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The coupling physics between multiple antennas separated axially along a plasma cylinder is investigated. Experiments are carried out on a recently built device: Physics ANd Thruster oriented HElicon Research (PANTHER), with an upgrade of second-stage antennas. Mutual induction currents are measured in detail. It is found that the existence of plasma column going through these antennas increase the coupling effects among them significantly. Theoretical analyses from the perspectives of transformer and magnetic permeability and moment confirm the reasonability of this phenomenon. This work is of particular interest for electrodeless plasma source or thruster which employs multiple antennas for ionisation and acceleration.

Many properties of layered materials change as they are thinned from their bulk forms down to single layers, with examples including indirect-to-direct band gap transition in 2H semiconducting transition metal dichalcogenides as well as thickness-dependent changes in the valence band structure in post-transition metal monochalcogenides and black phosphorus. Here, we use angle-resolved photoemission spectroscopy to study the electronic band structure of monolayer ReSe$_{2}$, a semiconductor with a distorted 1T structure and in-plane anisotropy. By changing the polarization of incoming photons, we demonstrate that for ReSe$_{2}$, in contrast to the 2H materials, the out-of-plane transition metal $d_{z^{2}}$ and chalcogen $p_{z}$ orbitals do not contribute significantly to the top of the valence band which explains the reported weak changes in the electronic structure of this compound as a function of layer number. We estimate a band gap of 1.7 eV in pristine ReSe$_{2}$ using scanning tunneling spectroscopy and explore the implications on the gap following surface-doping with potassium. A lower bound of 1.4 eV is estimated for the gap in the fully doped case, suggesting that doping-dependent many-body effects significantly affect the electronic properties of ReSe$_{2}$. Our results, supported by density functional theory calculations, provide insight into the mechanisms behind polarization-dependent optical properties of rhenium dichalcogenides and highlight their place amongst two-dimensional crystals., Comment: 37 pages (including Supporting Information), 7 figures in the main text

Oxygen vacancies created in anatase TiO2 by UV photons (80 - 130 eV) provide an effective electron-doping mechanism and induce a hitherto unobserved dispersive metallic state. Angle resolved photoemission (ARPES) reveals that the quasiparticles are large polarons. These results indicate that anatase can be tuned from an insulator to a polaron gas to a weakly correlated metal as a function of doping and clarify the nature of conductivity in this material.

We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not affected by adsorbate-induced changes in the surface potential. These findings demonstrate that two properties crucial for enabling semiconductor-based spin electronics -- a large, robust spin splitting and ambipolar conduction -- are present in this material., Comment: 4 pages, 3 figures

We investigate on-site Coulomb interaction energy between two 3p holes U(Ni 3p) of ultrathin NiO films on Ag(001) by both x-ray photoelectron spectroscopy and Auger electron spectroscopy. As the film becomes thin, U(Ni 3p) monotonically decreases, and the difference of U(Ni 3p) for 1 monolayer (ML) film from that of bulk-like thick film \delta U(Ni 3p) reaches ~ -2.2 eV. The observed \delta U(Ni 3p) for 1 ML film is well reproduced by the differences of both the image potential and polarization energies between 1 ML film and the bulk-like thick film. Hence, the present results provide an evidence for the picture originally proposed by Duffy et al. [J. Phys. C: Solid State Phys., 16, 4087 (1983)] and Altieri et al. [Phys. Rev. B 59, R2517 (1999)], Comment: 14 pages, 4 figures, 1 table

Submonolayers of nickel oxide films were grown on an Ag(001) by pulsed laser deposition, and characterized in-situ by both scanning tunneling microscopy and X-ray photoelectron spectroscopy. We observed quasi-two-dimensional growth of the film, and clearly identified several kinds of defects, such as embedded metallic Ni clusters and, notably, oxygen atoms, even while looking deeply into the substrate. These originated from Ni and O hyperthermal projectiles as well as from NiO clusters that were formed during laser ablation of a NiO target. Those defects played a role of nucleation sites in extending the nucleation stage of thin film growth., Comment: This paper has been withdrawn by the authors. We published this article last year

Several defect configurations including oxygen vacancies have been investigated as possible origins of the reported room-temperature ferroelectricity of strontium titanate (STO) thin films [Appl. Phys. Letts. 91, 042908 (2007)]. First-principles calculations revealed that the Sr-O-O vacancy complexes create deep localized states in the band gap of SrTiO3 without affecting its insulating property. These results are in agreement with electronic structural changes determined from optical transmission and X-ray absorption measurements. This work opens the way to exploiting oxygen vacancies and their complexes as a source of ferroelectricity in perovskite oxide thin films, including STO.

We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using the crystal structural change that accompanies a VO_{2} MIT, we used bulk-sensitive X-ray diffraction (XRD) measurements to estimate the fraction of metallic volume p^{XRD} in our VO_{2} film. The temperature dependence of the p$^{XRD}$ was very closely correlated with the dc conductivity near the MIT temperature, and fit the percolation theory predictions quite well: $\sigma$ $\sim$ (p - p_{c})^{t} with t = 2.0$\pm$0.1 and p_{c} = 0.16$\pm$0.01. This agreement demonstrates that in our VO$_{2}$ thin film, the MIT should occur during the percolation process. We also used surface-sensitive scanning tunneling spectroscopy (STS) to investigate the microscopic evolution of the MIT near the surface. Similar to the XRD results, STS maps revealed a systematic decrease in the metallic phase as temperature decreased. However, this rate of change was much slower than the rate observed with XRD, indicating that the electronic inhomogeneity near the surface differs greatly from that inside the film. We investigated several possible origins of this discrepancy, and postulated that the variety in the strain states near the surface plays an important role in the broad MIT observed using STS. We also explored the possible involvement of such strain effects in other correlated electron oxide systems with strong electron-lattice interactions., Comment: 27 pages and 7 figures

High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed us to grow epitaxial YTiO3 thin films, which have an orthorhombic crystal structure with quite different a- and b-axes lattice constants. The YTiO3 film exhibited a clear ferromagnetic transition at 30 K with a saturation magnetization of about 0.7 uB/Ti. The magnetic easy axis was found to be along the [1-10] direction of the substrate, which differs from the single crystal easy axis direction, i.e., [001]., Comment: 14 pages, 4 figures

We investigated optical absorption coefficient spectra of an epitaxial VO2 film in wide photon energy (0.5 - 5.0 eV) and temperature (100 - 380 K) regions. In its insulating phase, we observed two d-d transition peaks around 1.3 eV and 2.7 eV and a charge transfer peak around 4.0 eV. As temperature goes above the metal-insulator transition temperature near 340 K, a large portion of the spectral weight of the peak around 4.0 eV becomes redistributed and a Drude-like peak appears. We initially applied the band picture to explain the details of the spectral weight changes, especially the temperature-dependent shift at 2.7 eV, but failed. To check whether the spectral changes are optical signatures of the electron-electron correlation effects, we applied the Hubbard model which takes into account orbital degeneracy. This orbitally degenerate Hubbard model could explain the details of the temperature-dependent peak shifts quite well. In addition, from the peak assignments based on the orbitally degenerate Hubbard model, we could obtain the values of U + delta(~ 3.4 eV) and JH (~ 0.7 eV), where U, delta, and JH are the on-site Coulomb repulsion energy, the crystal field splitting between the t2g bands, and the Hund's rule exchange energy, respectively. Our spectroscopic studies indicate that the electron-electron correlation could play an important role in the metal-insulator transition of VO2.

Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and electrode SrRuO3 layers. In these capacitors, we cannot observe any extrinsic electrical effects due to either the formation of an insulating interfacial passive layer or passive-layer-induced charge injection. Such high quality interfaces result in very good fatigue endurance, even for the 5 nm thick BaTiO3 capacitor., Comment: 8 pages, 4 figures

Time-dependent polarization relaxation behaviors induced by a depolarization field $E_{d}$ were investigated on high-quality ultrathin SrRuO$_{3}$/BaTiO$_{3}$/SrRuO$_{3}$ capacitors. The $E_d$ values were determined experimentally from an applied external field to stop the net polarization relaxation. These values agree with those from the electrostatic calculations, demonstrating that a large $E_{d}$ inside the ultrathin ferroelectric layer could cause severe polarization relaxation. For numerous ferroelectric devices of capacitor configuration, this effect will set a stricter size limit than the critical thickness issue.

We investigate the kinetic roughening of Ar$^+$ ion-sputtered Pd(001) surface both experimentally and theoretically. \textit{In situ} real-time x-ray reflectivity and \textit{in situ} scanning tunneling microscopy show that nanoscale adatom islands form and grow with increasing sputter time $t$. Surface roughness, $W(t)$, and lateral correlation length, $\xi(t)$, follows the scaling laws, $W(t)\sim t^{\beta}$ and $\xi(t)\sim t^{1/z}$ with the exponents $\beta\simeq 0.20$ and $1/z\simeq 0.20$, for ion beam energy $\epsilon=0.5$ keV, which is inconsistent with the prediction of the Kuramoto-Sivashinsky (KS) model. We thereby extend the KS model by applying the Sigmund theory of sputter erosion to the higher order, ${\cal O}(\nabla^4, h^2)$, where $h$ is surface height, and derive a new term of the form $\nabla^2(\nabla h)^2$ which plays an indispensable role in describing the observed morphological evolution of the sputtered surface., Comment: 4 pages, 6 figures