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Your search keyword '"Caulet, J."' showing total 108 results
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108 results on '"Caulet, J."'

1. Highly efficient collective coupling between laser diode array and lensed fibre ribbon

Author

Chanclou, P, Thual, Monique MT, Lostec, J, Auvray, P, Caulet, J, Joulié, G, Poudoulec, A, and Clavel, B

Subjects
Physics - Optics, Physics - Applied Physics
Abstract

A new concept is proposed for lensed fibres fabricated according to a collective and low cost process. This process is based on the cleaving and splicing of optical fibre ribbons and is suitable for the coupling of laser diode arrays and fibre ribbons.

Published
2024

3. Metallurgical study of Ni/GaSb (111) and (001) contacts: comparison with the Ni/GaAs and Ni/AIAs systems

Author

Guivarc'h, A., Caulet, J., Minier, M., Clanche, M.C. Le, Deputier, S., and Guerin, R.

Subjects
Thin films -- Research, Phase diagrams -- Analysis, Physics
Abstract

An epitaxial ternary phase on GaSb(111) and (001) are formed by the interaction of a nickel thin film with a GaSb substrate. This ternary phase is not in equilibrium with GaSb and the mixture of grains of Ni2Ga3 and Ni2Ga0.25Sb1.75 are obtained by an increased interaction of the substrates. Ni-Ga-Sb phase diagram is determined experimentally to explain interfacial reaction of Ni contacts on GaSb. Three equivalent systems Ni/GaAs, Ni/AlAs and Ni/GaSb are compared.

Published
1994

4. ErSb/GaSb(001) and GaSb/ErSb/GaSb(001) heterostructures and (ErSb,GaSb) superlattices: molecular beam epitaxy growth and characterization

Author

Guivarc'h A., Ballini, Y., Toudic, Y., Minier, M., Auvray, P., Guenais, B., Caulet, J., Merdy, Le B., Lambert, B., and Regreny A.

Subjects
Superlattices as materials -- Design and construction, Physics
Abstract

ErSb(001) single crystal layers are grown on GaSb(001) substrates and investigated by the reflection high-energy electron diffraction method. The diffraction patterns exhibit a 4 by 4 surface reconstruction. Low room temperature resistivity is exhibited by the ErSb crystal layers grown on the GaSb substrates.

Published
1994

5. Growth of YbSb2/GaSb(001) and GaSb/YbSb2/GaSb(001) heterostructures by molecular beam epitaxy

Author

Guivarc'h, A., Ballini, Y., Auvray, P., Caulet, J., Minier, M., Dupas, G., and Ropars, G.

Subjects
Molecular beams -- Research, Epitaxy -- Analysis, Semiconductors -- Research, Physics
Abstract

Molecular beam epitaxy is used to develop single YbSb2 crystal films on GaSb. YbSb2 films have a resistivity of 40 microomega and show metallic characteristics. Orientation of the Sb dangling bonds on the surface of GaSb affects the direction of the YbSb2 films. The influence of the lattice mismatches in the direction of growth and in the basal plane.

Published
1993

14. Double-crystal x-ray investigations of semi-insulating (Ga,Fe) double-doped InP substrates.

Author

Haji, L., Caulet, J., Auvray, P., and LeCorre, A.

Subjects
*INDIUM compounds, *X-ray diffractometers
Abstract

Presents information on a study which examined the structural perfection of the semi-insulating double-doped LEC-growtn InP substrates using x-ray double-crystal diffractometry method. Determination of the variations in lattice-plane spacings and lattice-plane orientations induced by gallium inhomogeneity; Samples and experiments; Results and discussion; Conclusions.

Published
1988
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15. ErSb/GaSb(001) and GaSb/ErSb/GaSb(001) heterostructures and [ErSb,GaSb] superlattices: Molecular beam epitaxy growth and characterization.

Author

Guivarc’h, A., Ballini, Y., Toudic, Y., Minier, M., Auvray, P., Guenais, B., Caulet, J., Le Merdy, B., Lambert, B., and Regreny, A.

Subjects
CRYSTAL growth, ERBIUM, HETEROSTRUCTURES, ANTIMONY, GALLIUM
Abstract

Focuses on a study which demonstrated the growth of erbium antimony (001) single crystal layers on gallium antimony (001) substrates. Growth and characterization of erbium antimony/gallium antimony (001) heterostructures; Growth characteristics of gallium arsenide; Superlattices of erbium antimony and gallium antimony.

Published
1994

16. Growth of YbSb2/GaSb(001) and GaSb/YbSb2/GaSb(001) heterostructures by molecular beam epitaxy.

Author

Guivarc’h, A., Ballini, Y., Auvray, P., Caulet, J., Minier, M., Dupas, G., and Ropars, G.

Subjects
THIN films, MOLECULAR beam epitaxy, NUCLEATION, GALLIUM arsenide
Abstract

Deals with the growth by molecular beam epitaxy of YbSb[sub2] (010) single crystal films on GaSb(001). Characteristics of YbSb[sub2] films; Effects of lattice mismatches on basal plane and growth direction of the crystal films; Causes of defect nucleation in gallium arsenide overgrown layers.

Published
1993

17. Metallurgical study of Ni/(Ga,Al) As contacts. III. Transmission electron microscopy characterization of ternary superstructured phases in the reacted layers.

Author

Poudoulec, A., Guenais, B., Guivarc’h, A., Caulet, J., and Guérin, R.

Subjects
NICKEL films, THIN films, GALLIUM arsenide, TRANSMISSION electron microscopy
Abstract

Presents information on a study which investigated the solid-state interactions of nickel thin films on (111) gallium arsenide and (111) AlAs using transmission electron microscopy. Characteristics of the samples; Results and discussion; Conclusions.

Published
1991
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18. Metallurgical study of Ni/GaAs contacts. II. Interfacial reactions of Ni thin films on (111) and (001) GaAs.

Author

Guivarc’h, A., Guérin, R., Caulet, J., Poudoulec, A., and Fontenille, J.

Subjects
NICKEL, BACKSCATTERING, NUCLEAR spectroscopy, X-rays, OPTICAL diffraction
Abstract

Presents a study that investigated the solid-state interactions at the nickel/gallium arsenide interfaces. Application of the Rutherford backscattering spectrometry; Analysis of X-ray diffraction; Assessment of the sheet resistance measurement results.

Published
1989

19. Pliocene carbonate accumulation along the California Margin

Author

Ravelo, A. C., Lyle, M., Koizumi, I., Caulet, J. P., ELIANA FORNACIARI, Hayashida, A., Heider, F., Hood, J., Hovan, S., Janecek, T., Janik, A., Stax, R., Yamamoto, M., and 5.2 Climate Dynamics and Landscape Evolution, 5.0 Earth Surface Processes, Departments, GFZ Publication Database, Deutsches GeoForschungsZentrum

Subjects
geography, geography.geographical_feature_category, Pliocene, Advection, Paleontology, Drilling, 550 - Earth sciences, Subtropics, Oceanography, California Current, palaeoceanography, Pacific, chemistry.chemical_compound, chemistry, Ocean gyre, carbonate accumulation, ocean heat transport, Carbonate, Upwelling, Submarine pipeline, Ocean heat content, Geology
Abstract

Recent modeling studies call on increased ocean heat transport to explain high-latitude warming observed for intervals throughout the middle Pliocene. Possible vehicles for ocean heat transport are the poleward arms of the subtropical gyres. Sites from the California margin (Ocean Drilling Program Leg 167) provide monitors of wind field within the eastern arm of the gyre which may be an indication of basin-wide subtropical gyral strength. At most sites (water depths from 1106 to 4212 m) CaCO3 mass accumulation rate (MAR) was highest in the middle Pliocene (3.5–2.0 Ma). This high CaCO3 MAR “event” is attributed primarily to higher CaCO3 production due to higher offshore upwelling associated with the zone of the greatest wind stress curl. Thus, in the middle Pliocene, there was enhanced wind stress curl along the California margin, and possibly enhanced North Pacific sub-tropical gyral circulation and meridional ocean heat advection.

Published
1997

26. Pliocene carbonate accumulation along the California Margin

Author

Ravelo, A. C., primary, Lyle, M., additional, Koizumi, I., additional, Caulet, J. P., additional, Fornaciari, E., additional, Hayashida, A., additional, Heider, F., additional, Hood, J., additional, Hovan, S., additional, Janecek, T., additional, Janik, A., additional, and Stax, R., additional

Published
1997
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46. Growth of matched metallic ErP0.6As0.4 layers on GaAs in a molecular beam epitaxy system.

Author

Le Corre, A., Caulet, J., and Guivarc’h, A.

Subjects
*METALLIC films, *GALLIUM arsenide, *MOLECULAR beam epitaxy
Abstract

Metallic layers of ErP0.6As0.4 have been grown by molecular beam epitaxy on GaAs at 500 °C. The growth has been achieved by adjusting the PH3 and AsH3 flows to obtain a good lattice match to the substrate, the erbium flux remaining below the flux of the V elements. The 10–100 nm thick epitaxial layers reproducibly showed lattice mismatch below 5×10-4 and unlike the ErAs layers, they do not degrade in the atmosphere. Due to its low resistivity (ρ=80 μΩ cm), this compound is an ideal candidate for the realization of epitaxial III-V semiconductor/metal/III-V semiconductor heterostructures. [ABSTRACT FROM AUTHOR]

Published
1989
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47. Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy.

Author

Le Corre, A., Caulet, J., Gauneau, M., Loualiche, S., L’Haridon, H., Lecrosnier, D., Roizes, A., and David, J. P.

Subjects
*BERYLLIUM, *INDIUM arsenide, *GALLIUM arsenide, *MOLECULAR beam epitaxy
Abstract

InGaAs epitaxial layers have been doped with beryllium with concentrations ranging from 1016 to 5×1019 cm-3 as measured by secondary ion mass spectroscopy (SIMS). From electrical measurements we have observed that p-type layers presented a high degree of compensation, and for a doping level below 5×10-7 cm-3, they are often found to be n type. SIMS analysis shows that oxygen is responsible for such behavior. Beryllium doping leads to incorporation of a large amount of oxygen in the epitaxial layers. Investigations on the origin of oxygen incorporation show that it is extremely sensitive to the residual vacuum during the growth and can be reduced by decreasing arsenic pressure. [ABSTRACT FROM AUTHOR]

Published
1987
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