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Silicon carbide bipolar diodes were fabricated by nitrogen implantation, annealed at 1100 degrees C, passivated with a deposited oxide and characterized. The quality of the junction was analyzed using capacitance and current voltage measurements. Three peaks were observed using admittance spectroscopy, with two corresponding to nitrogen and aluminium shallow levels. The third peak was studied in depth using deep level transient spectroscopy.

The characteristics of bipolar n+pp+ diodes manufactured through nitrogen implantation and passivated with a deposited oxide were investigated. Current-voltage measurements in a broad temperature range were examined. Also, the optical beam induced current method was employed to represent the depleted zone at the surface around a reverse-biased device. Findings indicated that the presence of interface states or oxide traps induced a decrease of the current by trapping the carriers. Moreover, the presence of mobile charges induced a small increase of the current.

Boron diffusion was employed to compensate an n-type epilayer to increase the breakdown voltage of a p+nn+ structure from 120 to 760 V at room temperature. This value decreases when the temperature rises because of the decline in the compensation ratio. The activation of D centers with the temperature and therefore the increase of the free carrier concentration explains the temperature dependence of the breakdown voltage.

The concepts of state variable modeling have been applied to obtain a general circuit like model for the power PIN diode. The main aim of this paper is to demonstrate the feasibility of the state variable modeling approach for the PIN diode. From simplified semiconductor device differential equations, the model is built with the corresponding variational equation using an internal approximation. With a special choice of the decomposition functional basis of such internal approximation, it was possible to get efficient and reliable models for the reverse recovery. A simple model of three state variables that has only six parameters, most of which are technological, represented a major improvement in describing circuit/device waveforms during reverse recovery.

This brief presents a new approach for designing analog switches. based on a two-current-conveyor cell, the switching element is suitable for continuous-time applications and offers high-linearity, low-noise, and high-frequency characteristics. Parasitic resistance and capacitance are improved and a wide bandwidth is achieved compared to previous approaches of traditional commercial circuits. The major interest of this new building block is to simulate an analog switch dedicated to the implementation of analog networks. Index Terms - Analog switch, current conveyor.

Presents information on a study conducted which characterized the bipolar n+pp+ diodes grown by nitrogen implantation and passivated with a deposited oxide. Qualities of silicon carbide; Examination of mobile charges in the oxide and interface states; Methodology of the study; Results of the study.