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The van der Waals (vdW) heterostructure of emerging two-dimensional (2D) quantum materials, with control over their quantum geometries, crystal symmetries, spin-orbit coupling, and magnetic anisotropies, provides a new platform for generating unconventional nonlinear Hall effects, spin polarization and efficiently controlling the magnetization dynamics for non-volatile spin-based computing. However, so far, the generation of a large out-of-plane spin polarization is limited to achieve energy-efficient field-free magnetization switching and spin dynamics measurements in all-2D vdW heterostructure are so far missing, where the interplay between spins and magnetization dynamics should enable the design of ultrafast spintronic devices. Here, we demonstrate magnetization dynamics and energy-efficient field-free spin-orbit torque (SOT) switching of out-of-plane magnet Fe3GaTe2 due to unconventional Berry curvature-induced out-of-plane spin polarization from a topological Weyl semimetal TaIrTe4 in a vdW heterostructure at room temperature. We observed a large non-linear 2nd harmonic Hall signal at room temperature and evaluated the SOT-induced magnetization dynamics with a large damping-like torque. Deterministic field-free SOT magnetization switching in vdW heterostructure of TaIrTe4/Fe3GaTe2 is observed at room temperature with a low current and power density, which is an order of magnitude better than that of conventional systems. From the magnetization switching experiments, a large SOT efficiency and a very large spin Hall conductivity. These findings on all-vdW heterostructures offer a promising route to energy-efficient and external field-free ultrafast spintronic technologies.

Two-dimensional (2D) van der Waals (vdW) magnets are crucial for ultra-compact spintronics. However, so far, no vdW crystal has exhibited tunable above-room-temperature intrinsic ferromagnetism in the 2D ultrathin regime. Here, we report the tunable above-room-temperature intrinsic ferromagnetism in ultrathin vdW crystal Fe$_{3+x}$GaTe$_2$ ($x$ = 0 and 0.3). By increasing the Fe content, the Curie temperature (TC) and room-temperature saturation magnetization of bulk Fe$_{3+x}$GaTe$_2$ crystals are enhanced from 354 to 376 K and 43.9 to 50.4 emu/g, respectively. Remarkably, the robust anomalous Hall effect in 3-nm Fe$_{3.3}$GaTe$_2$ indicate a record-high TC of 340 K and a large room-temperature perpendicular magnetic anisotropy energy of 6.6 * 10^5 J/m$^3$, superior to other ultrathin vdW ferromagnets. First-principles calculations reveal the asymmetric density of states and an additional large spin exchange interaction in ultrathin Fe$_{3+x}$GaTe$_2$ responsible for robust intrinsic ferromagnetism and higher Tc. This work opens a window for above-room-temperature ultrathin 2D magnets in vdW-integrated spintronics.

Magnetic tunnel junctions (MTJs) have been widely applied in spintronic devices for efficient spin detection through the imbalance of spin polarization at the Fermi level. The van der Waals (vdW) nature of two-dimensional (2D) magnets with atomic-scale flat surfaces and negligible surface roughness greatly facilitates the development of MTJs, yet is only restricted to ferromagnets. Here, we report A-type antiferromagnetism in 2D vdW single-crystal (Fe0.8Co0.2)3GaTe2 with TN~203 K in bulk and ~185 K in 9-nm nanosheets. The metallic nature and out-of-plane magnetic anisotropy make it a suitable candidate for MTJ electrodes. By constructing heterostructures based on (Fe0.8Co0.2)3GaTe2/WSe2/Fe3GaTe2, we obtain a large tunneling magnetoresistance (TMR) ratio of 180% at low temperature and the TMR retains at near-room temperature 280 K. Moreover, the TMR is tunable by the electric field down to 1 mV, implying the potential in energy-efficient spintronic devices. Our work provides new opportunities for 2D antiferromagnetic spintronics and quantum devices.

Developing novel high-temperature van der Waals ferromagnetic semiconductor materials and investigating their interface coupling effects with two-dimensional topological semimetals are pivotal for advancing next-generation spintronic and quantum devices. However, most van der Waals ferromagnetic semiconductors exhibit ferromagnetism only at low temperatures, limiting the proximity research on their interfaces with topological semimetals. Here, we report an intrinsic, van der Waals layered room-temperature ferromagnetic semiconductor crystal, FeCr0.5Ga1.5Se4 (FCGS), with a Curie temperature as high as 370 K, setting a new record for van der Waals ferromagnetic semiconductors. The saturation magnetization at low temperature (2 K) and room temperature (300 K) reaches 8.2 emu/g and 2.7 emu/g, respectively. Furthermore, FCGS possesses a bandgap of approximately 1.2 eV, which is comparable to the widely used commercial silicon. The FCGS/graphene heterostructure exhibits an impeccably smooth and gapless interface, thereby inducing a robust magnetic proximity coupling effect between FCGS and graphene. After the proximity coupling, graphene undergoes a charge carrier transition from electrons to holes, accompanied by a transition from non-magnetic to ferromagnetic transport behavior with robust anomalous Hall effect. Notably, the anomalous Hall effect remains robust even temperatures up to 400 K.

The discovery and manipulation of topological Hall effect (THE), an abnormal magnetoelectric response mostly related to the Dzyaloshinskii-Moriya interaction (DMI), are promising for next-generation spintronic devices based on topological spin textures such as magnetic skyrmions. However, most skyrmions and THE are stabilized in a narrow temperature window either below or over room temperature with high critical current manipulation. It is still elusive and challenging to achieve large THE with both wide temperature window till room temperature and low critical current manipulation. Here, by using controllable, naturally-oxidized, sub-20 and sub-10 nm 2D van der Waals room-temperature ferromagnetic Fe3GaTe2-x crystals, robust 2D THE with ultrawide temperature window ranging in three orders of magnitude from 2 to 300 K is reported, combining with giant THE of ~5.4 micro-ohm cm at 10 K and ~0.15 micro-ohm cm at 300 K which is 1-3 orders of magnitude larger than that of all known room-temperature 2D skyrmion systems. Moreover, room-temperature current-controlled THE is also realized with a low critical current density of ~6.2*10^5 A cm^-2. First-principles calculations unveil natural oxidation-induced highly-enhanced 2D interfacial DMI reasonable for robust giant THE. This work paves the way to room-temperature, electrically-controlled 2D THE-based practical spintronic devices.

Room-temperature electrically-tuned coercivity and nonvolatile multi-states magnetization switching is crucial for next-generation low-power 2D spintronics. However, most methods have limited ability to adjust the coercivity of ferromagnetic systems, and room-temperature electrically-driven magnetization switching shows high critical current density and high power dissipation. Here, highly-tunable coercivity and highly-efficient nonvolatile multi-states magnetization switching are achieved at room temperature in single-material based devices by 2D van der Waals itinerant ferromagnet Fe$_3$GaTe$_2$. The coercivity can be readily tuned up to ~98.06% at 300 K by a tiny in-plane electric field that is 2-5 orders of magnitude smaller than that of other ferromagnetic systems. Moreover, the critical current density and power dissipation for room-temperature magnetization switching in 2D Fe$_3$GaTe$_2$ are down to ~1.7E5 A cm$^{-2}$ and ~4E12 W m$^{-3}$, respectively. Such switching power dissipation is 2-6 orders of magnitude lower than that of other 2D ferromagnetic systems. Meanwhile, multi-states magnetization switching are presented by continuously controlling the current, which can dramatically enhance the information storage capacity and develop new computing methodology. This work opens the avenue for room-temperature electrical control of ferromagnetism and potential applications for vdW-integrated 2D spintronics.

Recently, Sukbae Lee et al.reported that material Pb$_{10-x}$Cu$_x$(PO$_4$)$_6$O (LK-99) has a series of characteristics of room temperature superconductors, including diamagnetic transition, resistance jump, nearly zero-resistance, magnetic field-dependent IV characteristics and so on (10.6111/JKCGCT.2023.33.2.061, arXiv:2307.12008, arXiv:2307.12037). However, whether LK-99 is really a room temperature superconductor is still controversial. On the one hand, some people think that the relatively weak diamagnetism of LK-99 reported by Sukbae Lee et al. is not the Meissner effect. On the other hand, there are doubts about the authenticity of its zero-resistance test results. Global replication studies have shown that LK-99 does have a large diamagnetic (arXiv:2308.01516), and also found a zero-resistance behavior at a low temperature of 110 $^\circ$K (arXiv:2308.01192). However, up to now, there is still no direct reproducible evidence to support Sukbae Lee et al.'s conclusion that LK-99 is a room temperature superconductor. Here, a distinct resistance jump was observed at about 387 $^\circ$K under ambient pressure in our experiment for unclear reason including possible impurity's contribution. The overall resistance of the test LK-99 sample still shows semiconductivity, and the resistance cannot really drop to zero. Our findings indicate that to identify the true potential of LK-99, high quality crystals without impurity are very important.

Recently, Sukbae Lee et al. reported inspiring experimental findings on the atmospheric superconductivity of a modified lead apatite crystal (LK-99) at room temperature (10.6111/JKCGCT.2023.33.2.061, arXiv: 2307.12008, arXiv: 2307.12037). They claimed that the synthesized LK-99 materials exhibit the Meissner levitation phenomenon of superconductors and have a superconducting transition temperature (Tc) higher than 400 K. Here, for the first time, we successfully verify and synthesize the LK-99 crystals which can be magnetically levitated with larger levitated angle than Sukbae Lee's sample at room temperature. It is expected to realize the true potential of room temperature, non-contact superconducting magnetic levitation in near future.

Emerging wide varieties of the two-dimensional (2D) van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next-generation spintronic devices. However, due to the lower Curie temperature of the vdW 2D ferromagnets than room temperature, electrically manipulating its magnetization at room temperature has not been realized. In this work, we demonstrate the perpendicular magnetization of 2D vdW ferromagnet Fe3GaTe2 can be effectively switched at room temperature in Fe3GaTe2/Pt bilayer by spin-orbit torques (SOTs) with a relatively low current density of 1.3 10^7A/cm2. Moreover, the high SOT efficiency of \xi_{DL}~0.22 is quantitatively determined by harmonic measurements, which is higher than those in Pt-based heavy metal/conventional ferromagnet devices. Our findings of room-temperature vdW 2D ferromagnet switching by SOTs provide a significant basis for the development of vdW-ferromagnet-based spintronic applications.

Magnetic tunnel junctions (MTJs) based on all-two dimensional (2D) van der Waals heterostructures with sharp and clean interfaces in atomic scale are essential for the application of next-generation spintronics. However, the lack of room-temperature intrinsic ferromagnetic crystals with perpendicular magnetic anisotropy has greatly hindered the development of vertical MTJs. The discovery of room-temperature intrinsic ferromagnetic 2D crystal Fe3GaTe2 has solved the problem and greatly facilitated the realization of practical spintronic devices. Here, we demonstrate a room-temperature MTJ based on Fe3GaTe2/WS2/Fe3GaTe2 heterostructure. The tunnelling magnetoresistance (TMR) ratio is up to 213% with high spin polarization of 72% at 10 K, the highest ever reported in Fe3GaTe2-based MTJs up to now. The tunnelling spin-valve signal robustly exists at room temperature (300 K) with bias current down to 10 nA. Moreover, the spin polarization can be modulated by bias current and the TMR shows a sign reversal at large bias current. Our work sheds light on the potential application for low-energy consumption all-2D vdW spintronics and offers alternative routes for the electronic control of spintronic devices.

Spin-valve effect has been the focus of spintronics over the last decades due to its potential in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are highly expected to build the spin-valve heterojunction. However, the Curie temperatures (TC) of the vdW ferromagnetic 2D crystals are mostly below room temperature (~30-220 K). It is very challenging to develop room temperature, ferromagnetic (FM) 2D crystals based spin-valve devices which are still not available to date. We report the first room temperature, FM 2D crystal based all-2D vdW Fe3GaTe2/MoS2/Fe3GaTe2 spin valve devices. The Magnetoresistance (MR) of the all- devices is up to 15.89% at 2.3 K and 11.97% at 10 K, 4-30 times of MR from the spin valves of Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ and conventional NiFe/MoS$_2$/NiFe. Typical spin valve effect shows strong dependence on MoS2 spacer thickness in the vdW heterojunction. Importantly, the spin valve effect (0.31%) still robustly exists at 300 K with low working currents down to 10 nA (0.13 A/cm$^2$). The results provide a general vdW platform to room temperature, 2D FM crystals based 2D spin valve devices.

Weyl semimetal Td-phase WTe2 possesses the spin-resolved band structure with strong spin-orbit coupling, holding promises as a useful spin source material. The noncentrosymmetric crystalline structure of Td-WTe2 endows the generation of the out-of-plane polarized spin, which is of great interest in magnetic memory applications. Previously, WTe2 was explored in spin devices based on mechanically exfoliated single crystal flakes with a size of micrometers. For practical spintronics applications, it is highly desirable to implement wafer-scale thin films. In this work, we utilize centimeter-scale chemical vapor deposition (CVD)-grown Td-WTe2 thin films and study the spin current generation by the spin torque ferromagnetic resonance technique. We find the in-plane and out-of-plane spin conductivities of 7.36 x 10^3 (h/2e) (ohm-m)^-1 and 1.76 x 10^3 (h/2e) (ohm-m)^-1, respectively, in CVD-growth 5 nm-WTe2. We further demonstrate the current-induced magnetization switching in WTe2/NiFe at room temperature in the domain wall motion regime, which may invigorate potential spintronic device innovations based on Weyl semimetals.

The Weyl semimetal WTe2 and MoTe2 show great potential in generating large spin currents since they possess topologically-protected spin-polarized states and can carry a very large current density. In addition, the intrinsic noncentrosymmetry of WTe2 and MoTe2 endows with a unique property of crystal symmetry-controlled spin-orbit torques. An important question to be answered for developing spintronic devices is how spins relax in WTe2 and MoTe2. Here, we report a room-temperature spin relaxation time of 1.2 ns (0.4 ns) in WTe2 (MoTe2) thin film using the time-resolved Kerr rotation (TRKR). Based on ab initio calculation, we identify a mechanism of long-lived spin polarization resulting from a large spin splitting around the bottom of the conduction band, low electron-hole recombination rate and suppression of backscattering required by time-reversal and lattice symmetry operation. In addition, we find the spin polarization is firmly pinned along the strong internal out-of-plane magnetic field induced by large spin splitting. Our work provides an insight into the physical origin of long-lived spin polarization in Weyl semimetals which could be useful to manipulate spins for a long time at room temperature.