129 results on '"Chandrashekhar MVS"'
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2. A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases
3. High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy
4. Graphene to Graphane: Novel Electrochemical Conversion
5. Ultrafast Relaxation Dynamics of Hot Optical Phonons in Graphene
6. Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene
7. Accuracy Of Chest Placed Photoplethysmography In Measuring Heart Rate In Children
8. Emission of Terahertz Radiation from SiC
9. Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene
10. Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible
11. Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene
12. Al0.64Ga0.36N Channel MOSHFET on Single Crystal Bulk AlN Substrate
13. High figure of merit extreme bandgap Al0.87Ga0.13N-Al0.64Ga0.36N heterostructures over bulk AlN substrates
14. Threshold voltage control with high-temperature gate-oxide annealing in ultrawide bandgap AlGaN-channel MOSHFETs
15. Al0.64Ga0.36N channel MOSHFET on single crystal bulk AlN substrate.
16. Realization of flexible AlGaN/GaN HEMT by laser liftoff
17. Room Temperature RC Series Zero Phonon Line Emission from Electron Irradiated Cubic Boron Nitride
18. Graphene/MoS₂ Thin Film Based Two Dimensional Barristors With Tunable Schottky Barrier for Sensing Applications
19. Excimer laser liftoff of AlGaN/GaN HEMTs on thick AlN heat spreaders
20. Purification and mechanical nanosizing of Eu-doped GaN
21. High Hydrogen Content Graphene Hydride Compounds & High Cross- Section Cladding Coatings for Fast Neutron Detection
22. Improved Charge Transport in PbS Quantum Dot Thin Films following Gel Permeation Chromatography Purification
23. Enhanced light extraction efficiency of micropixel geometry AlGaN DUV light-emitting diodes
24. Temperature Effect on Performance of Enhancement Mode Al0.4Ga0.6n-Channel Moshfets with Hybrid Oxide
25. Thick AlN Templates By MOCVD for the Thermal Management of III-N Electronics
26. High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V
27. An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays
28. Temperature characteristics of high-current UWBG enhancement and depletion mode AlGaN-channel MOSHFETs
29. Photovoltaic and photoconductive action due to PbS quantum dots on graphene/SiC Schottky diodes from NIR to UV
30. Ultrawide bandgap Al x Ga1–x N channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1
31. High‐Temperature Operation of AlxGa1− xN ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides
32. An Initial Study of Ultraviolet C Optical Losses for Monolithically Integrated AlGaN Heterojunction Optoelectronic Devices
33. Photonics integrated circuits using Al x Ga1−x N based UVC light-emitting diodes, photodetectors and waveguides
34. Heterometallic multinuclear nodes directing MOF electronic behavior
35. Publisher's Note: “Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence” [Appl. Phys. Lett. 115, 213502 (2019)]
36. Investigation of SiO2 Cap for Al Implant Activation in 4H-SiC
37. Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene
38. Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence
39. Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric
40. (Invited) Ultra-Wide Bandgap Photodetection Concepts
41. High-current recessed gate enhancement-mode ultrawide bandgap AlxGa1−xN channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V.
42. An opto-thermal study of high brightness 280 nm emission AlGaN micropixel light-emitting diode arrays.
43. Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1.
44. High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides.
45. High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates
46. Electronic Properties of Bimetallic Metal–Organic Frameworks (MOFs): Tailoring the Density of Electronic States through MOF Modularity
47. Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence.
48. Electronic Properties of Bimetallic Metal–Organic Frameworks (MOFs): Tailoring the Density of Electronic States through MOF Modularity
49. Metal Catalyzed Electrochemical Synthesis of Hydrocarbons from Epitaxial Graphene
50. Mechanism of Electrochemical Hydrogenation of Epitaxial Graphene
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