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866 results on '"Caymax, M."'

1. Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon

Author

Gasseller, M., Loo, R., Harrison, J. F., Caymax, M., Rogge, S., and Tessmer, S. H.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe methods to discern the properties of individual dopants tens of nanometers below the surface of a silicon sample. Using a capacitance-based approach, we have both spatially-resolved individual subsurface boron acceptors and detected spectroscopically single holes entering and leaving these minute systems of atoms. A resonance identified as the B+ state is shown to shift in energy from acceptor to acceptor. We examine this behavior with respect to nearest-neighbor distances. By directly measuring the quantum levels and testing the effect of dopant-dopant interactions, this method represents a valuable tool for the development of future atomic-scale semiconductor devices., Comment: 17 pages (main text is 5 pages), 3 figures and 4 supplementary figures

Published
2009

2. Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern

Author

Brammertz, G., Caymax, M., Mols, Y., Degroote, S., Leys, M., Van Steenbergen, J., Winderickx, G., Borghs, G., and Meuris, M.

Subjects
Condensed Matter - Materials Science
Abstract

We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is fully selective, thanks to an optimized growth procedure, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by low pressure growth of GaAs. This growth procedure inhibits the nucleation of GaAs on the mask area and is a good compromise between reduction of loading effects and inhibition of anti phase domain growth in the GaAs. Nevertheless, both microscopic and macroscopic loading effects can still be observed on x-section SEM images and profilometer measurements. X-ray diffraction and low temperature photoluminescence measurements demonstrate the good microscopic characteristics of the selectively grown GaAs., Comment: 7 pages, 6 figures

Published
2007

5. Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates

Author

Meuris, M., De Jaeger, B., Van Steenbergen, J., Bonzom, R., Caymax, M., Houssa, M., Kaczer, B., Leys, F., Martens, K., Opsomer, K., Pourghaderi, A. M., Satta, A., Simoen, E., Terzieva, V., Van Moorhem, E., Winderickx, G., Loo, R., Clarysse, T., Conard, T., Delabie, A., Hellin, D., Janssens, T., Onsia, B., Sioncke, S., Mertens, P. W., Snow, J., Van Elshocht, S., Vandervorst, W., Zimmerman, P., Brunco, D., Raskin, G., Letertre, F., Akatsu, T., Billon, T., Heyns, M., Itoh, Kiyoo, editor, Lee, Thomas, editor, Sakurai, Takayasu, editor, Sansen, Willy M. C., editor, Schmitt-Landsiedel, Doris, editor, Dimoulas, Athanasios, editor, Gusev, Evgeni, editor, McIntyre, Paul C., editor, and Heyns, Marc, editor

Published
2007
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11. Direct and indirect optical transitions in bulk and atomically thin MoS2 studied by photoreflectance and photoacoustic spectroscopy.

Author

Kopaczek, J., Zelewski, S. J., Polak, M. P., Kudrawiec, R., Gawlik, A., Chiappe, D., Schulze, A., and Caymax, M.

Subjects
OPTICAL transient phenomena, PHOTOREFLECTANCE, PHOTOACOUSTIC spectroscopy, ELECTRONIC band structure, SEMICONDUCTOR materials, QUASIMOLECULES, OPACITY (Optics)
Abstract

Optical transitions in atomically thin MoS2 samples made by sulfidation of a metallic molybdenum layer have been studied by photoreflectance (PR) and photoacoustic (PA) spectroscopy. The obtained spectra are compared with PR and PA spectra of bulk MoS2. It is shown that the absorption edge observed in the PA spectrum shifts to blue when moving from the bulk MoS2 to the atomically thin MoS2 layers, whereas the direct optical transitions at the K point of the Brillouin zone (A and B transitions), which are observed in the PR spectrum, do not shift spectrally in a significant manner. On the other hand, the AH transition, which is related to the direct optical transition at the H point of the Brillouin zone and is typical of bulk MoS2, is not observed for atomically thin MoS2 layers. Moreover, a strong and broad PR resonance related to the band nesting (C transition) is identified in the PR spectra of studied samples. In this case, C and CH transitions are observed for bulk MoS2, while only a C transition is observed for atomically thin MoS2. [ABSTRACT FROM AUTHOR]

Published
2019
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12. Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature.

Author

Groven, B., Claes, D., Nalin Mehta, A., Bender, H., Vandervorst, W., Heyns, M., Caymax, M., Radu, I., and Delabie, A.

Subjects
CHEMICAL vapor deposition, LOW temperatures
Abstract

Monolayer-thin WS2 with (0002) texture grows by chemical vapor deposition (CVD) from gas-phase precursors WF6 and H2S at a deposition temperature of 450 °C on 300 mm Si wafers covered with an amorphous Al2O3 starting surface. We investigate the growth and nucleation mechanism during the CVD process by analyzing the morphology of the WS2 crystals. The CVD process consists of two distinct growth regimes. During (i) the initial growth regime, a fast and self-limiting reaction of the CVD precursors with the Al2O3 starting surface forms predominantly monolayer-thin WS2 crystals and AlF3 crystals that completely cover the starting surface. During (ii) the steady-state growth regime, a much slower, anisotropic reaction on the bottom, first WS2 layer proceeds with the next WS2 layer growing preferentially in the lateral dimensions. We propose that the precursor adsorption reaction rate strongly diminishes when the precursors have no more access to the Al2O3 surface as soon as the WS2 layer completely covers the Al2O3 surface and that the WS2 crystal basal planes and AlF3 crystals have a low reactivity for WF6 adsorption at 450 °C. Nonetheless, a second layer of WS2 starts to form before the first WS2 layer completely covers the starting surface, albeit the surface coverage of the second layer is low (<20%, after 25 min of CVD reaction). During the steady-state growth regime, predominantly the WS2 crystals in the second monolayer continue to grow in lateral dimensions up to ∼40 nm. These crystals reach larger lateral dimensions compared to the crystals in the bottom, first layer due to low reactivity for WF6 adsorption on the WS2 basal plane compared to Al2O3. Presumably, they grow laterally by precursor species that adsorb on and diffuse across the WS2 surface, before being incorporated at the more reactive edges of the WS2 crystals in the second layer. Such a process proceeds slowly with only up to 40% surface coverage of the second WS2 layer after 150 min of CVD reaction. The CVD reaction is mediated by the starting surface: WF6 precursor preferentially adsorbs on Al2O3, whereas adsorption is not observed on SiO2. Nevertheless, WS2 grows on SiO2 in close proximity to Al2O3 in 90 nm pitch Al2O3/SiO2 line patterns. Hence, functionalization of the starting surface (e.g., SiO2 with Al2O3) can provide opportunities to grow monolayer-thin WS2 crystals at predetermined locations by selective, lateral growth with tunable crystal size, even at low deposition temperatures. [ABSTRACT FROM AUTHOR]

Published
2019
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40. Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers

Author

Escobedo-Cousin, E., Olsen, S.H., Dobrosz, P., Bull, S.J., O'Neill, A.G., Coulson, H., Claeys, C., Loo, R., Delhougne, R., and Caymax, M.

Subjects
Annealing -- Research, Physics
Abstract

The structural reaction of sub- and supercritical thickness-strained Si layers on novel thin SiGe strain-relaxed buffers (SRBs) during high-temperature annealing used in fabrication is examined. The defects have originated from localized threading dislocations assisted by further strain relaxation in the metastable strains Si layers.

Published
2007

47. Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab

Author

Asselberghs, I., primary, Smets, Q., additional, Schram, T., additional, Groven, B., additional, Verreck, D., additional, Afzalian, A., additional, Arutchelvan, G., additional, Gaur, A., additional, Cott, D., additional, Maurice, T., additional, Brems, S., additional, Kennes, K., additional, Phommahaxay, A., additional, Dupuy, E., additional, Radisic, D., additional, de Marneffe, J-F, additional, Thiam, A., additional, Li, W., additional, Devriendt, K., additional, Huyghebaert, C., additional, Lin, D., additional, Caymax, M., additional, Morin, P., additional, and Radu, I.P., additional

Published
2020
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