Search

Your search keyword '"Chandrashekhar MVS"' showing total 129 results

Search Constraints

Start Over You searched for: Author "Chandrashekhar MVS" Remove constraint Author: "Chandrashekhar MVS"
129 results on '"Chandrashekhar MVS"'

Search Results

1. Comparison of raw accelerometry data from ActiGraph, Apple Watch, Garmin, and Fitbit using a mechanical shaker table

2. A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases

3. High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy

4. Graphene to Graphane: Novel Electrochemical Conversion

5. Ultrafast Relaxation Dynamics of Hot Optical Phonons in Graphene

6. Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene

7. Accuracy Of Chest Placed Photoplethysmography In Measuring Heart Rate In Children

8. Emission of Terahertz Radiation from SiC

9. Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene

10. Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible

11. Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene

15. Al0.64Ga0.36N channel MOSHFET on single crystal bulk AlN substrate.

25. Thick AlN Templates By MOCVD for the Thermal Management of III-N Electronics

31. High‐Temperature Operation of AlxGa1− xN ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides

34. Heterometallic multinuclear nodes directing MOF electronic behavior

35. Publisher's Note: “Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence” [Appl. Phys. Lett. 115, 213502 (2019)]

39. Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric

41. High-current recessed gate enhancement-mode ultrawide bandgap AlxGa1−xN channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V.

42. An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays.

43. Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1.

44. High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides.

46. Electronic Properties of Bimetallic Metal–Organic Frameworks (MOFs): Tailoring the Density of Electronic States through MOF Modularity

47. Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence.

48. Electronic Properties of Bimetallic Metal–Organic Frameworks (MOFs): Tailoring the Density of Electronic States through MOF Modularity

Catalog

Books, media, physical & digital resources