1. Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
- Author
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Massachusetts Institute of Technology. Department of Materials Science and Engineering, Vukajlovic-Plestina, J, Kim, W, Ghisalberti, L, Varnavides, G, Tütüncuoglu, G, Potts, H, Friedl, M, Güniat, L, Carter, WC, Dubrovskii, VG, Fontcuberta i Morral, A, Massachusetts Institute of Technology. Department of Materials Science and Engineering, Vukajlovic-Plestina, J, Kim, W, Ghisalberti, L, Varnavides, G, Tütüncuoglu, G, Potts, H, Friedl, M, Güniat, L, Carter, WC, Dubrovskii, VG, and Fontcuberta i Morral, A
- Abstract
© 2019, The Author(s). III-V semiconductor nanowires deterministically placed on top of silicon electronic platform would open many avenues in silicon-based photonics, quantum technologies and energy harvesting. For this to become a reality, gold-free site-selected growth is necessary. Here, we propose a mechanism which gives a clear route for maximizing the nanowire yield in the self-catalyzed growth fashion. It is widely accepted that growth of nanowires occurs on a layer-by-layer basis, starting at the triple-phase line. Contrary to common understanding, we find that vertical growth of nanowires starts at the oxide-substrate line interface, forming a ring-like structure several layers thick. This is granted by optimizing the diameter/height aspect ratio and cylindrical symmetry of holes, which impacts the diffusion flux of the group V element through the well-positioned group III droplet. This work provides clear grounds for realistic integration of III-Vs on silicon and for the organized growth of nanowires in other material systems.
- Published
- 2021