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Understanding how local distortions determine the functional properties of high entropy materials, containing five or more elements at a crystallographic site, is an open challenge. We address this for a compositionally complex spinel oxide (Mn$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)Cr$_2$O$_4$ ($A^5$Cr$_2$O$_4$). By comparatively examining extended X-ray absorption fine structure on $A^5$Cr$_2$O$_4$ and its parent counterparts $A$Cr$_2$O$_4$ along with density functional theory calculations for multiple configurations, we find that the element-specific distortions go beyond the first neighbor. Specifically, the strong Jahn-Teller distortion present in CuCr$_2$O$_4$ is found to be completely suppressed in $A^5$Cr$_2$O$_4$. Instead, there is a broad distribution of Cu-O and Cu-Cr bond distances while other $A$-O distances acquire certain specific values. This study demonstrates the additional flexibility of a cationic sublattice in maintaining a uniform long-range structure, in contrast to previous reports showing only the accommodative anionic sublattice. Remarkably, despite the presence of multiple magnetic ions and variable bond lengths, the mean field magnetic interactions of $A^5$Cr$_2$O$_4$ exhibit a striking resemblance to those of NiCr$_2$O$_4$. This compelling observation originates from the comparability of bond lengths around Cr in both materials. Our study paves the way for a deeper understanding of the impact of local structural distortions in compositionally complex quantum materials, enabling the targeted design with tailored properties.

In the present study, we have discussed the up-turn behavior in the resistivity pattern of the topological nodal line semimetal InBi. We argued that such nature could be generalized with a mathematical model, that can be applied to any compounds exhibiting similar behavior. The extremely high magnetoresistance (XMR) has also been explained by the carrier compensation in the compound, estimated from the Hall conductivity. Moreover, from the study of Subhnikov-de Haas (SdH) oscillation and density functional theory (DFT), we obtained the complete three-dimensional (3D) Fermi surface topology of the compound InBi. A detailed understanding of carriers' behavior has been discussed using those studies. We have also unfurled the topology of each electron and hole pocket and its possible modulation with electron and hole doping.

In the present work, a thin film was deposited on quartz substrate by reactive RF magnetron sputtering of high purity (99.999%) aluminium target using ultra-high pure (Ar + N2) gas mixture. The percentage ratio of Ar and N2 in the gas mixture was 95% and 5%, respectively. Chemical characterization using x-ray photoelectron spectroscopy (XPS) and energy-dispersive xray (EDX) spectroscopy reveals that in the presence of dilute nitrogen, Al prefers to react with residual oxygen to form Al2O3 while the nitrogen is incorporated in it. The stoichiometry of bulk film is Al2N0.38O3.1. Magnetic and electrical properties measurement shows that the film exhibits ntype dilute magnetic semiconductor (DMS) property at 300K. The film has low electrical resistivity of 6.3 {\Omega}-cm and high carrier mobility of 5.7*106 cm2V-1s-1 at 300K. A density functional theory (DFT) calculation was performed to investigate the origin of observed magnetism in the film. From first-principles calculation based on DFT, it is found that for thermodynamic stability dilute nitrogen incorporated in Al2O3 preferred to sit at the interstitial site, which is responsible for observed magnetic property. Present study reported here provides a new insight to prepare rarely observed n-type DMS at room temperature by incorporating nitrogen interstitials in Al2O3, which is desirable for potential application in the field of spintronics.

In this work, we studied cobalt nitride (Co-N) thin films deposited using a dc magnetron sputtering method at a substrate temperature (\Ts) of 523\,K. We find that independent of the reactive gas flow (\pn) used during sputtering, the phases of Co-N formed at this temperature seems to be identical having N \pat~$\sim$5. This is contrary to Co-N phases formed at lower \Ts. For \Ts$\sim$300\,K, an evolution of Co-N phases starting from Co(N)$\rightarrow$\tcn$\rightarrow$Co$_3$N$\rightarrow$CoN can be seen as \pn increases to 100\p, whereas when the substrate temperature increases to 523\,K, the phase formed is a mixture of Co and \tcn, independent of the {\pn} used during sputtering. We used x-ray diffraction (XRD) to probe long range ordering, x-ray absorption spectroscopy (XAS) at Co absorption edge for the local structure, Magneto-optical Kerr e ffect (MOKE) and polarized neutron reflectivity (PNR) to measure the magnetization of samples. Quantification of N \pat~was done using secondary ion mass spectroscopy (SIMS). Measurements suggest that the magnetic moment of Co-N samples deposited at 523\,K is slightly higher than the bulk Co moment and does not get affected with the \pn~used for reactive sputtering. Our results provide an important insight about the phase formation of Co-N thin films which is discussed in this work., Comment: 6 pages, 5 figures