Search

Your search keyword '"Cesura, A."' showing total 547 results
Start Over Author "Cesura, A."
547 results on '"Cesura, A."'

3. Local droplet etching of a vicinal InGaAs(111)A metamorphic layer

Author

Tuktamyshev, A, Lambardi, D, Vichi, S, Cesura, F, Cecchi, S, Fedorov, A, Bietti, S, Sanguinetti, S, Tuktamyshev, Artur, Lambardi, Davide, Vichi, Stefano, Cesura, Federico, Cecchi, Stefano, Fedorov, Alexey, Bietti, Sergio, Sanguinetti, Stefano, Tuktamyshev, A, Lambardi, D, Vichi, S, Cesura, F, Cecchi, S, Fedorov, A, Bietti, S, Sanguinetti, S, Tuktamyshev, Artur, Lambardi, Davide, Vichi, Stefano, Cesura, Federico, Cecchi, Stefano, Fedorov, Alexey, Bietti, Sergio, and Sanguinetti, Stefano

Abstract

We demonstrated nanopit formation by Ga-assisted local droplet etching technique in InGaAs metamorphic layers grown on vicinal GaAs(111)A substrates. We studied nanopit formation depending on the substrate temperature, Ga flux and Ga amount. The etched pits show a highly symmetrical pyramidal shape with an equilateral triangular base and the edges of the triangle are along <11 ̄0> directions. The observed behavior, in terms of nanopit density, depth and, aspect ratio is well described by a model taking into account the dynamics of the droplet etching process.

Published
2024

4. Droplet free self-assembling of high density nanoholes on GaAs(100) via thermal drilling

Author

Cesura, F, Vichi, S, Tuktamyshev, A, Bietti, S, Fedorov, A, Sanguinetti, S, Iizuka, K, Tsukamoto, S, Cesura F., Vichi S., Tuktamyshev A., Bietti S., Fedorov A., Sanguinetti S., Iizuka K., Tsukamoto S., Cesura, F, Vichi, S, Tuktamyshev, A, Bietti, S, Fedorov, A, Sanguinetti, S, Iizuka, K, Tsukamoto, S, Cesura F., Vichi S., Tuktamyshev A., Bietti S., Fedorov A., Sanguinetti S., Iizuka K., and Tsukamoto S.

Abstract

Dense arrays of self-assembled nanoholes are fabricated in GaAs(100) surfaces by As-free oxide cleaning thermal process. The formation of pit-like structures above 500 °C occurs by congruent evaporation of GaAs in the areas where the oxides have already desorbed. Thermally etched nanoholes exhibit inverted symmetric conical shape with an average depth/base diameter ratio of 0.21. Shallow and deep nanoholes are formed with this method, their depth ranging from 2 nm to 15 nm. Metallic Indium deposited onto the etched surfaces accumulates at the bottom of the nanoholes, thus making the etched pits a convenient template for the fabrication of high density quantum dot structures.

Published
2024

6. SDI-118, a novel procognitive SV2A modulator: First-in-human randomized controlled trial including PET/fMRI assessment of target engagement

Author

Wouter Botermans, Michel Koole, Koen Van Laere, Jonathan R. Savidge, John A. Kemp, Stefan Sunaert, Maeve M. Duffy, Steven Ramael, Andrea M. Cesura, Kevin D’Ostilio, Denis Gossen, Torsten M. Madsen, Thomas Lodeweyckx, and Jan de Hoon

Subjects
randomized controlled trial, SDI-118, synaptic vesicle glycoprotein, SV2A, positron emission tomography, resting state functional MRI (rsfMRI), Therapeutics. Pharmacology, RM1-950
Abstract

Background: Current treatments for progressive neurodegenerative disorders characterized by cognitive impairment either have limited efficacy or are lacking altogether. SDI-118 is a small molecule which modulates the activity of synaptic vesicle glycoprotein 2A (SV2A) in the brain and shows cognitive enhancing effects in a range of animal models of cognitive deficit.Methods: This first-in-human study evaluated safety, tolerability, and pharmacokinetics/pharmacodynamics of SDI-118 in single ascending oral doses up to 80 mg administered to 32 healthy male subjects. Brain target occupancy was measured in eight subjects using positron emission tomography with PET-ligand [11C]-UCB-J. Food effect was assessed in seven subjects. Mood state was regularly evaluated using standardized questionnaires, and resting state fMRI data were analyzed as exploratory objectives.Key Results: At all doses tested, SDI-118 was well tolerated and appeared safe. Adverse events were mainly dizziness, hypersomnia, and somnolence. All were mild in intensity and increased in frequency with increasing administered dose. No dose-limiting adverse reactions were observed at any dose. SDI-118 displayed a linear pharmacokinetic profile with no significant food effect. Brain penetration and target engagement were demonstrated by a dose-proportional SV2A occupancy.Conclusion: Single oral doses of SDI-118 up to 80 mg were very well tolerated in healthy male subjects. Dose-proportional SV2A occupancy in the brain was demonstrated with brain imaging. Adverse effects in humans mainly occurred in higher dose ranges, with high occupancy levels, and were all mild and self-limiting. These data support further clinical exploration of the compound in patients with cognitive disorders.Clinical Trial Registration:https://clinicaltrials.gov/, identifier NCT05486195

Published
2023
Full Text
View/download PDF

8. Consensus Conference on Standardizing Terminology for Venous Leg Ulcers: Increasing Clarity and Communication in Clinical Practice

Author

Rivolo, Massimo, primary, Teobaldi, Ilaria, additional, Bellini, Fabio, additional, Granata, Fabio, additional, Bobbink, Paul, additional, Caniglia, Arturo, additional, Clerici, Giacomo, additional, Corda, Domenico, additional, Granara, Deborah Cesura, additional, Harikrishna, Nair K. R., additional, Innocenti, Luca, additional, Lindsay, Ellie, additional, Maggio, Daniele, additional, Probst, Sebastian, additional, Ronconi, Maurizio, additional, Schofield, Alison, additional, Rivellini, Carlo, additional, Cassatella, Renato, additional, Hampton, Sylvie, additional, Whiteley, Mark Steven, additional, and Piazza, Salvatore, additional

Published
2024
Full Text
View/download PDF

11. Enhancing intermediate band solar cells performances through quantum engineering of dot states by Droplet Epitaxy

Author

Scaccabarozzi, A, Vichi, S, Bietti, S, Cesura, F, Aho, T, Guina, M, Cappelluti, F, Acciarri and Stefano Sanguinetti, M, Andrea Scaccabarozzi, Stefano Vichi, Sergio Bietti, Federico Cesura, Timo Aho, Mircea Guina, Federica Cappelluti, Maurizio Acciarri and Stefano Sanguinetti, Scaccabarozzi, A, Vichi, S, Bietti, S, Cesura, F, Aho, T, Guina, M, Cappelluti, F, Acciarri and Stefano Sanguinetti, M, Andrea Scaccabarozzi, Stefano Vichi, Sergio Bietti, Federico Cesura, Timo Aho, Mircea Guina, Federica Cappelluti, and Maurizio Acciarri and Stefano Sanguinetti

Published
2023

12. A Sub-250mW 1-to-56Gb/s Continuous-Range PAM-4 42.5dB IL ADC/DAC-Based Transceiver in 7nm FinFET.

Author

Matteo Pisati, Fernando De Bernardinis, Paolo Pascale, Claudio Nani, Marco Sosio, Enrico Pozzati, Nicola Ghittori, Federico Magni, Marco Garampazzi, Giacomino Bollati, Antonio Milani, Alberto Minuti, Fabio Giunco, Paola Uggetti, Ivan Fabiano, Nicola Codega, Alessandro Bosi, Nicola Carta, Demetrio Pellicone, Giorgio Spelgatti, Massimo Cutrupi, Andrea Rossini, Roberto G. Massolini, Giovanni Cesura, and Ivan Bietti

Published
2019
Full Text
View/download PDF

13. Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets

Author

Mani Azadmand, Stefano Vichi, Federico Guido Cesura, Sergio Bietti, Daniel Chrastina, Emiliano Bonera, Giovanni Maria Vanacore, Shiro Tsukamoto, and Stefano Sanguinetti

Subjects
InGaN, molecular beam epitaxy, metal droplets, vapor–liquid–solid, Chemistry, QD1-999
Abstract

We investigated the composition uniformity of InGaN epilayers in presence of metal droplets on the surface. We used Plasma Assisted MBE to grow an InGaN sample partially covered by metal droplets and performed structural and compositional analysis. The results showed a marked difference in indium incorporation between the region under the droplets and between them. Based on this observation we proposed a theoretical model able to explain the results by taking into account the vapour liquid solid growth that takes place under the droplet by direct impingement of nitrogen adatoms.

Published
2022
Full Text
View/download PDF

15. Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

Author

Artur Tuktamyshev, Stefano Vichi, Federico Guido Cesura, Alexey Fedorov, Giuseppe Carminati, Davide Lambardi, Jacopo Pedrini, Elisa Vitiello, Fabio Pezzoli, Sergio Bietti, and Stefano Sanguinetti

Subjects
droplet epitaxy, quantum dot, metamorphic buffer layer, strain relaxation, III–V semiconductors, Chemistry, QD1-999
Abstract

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.

Published
2022
Full Text
View/download PDF

21. Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

Author

Tuktamyshev, A, Vichi, S, Cesura, F, Fedorov, A, Carminati, G, Lambardi, D, Pedrini, J, Vitiello, E, Pezzoli, F, Bietti, S, Sanguinetti, S, Tuktamyshev, Artur, Vichi, Stefano, Cesura, Federico, Fedorov, Alexey, Carminati, Giuseppe, Lambardi, Davide, Pedrini, Jacopo, Vitiello, Elisa, Pezzoli, Fabio, Bietti, Sergio, Sanguinetti, Stefano, Tuktamyshev, A, Vichi, S, Cesura, F, Fedorov, A, Carminati, G, Lambardi, D, Pedrini, J, Vitiello, E, Pezzoli, F, Bietti, S, Sanguinetti, S, Tuktamyshev, Artur, Vichi, Stefano, Cesura, Federico, Fedorov, Alexey, Carminati, Giuseppe, Lambardi, Davide, Pedrini, Jacopo, Vitiello, Elisa, Pezzoli, Fabio, Bietti, Sergio, and Sanguinetti, Stefano

Abstract

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In (Formula presented.) Al (Formula presented.) As metamorphic buffer layer grown on a GaAs(111)A misoriented substrate. The comparison between the quantum electronic calculations of the optical transitions and the emission properties of the quantum dots highlights the presence of a strong quenching of the emission from larger quantum dots. Detailed analysis of the surface morphology during the capping procedure show the presence of a critical size over which the quantum dots are plastically relaxed.

Published
2022

22. Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets

Author

Azadmand, M, Vichi, S, Cesura, F, Bietti, S, Chrastina, D, Bonera, E, Vanacore, G, Tsukamoto, S, Sanguinetti, S, Azadmand, Mani, Vichi, Stefano, Cesura, Federico Guido, Bietti, Sergio, Chrastina, Daniel, Bonera, Emiliano, Vanacore, Giovanni Maria, Tsukamoto, Shiro, Sanguinetti, Stefano, Azadmand, M, Vichi, S, Cesura, F, Bietti, S, Chrastina, D, Bonera, E, Vanacore, G, Tsukamoto, S, Sanguinetti, S, Azadmand, Mani, Vichi, Stefano, Cesura, Federico Guido, Bietti, Sergio, Chrastina, Daniel, Bonera, Emiliano, Vanacore, Giovanni Maria, Tsukamoto, Shiro, and Sanguinetti, Stefano

Abstract

We investigated the composition uniformity of InGaN epilayers in presence of metal droplets on the surface. We used Plasma Assisted MBE to grow an InGaN sample partially covered by metal droplets and performed structural and compositional analysis. The results showed a marked difference in indium incorporation between the region under the droplets and between them. Based on this observation we proposed a theoretical model able to explain the results by taking into account the vapour liquid solid growth that takes place under the droplet by direct impingement of nitrogen adatoms.

Published
2022

23. Antipsychotics and the Dopamine–Serotonin Connection

Author

Ellenbroek, Bart A., Cesura, Andrea M., Bernstein, Peter R., Series editor, Buschauer, Armin, Series editor, Georg, Gunda I., Series editor, Lowe, John A., Series editor, Stilz, Ulrich, Series editor, Supuran, Claudiu T., Series editor, Saxena, Anil Kumar, Series editor, Celanire, Sylvain, editor, and Poli, Sonia, editor

Published
2015
Full Text
View/download PDF

25. Cesura - Rivista, Vol 1 No 2 (2022): CESURA - Rivista, 1/2 (2022)

Author

Cesura-Rivista

Abstract

Il secondo fascicolo della prima annata (2022) si apre con la sezione dedicata agli Studi, che contiene articoli di Antonio Biscione, Eduard Juncosa Bonet, Alessio Russo e Giovanni De Vita. La sezione Testimonianze e documenti contiene una “spigolatura” documentaria di Biagio Nuciforo. La sezione Letture contiene recensioni di Gema Belia Capilla Aledón (per Francesco Cacopardo); James Hankins (per Giovanni De Vita); Juan Alfonso de Benavente, ed. F. Bautista & P. M. Baños (per Nicoletta Rozza). CESURA - Rivista, 1 (2022) - intera annata (fascicoli 1 e 2) ISSN: 2974-637X ISBN: 978-88-945152-1-3, Una tessera senofontea ritrovata...219-228 Una lettera cifrata sui preparativi della Congiura dei Baroni...325-332 Lettura di Gema Belia Capilla Aledón, Poder y representación en la figura de Alfonso el Magnànimo (1416-1458), València, Institució Alfons el Magnàim, 2019...335-340 La trama del buon governo...229-266 James Hankins, La politica della virtù. Formare la persona e formare lo Stato nel Rinascimento italiano, traduzione e cura di Stefano U. Baldassarri e Donatella Downey, Roma, Viella, 2022...340-350 «Basis et firmamentum totius regni»: i castellani regi di Calabria al tempo di Alfonso il Magnanimo e Ferrante d’Aragona (1442-1494)...267-304 Juan Alfonso de Benavente, De scientiarum laudibus / Sobre el elogio de las ciencias. Una oración bilingüe para el comienzo del curso académico en el Estudio salamantino, ed. F. Bautista & P. M. Baños, Salamanca, Ed. Univ. Sala­man­ca, 2020...351-360 Un testo poco noto dell’Umanesimo politico: il “De gerendo magistratu” di Francesco Patrizi...305-321

Published
2023
Full Text
View/download PDF

26. Cesura - Rivista, V. 2 N. 1 (2023): CESURA - Rivista, 2/1 (2023)

Author

Cesura-Rivista

Abstract

Primo fascicolo della seconda annata. In costruzione. ISSN: 2974-637X ISBN: 978-88-945152-2-0, Els incunables napolitans de Pere Miquel Carbonell i la difusió de Pier Paolo Vergerio a la Catalunya quatrecentista...3-16 Storiografi alla corte aragonese di Alfonso

Published
2023
Full Text
View/download PDF

29. SDI-118, a novel procognitive SV2A modulator: First-in-human randomized controlled trial including PET/fMRI assessment of target engagement

Author

Botermans, Wouter, primary, Koole, Michel, additional, Van Laere, Koen, additional, Savidge, Jonathan R., additional, Kemp, John A., additional, Sunaert, Stefan, additional, Duffy, Maeve M., additional, Ramael, Steven, additional, Cesura, Andrea M., additional, D’Ostilio, Kevin, additional, Gossen, Denis, additional, Madsen, Torsten M., additional, Lodeweyckx, Thomas, additional, and de Hoon, Jan, additional

Published
2023
Full Text
View/download PDF

34. Cesura - Rivista, Vol 1 No 1 (2022): CESURA - Rivista, 1/1 (2022)

Author

Cesura-Rivista

Abstract

Il primo numero è aperto da un Editoriale di Guido Cappelli e Fulvio Delle Donne sulle finalità e sull’impegno metodologico della Rivista. La sezione Confronti (monografica), che caratterizza la Rivista, in questo primo numero è dedicata a: Pontano e la guerra: il De bello Neapolitano nel suo contesto storico, ideologico e letterario. Raccoglie i contributi di Francesco Storti, Davide Morra, Fulvio Delle Donne, Guido Cappelli e Antonietta Iacono. CESURA - Rivista, 1 (2022) - intera annata (fascicoli 1 e 2) ISSN: 2974-637X ISBN: 978-88-945152-1-3, Editoriale...3-8 Pontano e la guerra: il “De bello Neapolitano” nel suo contesto storico, ideologico e letterario...9-214 Guerre senza nome e altri fantasmi...11-74 I ‘moti antifiscali’ della Guerra di successione napoletana (1458-1465): una rilettura...75-122 Il “De bello Neapolitano” di Pontano e la tradizione storiografica alla corte aragonese di Napoli...123-146 L'eloquenza del Re...147-168 La rappresentazione del nemico nel “De bello Neapolitano” di Pontano...169-214

Published
2022
Full Text
View/download PDF

37. Monoamin-Oxidase-Hemmer

Author

Gerlach, M., Riederer, P., Martin, J. R., Amrein, R., Waldmeier, P. C., Kettler, R., Borroni, E., Cesura, A., Grünblatt, E., Jorga, K., Richards, J. G., Da Prada, M., Laux, G., Becker, T., Müller, U., Bieck, P. R., Schmauss, M. P., Guentert, T. W., Reiderer, Peter, editor, Laux, Gerd, editor, and Pöldinger, Walter, editor

Published
2002
Full Text
View/download PDF

38. Flat metamorphic InAlAs buffer layer on GaAs(111)A misoriented substrates by growth kinetics control

Author

Tuktamyshev, A, Vichi, S, Cesura, F, Fedorov, A, Bietti, S, Chrastina, D, Tsukamoto, S, Sanguinetti, S, Tuktamyshev, A, Vichi, S, Cesura, F, Fedorov, A, Bietti, S, Chrastina, D, Tsukamoto, S, and Sanguinetti, S

Abstract

We have successfully grown, through the detailed control of the growth kinetics, flat InAlAs metamorphic buffer layers on 2 degrees -off GaAs(111)A substrates using molecular beam epitaxy. Almost full plastic relaxation is obtained for a layer thickness > 40 nm. The control of an adatom diffusion length and a step ejection probability from the bunches permits a reduction of the InAlAs epilayer root-mean-square surface roughness to 0.55 nm.

Published
2022

41. A 243-mW 1.25–56-Gb/s Continuous Range PAM-4 42.5-dB IL ADC/DAC-Based Transceiver in 7-nm FinFET

Author

Marco Sosio, Paolo Pascale, Roberto Giampiero Massolini, Claudio Nani, Alberto Minuti, Fernando De Bernardinis, Antonio Milani, Matteo Pisati, Giacomino Bollati, Giovanni Cesura, Enrico Pozzati, Fabio Giunco, N. Ghittori, and Marco Garampazzi

Subjects
Physics, Front and back ends, Finite impulse response, business.industry, Bandwidth (signal processing), Transmitter, Detector, Electrical engineering, Electrical and Electronic Engineering, Transceiver, business, Digital signal processing, Clock recovery
Abstract

This article presents a compact analog-to-digital converter (ADC)/digital-to-analog converter (DAC) digital signal processing (DSP)-based long reach (LR) transceiver in 7-nm FinFET technology that operates seamlessly from 3.5—56 Gb/s in pulse-amplitude modulation (PAM-4) [from 1.25 to 28 Gb/s in non-return to zero (NRZ) mode] and consumes only 243 mW at 56 Gb/s. The receiver (RX) front end consists of a two-stage continuous-time linear equalizer (CTLE), a 40-way time-interleaved (TI) successive approximation register (SAR)-ADC, a DSP equalizer containing a 17-tap feed-forward equalizer (FFE) working concurrently with a one-tap speculative decision feedback equalizer (DFE) and a reflection canceling FFE, which implements four individually roaming taps. Clock recovery is achieved on a dedicated low latency path consisting of a five-tap FFE, slicer, time error detector (TED), and loop filter driving a dedicated LC —digital-controlled oscillator (DCO). The transmit section consists of a variety of pattern generators, a five-tap finite impulse response (FIR) section, and a terminated DAC as an analog transmitter. When working on a 42.5-dB-LR channel at 56 Gb/s PAM-4, the transceiver consumes 243 mW from the 0.9-V (analog) and 0.75-V (digital) supplies, corresponding to an efficiency of 4.3 pJ/b.

Published
2020
Full Text
View/download PDF

49. Monoaminoxidase-Hemmer

Author

Gerlach, M., Riederer, P., Schoerlin, M. P., Guentert, T. W., Waldmeier, P., Kettler, R., Cesura, A., Richards, J. G., Da Prada, M., Laux, G., Becker, T., Bieck, P. R., Schmauß, M., Riederer, Peter, editor, Laux, Gerd, editor, and Pöldinger, Walter, editor

Published
1993
Full Text
View/download PDF

50. The new generation of monoamine oxidase inhibitors

Author

Cesura, Andrea M., Pletscher, Alfred, Mitsuhashi, S., Kojima, T., Nakanishi, N., Fujimoto, T., Goto, O., Miyusaki, S., Uematsu, T., Nakashima, M., Asahina, Y., Ishisaki, T., Susue, S., Hirai, K., Hoshino, K., Shimada, J., Hori, S., Singh, V. K., Pletscher, A., Tricklebank, M. D., Bristow, L. J., Hutson, P. H., and Jucker, Ernst, editor

Published
1992
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results