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22 results on '"Cavus, Abdullah"'

4. Low-Noise MMIC Amplifiers for 120 to 180 GHz

Author

Pukala, David, Samoska, Lorene, Peralta, Alejandro, Bayuk, Brian, Grundbacher, Ron, Oliver, Patricia, Cavus, Abdullah, and Liu, Po-Hsin

Subjects
Technology Utilization And Surface Transportation
Abstract

Three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifiers capable of providing useful amounts of gain over the frequency range from 120 to 180 GHz have been developed as prototype low-noise amplifiers (LNAs) to be incorporated into instruments for sensing cosmic microwave background radiation. There are also potential uses for such LNAs in electronic test equipment, passive millimeter- wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The main advantage afforded by these MMIC LNAs, relative to prior MMIC LNAs, is that their coverage of the 120-to-180-GHz frequency band makes them suitable for reuse in a wider variety of applications without need to redesign them. Each of these MMIC amplifiers includes InP transistors and coplanar waveguide circuitry on a 50- mthick chip (see Figure 1). Coplanar waveguide transmission lines are used for both applying DC bias and matching of input and output impedances of each transistor stage. Via holes are incorporated between top and bottom ground planes to suppress propagation of electromagnetic modes in the substrate. On the basis of computational simulations, each of these amplifiers was expected to operate with a small-signal gain of 14 dB and a noise figure of 4.3 dB. At the time of writing this article, measurements of noise figures had not been reported, but on-chip measurements had shown gains approaching their simulated values (see Figure 2).

Published
2009

5. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

Author

Radisic, Vesna, Sawdai, Donald, Scott, Dennis, Deal, William, Dang, Linh, Li, Danny, Cavus, Abdullah, To, Richard, and Lai, Richard

Subjects
Electronics And Electrical Engineering
Abstract

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

Published
2009

11. A 0.25 $\mu$m InP DHBT 200 GHz+ Static Frequency Divider

Author

D'Amore, Matt, primary, Monier, Cedric, additional, Lin, Steven Taiyu, additional, Oyama, Bert, additional, Scott, Dennis W., additional, Kaneshiro, Eric N., additional, Chang, Ping-Chih, additional, Sato, Kenneth F., additional, Niemi, Alex, additional, Dang, Linh, additional, Cavus, Abdullah, additional, Gutierrez-Aitken, Augusto, additional, and Oki, Aaron K., additional

Published
2010
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12. Advanced InP HBT Technology at Northrop Grumman Aerospace Systems

Author

Gutierrez-Aitken, Augusto, primary, Monier, Cedric, additional, Chang, Pablo, additional, Kaneshiro, Eric, additional, Scott, Dennis, additional, Chan, Beckie, additional, D'Amore, Matt, additional, Lin, Steven, additional, Oyama, Bert, additional, Sato, Ken, additional, Cavus, Abdullah, additional, and Oki, Aaron, additional

Published
2009
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20. A 0.25 \mum InP DHBT 200 GHz+ Static Frequency Divider.

Author

D'Amore, Matt, Monier, Cedric, Lin, Steven Taiyu, Oyama, Bert, Scott, Dennis W., Kaneshiro, Eric N., Chang, Ping-Chih, Sato, Kenneth F., Niemi, Alex, Dang, Linh, Cavus, Abdullah, Gutierrez-Aitken, Augusto, and Oki, Aaron K.

Abstract

Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25\,\mu\ m 530\,GHz f T/600\,GHz+ f \max InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6 GHz refid="ref1"/ . The divide-by-two core flip-flop dissipates 228 mW. Techniques used for the divider design optimization and for selecting variants to maximize performance across process changes are also discussed. [ABSTRACT FROM PUBLISHER]

Published
2010
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21. Role of Dislocations in Hydrogen-Induced Exfoliation of Narrow Bandgap Semiconductors

Author

Noori, Atif, Hayashi, Sumiko L., Goorsky, Mark, Sandhu, Rajinder, Cavus, Abdullah, and, Gambin, and Gutierrez, Augusto

Abstract

To investigate the role of dislocations in the exfoliation process, metamorphic buffer layers were implanted with a dose of 1.5E16 H2+/cm2 at an energy of 150 KeV. Two profiles were examined: a compositionally graded InxAl1-xAs buffer layer grown by molecular beam epitaxy on InP with an InAs cap layer (TD density = 5E6 cm-2) and an InAs layer grown directly on InP (TD density = 4E8 cm-2). Subsequent annealing of these implanted structures at 150{degree sign}C for 10 minutes caused interstitial hydrogen to diffuse away from the implanted region and settle at low energy sites - strained regions around dislocations. 5 hours annealing at 75{degree sign}C produced uniform surface blistering for both samples at the implantation depth. This effect is explained by the increased diffusivity of hydrogen at higher temperatures.

Published
2006

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