth), BMI, waist circumference and food consumption.ResultsGender, age, education level, personal income and waist circumference were all factors found to be significantly associated with eating-out frequency and the incidence of osteopenia. Eating-out frequency was negatively associated with the incidence of osteopenia. Individuals with BMI>27 kg/m2had a lower frequency of eating out and a lower incidence of osteopenia. Individuals with a lower monthly income had a significantly greater chance of developing osteopenia. Men living without spouses had significantly higher chances of osteopenia. Ca intake was negatively associated with breakfast eating-out frequency.ConclusionsEating-out frequency was not associated with an increasing incidence of osteopenia, but affected the Ca intake in the Taiwanese population. Having a balanced selection of food is crucial to reduce the incidence of osteopenia. Improving nutritional knowledge for those under higher risk of osteopenia is necessary to prevent osteopenia and Ca deficiency.

Patients with social anxiety disorder (SAD) have a cognitive preference to negatively evaluate emotional information. In particular, the preferential biases in prosodic emotion recognition in SAD have been much less explored. The present study aims to investigate whether SAD patients retain negative evaluation biases across visual and auditory modalities when given sufficient response time to recognise emotions.Thirty-one SAD patients and 31 age- and gender-matched healthy participants completed a culturally suitable non-verbal emotion recognition task and received clinical assessments for social anxiety and depressive symptoms. A repeated measures analysis of variance was conducted to examine group differences in emotion recognition.Compared to healthy participants, SAD patients were significantly less accurate at recognising facial and prosodic emotions, and spent more time on emotion recognition. The differences were mainly driven by the lower accuracy and longer reaction times for recognising fearful emotions in SAD patients. Within the SAD patients, lower accuracy of sad face recognition was associated with higher severity of depressive and social anxiety symptoms, particularly with avoidance symptoms.These findings may represent a cross-modality pattern of avoidance in the later stage of identifying negative emotions in SAD. This pattern may be linked to clinical symptom severity.

Resistive random access memory (RRAM) is a leading candidate in the race towards emerging nonvolatile memory technologies. The sneak path current (SPC) problem is one of the main difficulties in crossbar memory configurations. RRAM devices with desirable properties such as a selectorless, 1R-only architecture with self-rectifying behavior are potential SPC solutions. In this work, the intrinsic nonlinear (NL) characteristics and relaxation characteristics of bilayer high-k/low-k stacked RRAMs are presented. The intrinsic nonlinearity reliability of bilayer selectorless 1R-only RRAM without additional switches has been studied for their ability to effectively suppress SPC in RRAM arrays. The relaxation properties with resistive switching identification method by utilizing the activation energy (Ea) extraction methodology is demonstrated, which provides insights and design guidance for non-uniform bilayer selectorless 1R-only RRAM array applications.

A Cu/SiO2/Pt structure is usually used to study the resistive memory properties of an electrochemical resistive random access memory. It can be reversibly switched between low- and high-resistance states by using DC voltages in the atmosphere. However, its resistive switching behavior disappears in a vaporless environment because no conducting filaments can be formed within the Cu/SiO2/Pt structure. This study inserted a graphene oxide (GO) layer to fabricate a Cu/GO/SiO2/Pt structure that could be resistively switched in a vaporless environment. The X-ray photoelectron spectra depth profile of the Cu/GO/SiO2/Pt structure showed that oxygen-related groups of the GO film reacted with the Cu electrode. The GO film assisted Cu ionization in a vaporless environment, and Cu ions could migrate in an electrical field to the Pt electrode. Cu conducting filaments were formed and ruptured by different polarity voltages, and the resistance of the Cu/GO/SiO2/Pt structure could be reversibly switched in a vaporless environment. A schematic model was proposed to explain the switching mechanisms in the atmosphere and a vaporless environment.

In this work, SiCxNy-based resistive switching memory by using a single precursor for the back end of line (BEOL) integration has been investigated. SiCxNy films were deposited on the aluminum (Al) substrates using plasma enhanced atomic layer deposition (PEALD) method. The effects of SiCxNy chemical structure with respect to resistive switching characteristics have been studied, and the results suggest that the resistive switching mechanism is dominated by the interfacial Schottky junction with SiCxNy composition. This work not only demonstrates a PEALD method in fabricating SiCxNy-based electronics active devices but also provides additional insights into the interaction between the electrical and chemical structures in bi-functional resistive switching or threshold switching behavior. A demonstrated PEALD tool with simple single-precursor for SiCxNy deposition shows excellent feasibility to be used as functional memory and selector devices, further giving the potential pathway for advanced BEOL process integration.

A low-cost, highly reflective, liquid organic nanostructure silver conductor with superior conductivity, using back contact reflectors in amorphous silicon (a-Si) single-junction superstrate configuration thin-film solar cells produced using a non-vacuum screen printing process is proposed. The conductive paste is composed of Ag nanowires (Ag NWs) mixed with an Ag nanostructure (Ag NS) sheet. The paste is referred to as ‘Ag NWS’. A comparison of silver conductor samples with vacuum-system-sputtered silver samples indicated that the short-circuit current density (J sc) and the open-circuit voltage (V oc) of Ag NWS conductor cells exceeded 0.22 mA/cm2 and 66 mV, respectively. The Ag NWS conductor with back contact reflectors in solar cells was analysed using external quantum efficiency measurements to effectively enhance light-trapping ability in a long wavelength region (580–700 nm). The cells constructed using the optimised Ag NWS demonstrated an increase of approximately 6.1% in power conversion efficiency under AM 1.5 illumination. These results indicated that the Ag NWS conductor back contact reflector layer is a suitable candidate for high-performance a-Si thin-film solar cells.

Objective This study examined the psychometric properties of the Internet and paper-and-pencil versions of the Mandarin Chinese version of the Night Eating Questionnaire (C-NEQ) and compared these measures' validity. Method The C-NEQ was evaluated through two different media: 626 participants completed the C-NEQ on the Internet and 160 participants completed the paper-form C-NEQ at the psychiatric outpatient clinics. A subgroup completed both versions of the C-NEQ ( n =50). The Night Eating Syndrome History and Inventory was used to identify individuals with night eating syndrome (NES). Results The paper-and-pencil and Internet versions of the C-NEQ both showed good internal consistency, reliability, and concurrent validity. Reliability between the Internet and the paper-and-pencil versions of the C-NEQ was excellent (ICC=.96). Diagnostic analysis of the C-NEQ's performance using the Receiver Operation Curve method showed excellent results in both versions; the area under the curve did not differ significantly between the versions. Regarding detecting NES, the Internet version had a higher optimal cutoff point than the paper-and-pencil version (23 and 22, respectively). Conclusions The Internet and paper-and-pencil versions of the C-NEQ both showed strong reliability and validity; however the two versions appear to differ marginally regarding usage in NES detection.

In this work, the nonlinear (NL) characteristics of bi-layer high-k/low-k dielectrics structure, i.e. high-k layer with the low-k layer, are for selectorless oxide-based resistive random-access memories (RRAM) memory array application. It has been shown that such structure enhances the read currents at full read voltage (∼10-3 A) as compared to the bi-layer low-k/low-k structure (∼10-4 A), reduces low-voltage current, increases I-V nonlinearity and thereby suppresses the sneak path currents in the selectorless RRAM. Improved seasoning effect has also been demonstrated using the bilayer dielectric structure. The Fowler-Nordheim tunneling behavior has been found in the first RESET process (-0.45 to -1.25 V) as followed by the high self-rectifying characteristics that enlarge the immunity to the sneak path current and reduce the read errors in the array applications. The breakdown controllability of the forming process dominates the followed seasoning cycles which leads to two different performances in bilayer stacks i.e. efficient seasoning and inefficient seasoning, which provides an intrinsic design of selectorless RRAM devices. The device characteristics with current transport mechanisms have also been investigated. Our results provide additional insights into ways to achieve high performance and excellent reliability of built-in nonlinearity in selectorless RRAM (NL > 120, memory window > 100, sub-μs switching speed, and NL retention) for the future low-power RRAM memory array configurations.

This paper demonstrates the growth of highly-textured boron-doped ZnO (ZnO:B) film by using low-pressure chemical-vapor-deposition (LPCVD) for efficient light harvesting and carrier collection in heterojunction silicon-based (HJS) solar cells. The optical and electrical characteristics have been optimized versus the substrate temperature and B2H6 flow rate for tradeoffs among the sheet resistance, free-carrier absorption, and optical transmission of blue/green wavelengths. A HJS solar cell with a 1.6-μm-thick ZnO:B film achieves a high power conversion efficiency of 16.30% and fill factor of 78.05%, compared to 15.64% and 72.17%, respectively, from a counterpart with a conventional 80-nm-thick indium tin oxide layer.

The influence of minority carrier lifetime on heterojunction back contact (HBC) silicon solar cell is studied. The cell was fabricated with different width ratios of P-electrode to N-electrode (P/N ratio). It is found that the optimized efficiency was obtained at a P/N ratio of 1. The thickness of passivation layer was investigated to achieve an efficiency of 18.4% which is the trade-off between open circuit voltage and fill factor.

Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 °C, and separated well at 600 °C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 °C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 °C annealing. The electrical characteristics of data retention in the sample with the 600 °C annealing exhibited better performance than the 500 °C-annealed sample, a result associated with the better separation and better crystallization of the NC structures.

Patients with social phobia commonly resist face-to-face assessments, and a number of alternative assessment methods based on the Internet are being developed. The aim of this study was to identify patients with social phobia on the Internet and characterize their condition, using the Social Phobia Inventory (SPIN). In Stage I, this study recruited 1307 participants from the Internet, most of whom were well-educated young females, who had remained unmarried and unemployed. The Internet-based SPIN demonstrated excellent internal consistency (Cronbach's α = 0.937) and good test-retest reliability (intraclass correlation coefficient = 0.942). In Stage II, we examined the discriminant validity of the SPIN via structured telephone interviews. The area under the receiver operating characteristic curve used to discriminate social phobia was 0.871 with an optimal cut-off point of 24 on the total score for the SPIN. According to the SPIN scores, 919 of Stage I participants (70.3%) reached the threshold of social phobia, 531 of which (57.8%) had never sought professional help. These results suggest that the Internet is a potential avenue through which to find untreated patients with social phobia.

In this study, ZrO2 formed by the nitric acid oxidation method is proposed to be the tunneling oxide for nonvolatile memory device applications. The sputtered Zr thin film was oxidized by immersing in the nitric acid solution (HNO3:H2O = 1:10) for 60 s at room temperature. The quality of the formed ZrO2 was also extracted by the capacitance-voltage and current density-voltage measurements. Then, X-ray photoelectron spectroscopy has been used to confirm that the deposited Zr can be oxidized completely after the oxidation process. Moreover, a CoSi2 thin film was deposited on the nitric acid oxidized ZrO2 as the self-assembled layer of the memory device. After the device fabrication, the electrical and material characteristics of the CoSi2 nanocrystal memory devices have also been demonstrated and discussed.

In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeO x layer in the TiN/SiO 2 /FeO x /FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeO x transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO 2 /FeO x /FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions.

In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N 2 and O 2 ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi 2 and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance–voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N 2 ambient has smaller memory window and better retention characteristics than in O 2 ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory.

Antipsychotics-induced tardive dyskinesia (TD) has been suggested to be related to altered dopaminergic neurotransmission in the striatum. Melatonin has a modulating effect on dopaminergic neurotransmission in the brain; therefore, the hypothesis of an association between the melatonin receptor genes (MTNR1A, MTNR1B) and antipsychotics-induced TD was examined in this study.Schizophrenic inpatients receiving long-term antipsychotic treatment were assessed using the Abnormal Involuntary Movement Scale, and only patients who were either free of any abnormal involuntary movement (non-TD group) or who demonstrated persistent TD (TD group) were enrolled. Genotyping of six tagging single nucleus polymorphisms (SNPs) in the melatonin receptor genes (MRNR1A, MTNR1B) was then performed for each subject.Four hundred and eighteen inpatients (TD=256, non-TD=162) fitted the study criteria and underwent TD assessment and genotyping. Individual haplotype analysis showed that the haplotype ATG was significantly associated with non-TD (permutation P=0.037), and the association was also found to be significant by global haplotype analyses (permutation P=0.045).Our results indicated a significant association between the haplotype ATG in the MTNR1A gene and non-TD. Further replication in other countries or other populations is indicated.

Objective The aim of the study was to investigate the association between genetic variation in the tumor necrosis factor-alpha (TNF-alpha) gene and longitudinal weight change during long-term clozapine treatment. Methods Fifty-five patients with refractory schizophrenia treated with clozapine for 8 years were recruited. Gender, age, treatment response to clozapine in the first 14 months, baseline BMI, clozapine dose, concomitant use of mood stabilizers and other antipsychotics, and -308 G > A polymorphism in the human TNF-alpha gene were analyzed using generalized estimating equations. Results In addition to having a lower baseline BMI (p = 0.0013) and a longer treatment time (p = 0.050), the -308 GG carriers gained significantly more weight than the -308 A allele carriers (p = 0.0084) during 8 years of clozapine treatment, after controlling for other non-genetic factors. Conclusions The -308 G > A genetic variant of the TNF-alpha gene is associated with longitudinal weight change during clozapine treatment. Follow-up duration is an important factor to consider when performing pharmacogenetic study of clozapine-induced weight gain.