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117 results on '"Chang, G.S."'

13. Probing interfacial characteristics of rubrene/pentacene and pentacene/rubrene bilayers with soft X-ray spectroscopy

Author

Seo, J.H., Pedersen, T.M., Chang, G.S., Moewes, A., Yoo, K.H., Cho, S.J., and Whang, C.N.

Subjects
X-ray spectroscopy -- Usage, Electron configuration -- Analysis, Lipid membranes -- Chemical properties, Lipid membranes -- Atomic properties, Chemicals, plastics and rubber industries
Abstract

The electronic structure of rubrene/pentacene and pentacene/rubrene bilayers was investigated by different spectroscopic methods and DFT calculations. The results revealed that the electronic structure of the pentacene-rubrene interface has a strong dependence on interface characteristics which in turn depend on the layering order used.

Published
2007

15. Photoreflectance studies of surface state density of InAIAs

Author

Hwang, J.S., Chang, G.S., Hwang, W.C., and Chen, W.J.

Subjects
Fermi surfaces -- Research, Semiconductors -- Research, Physics
Abstract

A new study uses photoreflectance to investigate the surface Fermi level and surface barrier height of InAIAs.

Published
2001

17. Analysis of Fermi level pinning and surface state distribution in InAlAs heterostructures

Author

Chou, W.Y., Chang, G.S., Hwang, W.C., and Hwang, J.S.

Subjects
Fermi surfaces -- Research, Physics
Abstract

The surface Fermi level of a series In1-xAlxAs surface-intrinsic-n+ structures is not pinned at midgap over aluminum concentration of between 0.42 and 0.57. The surface Fermi level generally varies with the undoped layer thicknesses, but for each Al concentration there is a certain range of thicknesses within which the surface Fermi layer is weakly pinned. A model of two shallow surface state distributions within two small intervals in the band gap can be used to interpret the behaviour of the dependence of the built-in electric field on the undoped layer thickness.

Published
1998

18. Adhesion enhancement of ion beam mixed Cu/Al/polyimide

Author

Chang, G.S., Jung, S.M., Choi, I.S., Whang, C.N., Woo, J.J., Lee, Y.P., and Lee, Y.S.

Subjects
Polyimides -- Research, Ion bombardment -- Research, Physics
Abstract

Cu/polyimide systems which are mutually inert showed a noticeable adhesion improvement after ion beam mixing. N(sub 2)(super +) ions were more effective in enhancing the adhesion strength than Ar+ because the N(sub 2)(super +) ions were incorporated as an active bond component. The adhesion improvement was determined to be caused by the induction of adhesion promoters on the polyimide by ion irradiation. A thin Al layer as a buffer layer produces a ternary compound of CuAl2O4 that improves the adhesion strength further.

Published
1997

23. Determination of surface state density for GaAs and InAlAs by room temperature photoreflectance

Author

Chang, G.S., Hwang, W.C., Wang, Y.C., Yang, Z.P., and Hwang, J.S.

Subjects
Gallium compounds -- Research, Surfaces (Physics) -- Research, Physics
Abstract

The surface state densities of GaAs and In0.52Al0.48 surface intrinsic-n+ structures were examined using room temperature photoreflectance (PR). The observed Franz-Keldysh oscillations in the PR spectra were used to assess the built-in electric field and the surface barrier height. The dependence of the surface barrier height on the pump beam intensity determines the surface state density and the pinning position of the Fermi level.

Published
1999

33. Defect-induced ferromagnetism in mn-doped Cu2O

Author

Chang, G.S., Kurmaev, E.Z., Boukhvalov, D.W., Moewes, A., Finkelstein, L.D., Wei, M., and MacManus-Driscoll, J.L.

Subjects
Theory of Condensed Matter
Abstract

Contains fulltext : 72141.pdf ( ) (Closed access) 5 p.

Published
2008

36. Soft X-ray fluorescence measurements of irradiated polyimide and polycarbosilane films

Author

Kurmaev, E.Z., Winarski, R.P., Ederer, D.L., Pivin, J.C., Shamin, S.N., Moewes, A., Callcott, T.A., Chang, G.S., Whang, C.N., Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)

Published
1998

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