98 results on '"Chantre, Alain"'
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2. Novel total dose and heavy-ion charge collection phenomena in a new SiGe HBT on thin-film SOI technology
3. Electrical behavior and technology optimization of Si/SiGeC HBTs on thin-film SOI
4. Industry Examples at the State-of-the-Art
5. 3-D Regional Transit Time Analysis of SiGe HBTs on Thin-Film SOI
6. fMAX Increase to 500 GHz of SiGe HBTs at Low Temperature
7. A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters
8. Hot-carrier degradation and oxide charge build-up in self-aligned etched-polysilicon npn bipolar transistors
9. A 30-GHz fT quasi-self-aligned single-poly bipolar technology
10. Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology
11. Transit times of SiGe:C HBTs using nonselective base epitaxy
12. Influence of impact-ionization-induced base current reversal on bipolar transistor parameters
13. Analysis and minimization of small-geometry effects on the current gain of self-aligned 'etched-polysilicon' emitter bipolar transistors
14. Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics
15. Monolithic integration of hybrid III-V/Si lasers and Si-based modulators for data transmission up to 25Gbps
16. Co-integrated 13µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s
17. O-Band III–V-on-Amorphous-Silicon Lasers Integrated With a Surface Grating Coupler
18. Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics
19. Power-efficient carrier-depletion SOI Mach-Zehnder modulators for 4x25Gbit/s operation in the O-band
20. Behavior and optimizations of Si/SiGe HBT on thin-film SOI
21. Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology
22. A Study of SiGe HBT Signal Sources in the 220–330-GHz Range
23. Characterization of mutual heating inside a SiGe ring oscillator
24. Monolithic integration of hybrid III-V/Si lasers and Si-based modulators for data transmission up to 25Gbps
25. Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part I: Vertical Scaling
26. Physical and Electrical Performance Limits of High-Speed Si GeC HBTs—Part II: Lateral Scaling
27. Characterization of the Noise Parameters of SiGe HBTs in the 70–170-GHz Range
28. Influence of the Selectively Implanted Collector Integration on +400 GHz fMAX Si/SiGe:C HBTs
29. 0.13 $\mu$m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications
30. Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on >Thin-Film SOI Technology
31. SiGe HBT featuring fT > 600GHz at Cryogenic Temperature
32. Will BiCMOS stay competitive for mmW applications ?
33. 165-GHz Transceiver in SiGe Technology
34. Germanium Profile, Graduality and Base Doping Level Influences in the Performance of SiGe HBT
35. A 77-79-GHz Doppler Radar Transceiver in Silicon
36. Electrostatic capacitances of high-speed SiGe HBT
37. Design and Scaling of W-Band SiGe BiCMOS VCOs
38. Advanced silicon technologies for wireless communications
39. An experimental and simulation study of pnp Si/SiGeC HBTs using box-like Ge profiles
40. The effect of carbon on neutral base recombination in high-speed SiGeC heterojunction bipolar transistors
41. Prospects for Complementary SiGeC BiCMOS on Thin-Film SOI
42. Is SOI CMOS A Promising Technology For SOCs In High Frequency Range ?
43. Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics
44. Static and Dynamic Characteristics of a 54 GHz fmax Implanted Base 0.35 µm Single-Polysilicon Bipolar Technology
45. The Design and Fabrication of 0.35 µm Single-Polysilicon Self-Aligned Bipolar Transistors
46. Power-efficient carrier-depletion SOI Mach-Zehnder modulators for 4x25Gbit/s operation in the O-band
47. Profile Tail Effects on Low Temperature Operation of Silicon Bipolar Transistors
48. Explanation of current crowding phenomena induced by impact ionization in advanced Si bipolar transistors by means of electrical measurements and light emission microscopy
49. Hot-Carrier Degradation and Oxide Charge Build-up in Self-Aligned Etched-Polysilicon npn Bipolar Transistors.
50. Explanation of Current Crowding Phenomena Induced by Impact Ionization in Advanced Si Bipolar Transistors by Means of Electrical Measurements and Light Emission Microscopy.
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