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Sahtecilik suçlarında amaçlanan bireyler tarafından doğru olarak kabul edilen ve içeriğine güven duyulan belgeler kullanılarak diğer kişilerin ve kurumların aldatılmasının cezalandırılmasıdır. Bu suç türünde korunan hukuki yarar, kamu güvenidir. Sahtecilik suçlarını kavrayabilmek için, belge kavramının tanımlanması önemlidir. Belge, taşınabilecek durumda ve dayanaklı bir cismin üzerine yazılan, düzenleyen kişinin belirlenebilir olduğu, hukuken değeri bulunan bir irade açıklamasını veya olayı ispatlamaya olanaklı yazıdır. Belge türleri ise özel belge, resmi belge ve resmi belge kuvvetinde kabul edilen belgelerdir. Resmi belge olabilmesi için, belgeyi düzenleyen kişinin, memur olması ve belgenin, kamu görevlisinin görevi kapsamında düzenlenmiş olması gerekmektedir. Sahtecilik suçlarında resmi belge kuvvetinde kabul edilen belgeler Türk Ceza Kanununda gösterilmiştir. Özel belge ise, resmi belge ve resmi belge kuvvetinde kabul edilen belgeler dışındaki belgelerdir.

Within the research in bilayer tunneling field-effect transistors (TFETs) exploiting interband tunneling phenomena with tunneling directions aligned with gate-induced electric fields, simulation results for the heterogate electron–hole bilayer TFET (HG-EHBTFET) showed that this type of devices succeeded in suppressing the parasitic tunneling leakage currents appearing in EHBTFETs as a result of the variable quantization strength inside the channel. In this paper, and conversely to standard approaches with entirely intrinsic channels, we investigate the possibility of modulating the band-to-band tunneling (BTBT) distance by acting on the subband discretization profiles through partially doped channels. We also analyze the impact of this pocket doping inside the channel on the occupancy probabilities involved in the BTBT processes in a germanium HG-EHBTFET.

Tunnel FETs (TFETs) are in the way to become an alternative to conventional MOSFETs due to the possibility of achieving low subthreshold swing combined with small OFF current levels, which allows operation at low $V_{\mathrm {DD}}$ . In this paper, a nonlocal band-to-band tunneling model has been successfully implemented into a multisubband ensemble Monte Carlo (MS-EMC) simulator and applied to ultrascaled silicon-based n-type TFETs. We have considered two different criteria for the choice of the tunneling path followed by the carriers when crossing the potential barrier, which leads to different distributions of the generated electron–hole pairs. Subband discretization due to field–induced quantum confinement has been considered. TCAD simulations accounting for quantization effects are considered for comparison purposes providing a very accurate agreement with MS-EMC results.

This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both ${I}$ – ${V}$ and ${G}$ – ${V}$ characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear onset of the output characteristics, and the temperature dependence. Experimental calibration on long channel (350 nm) complementary n- and p-type sSi NW TFETs has been performed to create the model, which is used to systematically benchmark the main analog figures of merit at device level: ${g}_{m}/{I}_{\text {d}}$ , ${g}_{m}/{g}_{ds}$ , ${f}_{T}$ and ${f}_{T}/{I}_{d}{V}_{d}$ , and their temperature dependence from 25 °C to 125 °C. This allows for a direct comparison between 28-nm low-power Fully Depleted Silicon on Insulator (FD-SOI) CMOS node and 28-nm double-gate (DG) TFET. We demonstrate unique advantages of sSi DG TFET over CMOS, in terms of: 1) reduced temperature dependence of subthreshold swing; 2) higher transconductance per unit of current with peaks close to $40~\text {V}^{-1}$ , for currents lower than 10 nA/ $\mu \text{m}$ ; and 3) higher unity gain frequency per unit power for currents below 10 nA/ $\mu \text{m}$ .

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO2) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing.

Bu çalışmada Konya Kapalı havzasında yer alan 17 adet sulama şebekesinin 2005-2010 yılları arası sulama sonuçlarına göre sulama sistem performansları karşılaştırmalı olarak değerlendirilmiştir. Araştırma alanında; birim sulanan alana dağıtılan yıllık sulama suyu miktarı 951 - 63.441 m³/ha, yıllık su temini oranı 0,39 - 13,63, sulama oranı %7 - 100, birim alana düşen toplam işletme-bakım-yönetim masrafı 1,95 -346,54 TL/ha, yıllık toplam tarımsal üretim değeri 233.935,21 - 248.721.406,15 TL, birim sulama alanına karşılık elde edilen gelir 205,75 - 6.931,46 TL/ha, sulanan birim alana karşılık elde edilen gelir 1.973,44 - 11.453,02 TL/ha, şebekeye alınan birim sulama suyuna karşılık elde edilen gelir 0,11 - 4,78 TL/m³, tüketilen birim sulama suyuna karşılık elde edilen gelir 0,68 – 2,39 TL/m³ olarak bulunmuştur. In this study, irrigation system performances of 17 irrigation schemes in Konya Closed Basin during 2005-2010 were evaluated according to irrigation results. In the research field; The annual amount of irrigation water distributed to the unit irrigation area was 951 - 63.441 m³/ha, annual water supply rate was 0,39 - 13,63, irrigation rate was %7100, total operating-maintenance-operation cost was between 1,95 - 346,54 TL/ha, annual total agricultural production value was 233.935,21 - 248.721.406,15 TL, irrigation area income per unit was 205,75 - 6.931,46 TL/ha, income per irrigated unit area was 1.973,44 - 11.453,02 TL/ha, the income obtained for the irrigation water taken into the scheme was 0,11 - 4,78 TL/m³ and the income for the unit irrigation water consumed was 0,68 - 2,39 TL/m³. 67

Adil yargılanma hakkı insanlık tarihi boyunca ulusal ve uluslararası birçok hukuki ve siyasi belgede koruma altına alınan en temel insan haklarından biridir. Adil yargılama, yargılama makamları tarafından bir yükümlülük iken kişiler bakımından ise haktır. Adil yargılanma hakkı ve bu hakkın unsurları Türk hukuk sistemimizde Anayasamızda da düzenlenerek koruma altına alınmıştır. Avrupa İnsan Hakları Sözleşmesi'nde düzenlenen adil yargılanma hakkının temel unsurları yasayla kurulmuş bağımsız ve tarafsız yargı yeri önünde yargılanma hakkı, makul sürede yargılanma hakkı, aleni ve hakkaniyete uygun yargılanma hakkı ile masumiyet karinesidir. Ayrıca ceza yargılamasında sanıklara tanınan asgari güvenceler de bu hakkın doğrudan bir diğer unsurudur. Bireylerin hukuk düzeni içerisinde doğuştan sahip oldukları ve sonradan kazandıkları hakların korunmasının en temel güvencesi, hukuk devleti ilkesinde yargılamaların adil bir şekilde yürütülmesidir. Avrupa İnsan Hakları Mahkemesi'ne yapılan başvurular incelendiğinde başvurucuların en çok `Adil Yargılanma Hakkı`nın ihlal edildiğinden bahisle başvurduğu görülmekte olup Türkiye aleyhine verilen kararlarda da bu hakkın ihlal edildiği görülmektedir. Bireysel başvuru yolunun Anayasal bir düzenleme ile yürürlüğe girmesinin ardından ve ayrıca iç hukuk sisteminde yapılan ve yapılması planlanan iyileştirici, yargılamayı hızlandırıcı, eşitliği ve yargı bağımsızlığını amaçlayan düzenlemeler sayesinde Türkiye aleyhine verilen ihlal kararlarının azalması ve demokratik hukuk devletinin bir gereği olarak hukuk güvenliğinin bireylerce özümsenmesi beklenmektedir.Anahtar Kelimeler: Adil Yargılanma, Adil Yargılanma Hakkı, Avrupa İnsan Hakları Sözleşmesi, Avrupa İnsan Hakları Mahkemesi, Anayasa Mahkemesi, Bireysel Başvuru The right to a fair trial is one of the most fundamental human rights in the national and international legal and political documents that have been protected throughout human history. Fair trial is an obligation in terms of judicial authorities whereas Fair trial is a right in terms of persons. The right to a fair trial and the elements of this right have been protected by the Constitution in our Turkish Legal System. The fundamental elements of the right to a fair trial in the European Convention on Human Rights are the right to be entitled to a fair and public hearing within a reasonable time by an independent and impartial tribunal established by law and presumption of innocence. Besides the minimum guarantees granted to the defendants in criminal proceedings are another direct element of this right. The most fundamental assurance of the protection of the rights that individuals have innate and subsequently gained in the legal order is the fair execution of the proceedings within the framework of principle of the state of law. When the applications to the European Court of Human Rights are examined, the applicants often refer to the claim that the right to a fair trial is violated. The determination of the violation of this right is also observed in the decisions given against Turkey. After the right to individual application has entered into force with a constitutional regulation and by means of completed or planned regulations under the national legal system aimed at accelerating judicial processes, equality and judicial independence, it is expected to reduce the number of decisions of violations against Turkey and to absorb the law security by individuals as a requirement of the state of democratic law.Keywords: Fair Trial, Right to a Fair Trial, European Convention on Human Rights, European Court of Human Rights, Constitutional Court, Individual Application. 139

Switching behavior in electron–hole bilayer tunnel FETs is known to be unaffected by the subthreshold swing limitation of 60 mV/decade imposed by thermal injection, due to the band-to-band tunneling phenomena on which they rely. However, in this paper, we show that, once parasitic lateral tunneling processes are suppressed by means of heterogate configurations, a new physical limitation arises at the onset of tunneling in this type of transistors, resulting from the interplay between field-induced quantum confinement and asymmetric concentrations of electrons and holes inside the channel. We demonstrate that this limitation comes from the fact that, regardless of the band profile sharpness, the tunneling distance at subband alignment cannot be reduced beyond a certain limit, which we find to be dependent on the body thickness and the material properties.

An extensive parameter analysis is performed on the electron–hole bilayer tunnel field-effect transistor (EHBTFET) using a 1-D effective mass Schrodinger–Poisson solver with corrections for band non-parabolicity considering thin InAs, In0.53Ga0.47As, Ge, Si0.5Ge0.5, and Si films. It is found that depending on the channel material and channel thickness, the EHBTFET can operate either as a 2-D–2-D or 3-D–3-D tunneling device. InAs offers the highest $I_{\mathrm{\scriptscriptstyle ON}}$ , whereas for the Si and Si0.5Ge0.5 EHBTFETs, significant current levels cannot be achieved within a reasonable voltage range. The general trends are explained through an analytical model that shows close agreement with the numerical results.

Quantum mechanical confinement in electron–hole bilayer tunnel field-effect transistors (EHBTFETs) affects in a substantial way the band-to-band tunneling (BTBT) mechanism that constitutes their operating principle. Field-induced quantization is known to set off effective bandgap widening phenomena—with the subsequent BTBT probability reduction that it entails—and to give rise to harmful parasitic tunneling processes. Both of these effects degrade the potential steep switching behavior of bilayer TFETs. In this paper, we show that the novel FinEHBTFET proves to be a promising structure for its scalability potential and propose a solution to alleviate the impact on it of quantum confinement, as well as to suppress the parasitic tunneling processes that show up when quantization is considered. Moreover, we demonstrate for different fin materials that the utilization of asymmetric configurations delaying the formation of electron inversion layers allows us to boost $I_{\mathrm{\scriptscriptstyle ON}}$ levels.

In the roadmap for the optimization of Electron-Hole Bilayer Tunneling Field-Effect Transistors (EHBTFETs), the employment of III-V compounds is regarded as an appealing solution due to their direct band-to-band tunneling injection. In order to achieve both n and p acceptable operation channels, the combination of As- and Sb-based III-V materials leads to the proposal of a heterosturcture InAs/GaSb-EHBTFET. In this paper, we analyze the impact that the required ultrathin InAs layers have on the electron effective mass and, subsequently, on the device performance.

Bu çalışmanın temel amacı, `CAKAY C.A.A.-89` iyontoforetik cihaz olarak adlandırılan cihazın, etken madde seçilen `lidokainin` sıçan derisinden geçirilerek deri altına iletimi için tasarlanmasıdır. Bu çalışmanın güvenilir olduğunu kanıtlamış olduk ve akım olmayan bir uygulama olan kontrol grubu ile akım uygulanan diğer parametreleri karşılaştırıldığında sonucun arttığını görmüş olduk. Sıçan plazmasında Lidokain miktarı incelendiğinde kontrol grubu ve iyontoforetik uygulama arasında istatistiksel olarak anlamlı bir farklılık olduğunu gördük; p

We investigate the effect of asymmetric configurations on the heterogate germanium electron–hole bilayer tunnel FET (TFET) and assess the improvement that they provide in terms of boosting the typically very low ON-current levels of TFET devices in the presence of field-induced quantum confinement. We show that when a very strong inversion for holes is induced at the bottom of the channel, the formation of the inversion layer for electrons is shifted to higher gate voltages, which in turn enhances the electrostatic control of the band bending at the top of the channel. As a result, the pinning of the quantized energy subbands is prevented for a wider range of gate voltages, and this allows vertical band-to-band tunneling distances to be further reduced compared with the conventional symmetric electron–hole bilayer configurations.

The electron-hole bilayer tunnel (EHBTFET). has been proposed as a density of states (DOS) switch capable of achieving a subthreshold slope lower than 60mV/decade at room temperature; however, one of the main challenges is the control of the lateral band-to-band tunneling (BTBT) leakage in the OFF state. In this work, we show that by using oppositely doped underlap regions; the unwanted penetration of the wavefunction into the underlap region at low gate biases is prevented; thereby drastically reducing the lateral BTBT leakage without any penalty on the ON current. The method is verified using a full-quantum 2D Schrodinger-Poisson solver under the effective mass approximation. For a channel thickness of 10 nm, an In0.53Ga0.47As EHBTFET with counterdoping can exhibit an ON-current up to 20 mu A/mu m and an average subthreshold swing (SS) of about 30 mV/dec. Compared to previous lateral leakage suppression solutions, the proposed method can be fabricated using template-assisted selective epitaxy.

In this work we extend an effective mass model for computing the drain current of tunnel-FETs to account for the anti-crossing of the light- and heavy-hole branches of the valence band. The model is validated by comparison with NEGF simulations based on a k · p Hamiltonian. Application of the new model to the electron-hole bilayer TFET is provided showing that the inclusion of the asymmetry of the real and imaginary branches of the hole dispersion relation is critical in determining the device characteristics.

In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wave-function (WF) and density of states (DOS) corrections for both charge and BTBT current calculation. Comparison against more advanced full-quantum simulators based on TB and k ·p Hamiltonians is presented as well and indicates very good matching between models for simple tunnel diodes. An initial parameter study of the Electron Hole Bilayer TFET (EHBTFET) indicates the presence of an optimum channel thickness, determined by the interplay between the subband alignment voltage and ON current level. © 2015 IEEE.

The research field on tunnel-FETs (TFETs) has been rapidly developing in the last ten years, driven by the quest for a new electronic switch operating at a supply voltage well below 1 V and thus delivering substantial improvements in the energy efficiency of integrated circuits. This paper reviews several aspects related to physics based modeling in TFETs, and shows how the description of these transistors implies a remarkable innovation and poses new challenges compared to conventional MOSFETs. A hierarchy of numerical models exist for TFETs covering a wide range of predictive capabilities and computational complexities. We start by reviewing seminal contributions on direct and indirect band-to-band tunneling (BTBT) modeling in semiconductors, from which most TCAD models have been actually derived. Then we move to the features and limitations of TCAD models themselves and to the discussion of what we define non-self-consistent quantum models, where BTBT is computed with rigorous quantum-mechanical models starting from frozen potential profiles and closed-boundary Schrodinger equation problems. We will then address models that solve the open-boundary Schrodinger equation problem, based either on the non-equilibrium Green's function NEGF or on the quantum-transmitting-boundary formalism, and show how the computational burden of these models may vary in a wide range depending on the Hamiltonian employed in the calculations. A specific section is devoted to TFETs based on 2D crystals and van der Waals hetero-structures. The main goal of this paper is to provide the reader with an introduction to the most important physics based models for TFETs, and with a possible guidance to the wide and rapidly developing literature in this exciting research field.

In this work, the conformal mapping technique is applied to obtain an analytical closed form solution of the 2D Poisson’s equation for a double-gate Tunnel FET. The generated band profiles are accurate in all regions of device operation. Furthermore, the current levels are estimated by implementing the non-local band-to-band tunneling model from Synopsys Sentaurus TCAD. A good agreement with simulations for varying device parameters is demonstrated and the advantages and limitations of the new modeling approach are investigated and discussed.

This paper overviews the physics and promised performance of electron hole bilayer TFETs (EHBTFET) as deep subthermal electronic switch for ultra-low voltage operation. We provide a first complete roadmap for optimizing its design for combined high performance and low leakage. Based on advanced quantum mechanical (QM) simulation methods, it is shown that the major issue with the EHBTFET is the wavefunction (WF) penetration into the underlap region. Various solutions with different varying complexity are proposed and it is shown that steep slope (SS≪60mV/dec) over a few decades of drain current can be attained using these solutions..

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of the Schrodinger and Poisson equations, using the Finite Element Method followed by tunneling current (direct and phonon assisted) calculation in post-processing. The quantum mechanical model is applied to Germanium electron hole bilayer tunnel FETs (EHBTFET). It is found that 2D direct tunneling through the underlap regions may degrade the subthreshold characteristic of such devices and requires careful device optimization to make the tunneling in the overlap region dominate over the parasitic paths. It is found that OFF and ON state currents for the EHBTFET can be classified as point and line tunneling respectively. Oxide thickness was found to have little impact on the magnitude of the ON current, whereas it impacts the OFF current. (C) 2015 Elsevier Ltd. All rights reserved.

The electron-hole bilayer tunnel field-effect transistor (EHBTFET) is an electronic switch that uses 2-D-2-D sub-band-to-sub-band tunneling (BTBT) between electron and hole inversion layers and shows significant subthermal swing over several decades of current due to the step-like 2-D density of states behavior. In this paper, EHBTFET has been simulated using a quantum mechanical model. The model results are compared against transactions on computer-aided design simulations and remarkable differences show the importance of quantum effects and dimensionality in this device. Ge EHBTFET with channel thickness of 10 nm results as a promising device for low supply voltage, subthreshold logic applications, with a super steep switching behavior featuring SSavg similar to 40 mV/dec up to V-DD. Furthermore, it has been demonstrated that high ON current levels (similar to 40 mu A/mu m) can be achieved due to the transition from phonon-assisted BTBT to direct BTBT at higher biases.

In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron–hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement.

Tunneling Field Effect Transistors (TFET) are promising devices to respond to the demanding requirements of future technology nodes. The benefits of the TFETs are linked to their sub-60mV/decade sub-threshold swing, a prerequisite for scaling the supply voltage well below 1V. Main research efforts are currently dedicated to improving the on current (I ON ) level in a TFET. However, from the circuit point of view the device capacitances are equally important. It is known that the drain-to-gate capacitance in a TFET is almost equal to the gate capacitance in moderate and strong inversion regimes. Due to enhanced Miller Effect [1], they are known to exhibit large over/undershoot in transient operation as compared to CMOS. Therefore, the effort on improving I ON should be simultaneous to an effort of reducing the Miller capacitance (C MILLER ). This work proposes a new architecture which addresses both these issues.

Keywords: band-to-band tunneling ; heterogate electron-hole bilayer tunnel field-effect transistor ; quantum confinement ; inversion layer formation Reference EPFL-ARTICLE-208004doi:10.1063/1.4905866View record in Web of Science Record created on 2015-05-26, modified on 2016-08-09

The analysis of quantum mechanical confinement in recent germanium electron–hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that constitutes the operating principle of these devices. The vertical electric field that appears across the intrinsic semiconductor to give rise to the bilayer configuration makes the formerly continuous conduction and valence bands become a discrete set of energy subbands, therefore increasing the effective bandgap close to the gates and reducing the BTBT probabilities. In this letter, we present a simulation approach that shows how the inclusion of quantum confinement and the subsequent modification of the band profile results in the appearance of lateral tunneling to the underlap regions that greatly degrades the subthreshold swing of these devices. To overcome this drawback imposed by confinement, we propose an heterogate configuration that proves to suppress this parasitic tunneling and enhances the device performance.

We investigate the effect of pseudo-bilayer configurations at low operating voltages (

Aggressive scaling of the supply voltage reduces the energy needed for switching of standard CMOS devices. However, advanced CMOS technologies are facing two main problems that consequently lead to higher power consumption: the complexity of a further supply voltage reduction, and the rising leakage currents that directly affect the switching ratio between the ON and OFF states. At present, the available field-effect transistors (FETs) in the CMOS integrated circuits require at room temperature at least 60 mV of gate voltage to increase the current by one order of magnitude. Recent publications have highlighted the need for alternative devices providing better ON-OFF switching performance. Tunneling FETs are very promising devices to respond to the demanding requirements of future scaled silicon technology nodes. The paper reviews recent compact modeling of homojunction TFET devices.

Electron–Hole Bilayer Tunneling Field-Effect Transistors are typically based on band-to-band tunneling processes between two layers of opposite charge carriers where tunneling directions and gate-induced electric fields are mostly aligned (so-called line tunneling). However, the presence of intense electric fields associated with the band bending required to trigger interband tunneling, along with strong confinement effects, has made these types of devices to be regarded as theoretically appealing but technologically impracticable. In this work, we propose an InAs/GaSb heterostructure configuration that, although challenging in terms of process flow design and fabrication, could be envisaged for alleviating the electric fields inside the channel, whereas, at the same time, making quantum confinement become the mechanism that closes the broken gap allowing the device to switch between OFF and ON states. The utilization of induced doping prevents the harmful effect of band tails on the device performance. Simulation results lead to extremely steep slope characteristics endorsing its potential interest for ultralow power applications.

In conventional planar EHBTFETs, the interband tunneling phenomena responsible for the drive current takes place vertically in the section of the channel where top and bottom gates overlap. As a result, the horizontal extent of this overlapping between gates is the limiting factor for both the available band-to-band tunneling area and the occupied wafer space. Hence, any design seeking to increase the horizontal size of the device for boosting the ON current levels would not allow for a restrained surface occupation. In contrast with this, the FinEHBTFET is a very promising structure in terms of scalability due to the decoupling between the tunneling area and the required space in the wafer. However, harmful quantum mechanical confinement effects, such as the appearance of parasitic tunneling leakage contributions, need to be assessed in this type of devices in order to quantify their importance and minimize their impact on the device performance.

In this paper we will present and discuss the potential of steep slope transistors to serve at cryogenic temperature: (i) the electronic design that is needed for qubit error correction and/or interfacing and (ii) to serve as ultra-sensitive charge detectors and potentially replace single electron transistors and/or CMOS for certain electronic functions. We suggest that among the various categories of steep slope devices, the heterojunction tunnel FETs compatible with CMOS platforms form a class of device candidates capable to play an important role in the future quantum computing (QC) down to cryogenic temperatures. The paper will investigate and discuss the potential merits of these devices.

We propose and validate a novel design methodology for logic circuits that exploits the conduction mechanism and the presence of two independently biased gates (“n-gate” and “p-gate”) of the electron-hole bilayer tunnel field-effect transistor (EHBTFET). If the device is designed to conduct only under certain conditions, e.g., when Vn-gate = VDD and Vp-gate = 0, it then shows an “XOR-like” behavior that allows the implementation of certain logic gates with a smaller number of transistors compared to conventional CMOS static logic. This simplifies the design and possibly results in faster operation due to lower node capacitances. We demonstrate the feasibility of the proposed EHBTFET logic for low supply voltage operation using mixed device/circuit simulations including quantum corrections.