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We present various concepts and experimental procedures to produce biepitaxial YBa2Cu3O72x grainboundary Josephson junctions. The device properties have an interesting phenomenology, related in part to the possible influence of ‘‘p loops.’’ The performance of our junctions and superconducting quantum interference devices indicates significant improvement in the biepitaxial technique. Further, we propose methods for fabricating circuits in which 0 and p loops are controllably located on the same chip.

The magnetic-field evolution of Coulomb blockade peaks in lateral In0.75Ga0.25As/In0.75Al0.25As quantum dots in the few-electron regime is reported. Quantum dots are defined by gates evaporated onto a 60-nm-thick hydrogen silsesquioxane insulating film. A gyromagnetic factor g(*)approximate to 4.4 is measured via zero-bias spin spectroscopy and a transition from singlet to triplet spin configuration is found at an in-plane magnetic field B=0.7 T. This observation opens the way to the manipulation of singlet and triplet states at moderate fields and its relevance for quantum information applications will be discussed.

YBa2Cu3O72d (YBCO) artificial grain-boundary Josephson junctions have been fabricated, employing a recently implemented biepitaxial technique. The grain boundaries can be obtained by controlling the orientation of the MgO seed layer and are characterized by a misalignment of the c axes ~45° c-axis tilt or 45° c-axis twist!. A detailed characterization of the Josephson properties has been carried out, showing remarkable differences in the transport parameters of tilt and twist junctions. High-resolution electron microscopy showed the presence of perfect basal plane faced boundaries in the cross sections of tilt boundaries; however interfaces meandering along the sample thickness are also sometimes observed. The correlation between transport properties and microstructure is investigated and the possibility to employ these junctions to explore the symmetry of the order parameter is presented. On the basis of the analysis of microstructural data and of a qualitative growth model for ~103! YBCO grains, it is suggested that clean basal plane boundaries exhibiting uniform Josephson properties could be obtained by this technique.

The properties of YBa2Cu3O7-x grain boundary Josephson junctions have been reproducibly modified by a focused electron beam irradiation. The original junctions were fabricated by using the biepitaxial technique on (110) SrTiO3, substrates. The technique utilizes the property of YBa2Cu3O7-x film to grow (103)-oriented on the bare substrate and (001)-oriented on the part of the substrate with the MgO seed layer, providing Josephson junctions of good quality and excellent reproducibility. The junction parameters can be adjusted controllably by applying an appropriate irradiation dose. Electron irradiation reduced the critical current of the junctions I-C and increased the normal state specific resistivity. The disappearance of the excess current and the shift of the voltage position of the Fiske steps were also observed. Isothermal annealing partly restores the original junction properties. We also speculate that some aspects of the nature of the grain boundary barriers can be better understood from the study of the transport properties of irradiated junctions.

Electron-beam irradiation has been used to induce controllable variations in the properties of YBa2CU3O7-x biepitaxial grain-boundary Josephson junctions. A correlation between the transport properties and the microstructure was obtained by determining the ratio of a barrier thickness to the dielectric constant of the junctions with different barriers. These results give evidence of the role of the oxygen content and the dielectric constant of the interface region in transport phenomena. The experiment also demonstrates frequency tunability in a resonant soliton oscillator.

We have fabricated and characterized Hall probes on an In0.75Al0.25As/In0.75Ga0.25As two-dimensional electron gas with lateral sizes down to 100 nm. We studied the dependence of the low temperature (4 K) magnetic field sensitivity on the probe size, showing that the best flux sensitivity is achieved by devices of approximate to 200 nm, employing highly doped systems (n similar to 10(12) cm(-2)). Hall bars with sizes down to the range of 200-250 nm show a magnetic field sensitivity of a few Gauss, corresponding to a flux sensitivity equal to 10(-2) Phi(0). (C) 2007 Elsevier B.V. All rights reserved.

Electron-phase modulation in magnetic and electric fields will be presented in In_(0.75)Ga_(0.25)As Aharonov-Bohm (AB) rings. The zero Schottky barrier of this material made it possible to nanofabricate devices with radii down to below 200 nm without carrier depletion. We shall present a fabrication scheme based on wet and dry etching that yielded excellent reproducibility, very high contrast of the oscillations and good electrical gating. The operation of these structures is compatible with closed-cycle refrigeration and suggests that this process can yield coherent electronic circuits that do not require cryogenic liquids. The InGaAs/AlInAs heterostructure was grown by MBE on a GaAs substrate [1], and in light of the large effective g-factor and the absence of the Schottky barrier is a material system of interest for the investigation of spin-related effects [2-4]} and the realization of hybrid superconductor/semiconductor devices [5]., Comment: 7 pages, 4 figures, to appear in Physica E

A number of lines of evidence make the gene that encodes the G-protein-coupled CB1/Cnr1 receptor a strong candidate to harbor variants that might contribute to individual differences in human addiction vulnerability. The CB1/Cnr1 receptor is the major brain site at which cannabinoid marijuana constituents are psychoactive as well as the principal brain receptor for endogenous anandamide ligands. It is densely expressed in brain circuits likely to be important for both the reward and mnemonic processes important for addiction. Altered drug effects in CB1/Cnr1 knockout mice and initial association studies also make variants at the CB1/Cnr1 locus candidates for roles in human vulnerabilities to addictions. However, many features of this gene's structure, regulation and variation remain poorly defined. This poor definition has limited the ability of previous association studies to adequately sample variation at this locus. We now report improved definition of the human CB1/Cnr1 locus and its variants. Novel exons 1–3, splice variant and candidate promoter region sequences add to the richness of the CB1/Cnr1 locus. Candidate promoter region sequences confer reporter gene expression in cells that express CB1/Cnr1. Common polymorphisms reveal patterns of linkage disequilibrium in European- and in African-American individuals. A 5′ CB1/Cnr1 ‘TAG’ haplotype displays significant allelic frequency differences between substance abusers and controls in European-American, African-American and Japanese samples. Post-mortem brain samples of heterozygous individuals contain less mRNA transcribed from the TAG alleles than from other CB1/Cnr1 haplotypes. CB1/ Cnr1 genomic variation thus appears to play roles in human addiction vulnerability.

YBa2Cu3O7-x artificial grain boundary Josephson junctions have been fabricated, employing a recently implemented biepitaxial technique. The grain boundaries can be obtained by controlling the orientation of the MgO seed layer and are characterized by a misalignment of the c-axes (45 degrees a-axis tilt or 45 degrees a-axis twist). These types of grain boundaries are still mostly unexplored. We carried out a complete characterization of their transport properties and microstructure. Junctions and de SQUIDs associated with these grain boundaries exhibit an excellent Josephson phenomenology and high values of the ICRN product and of the magnetic flux-to-voltage transfer parameter respectively. Remarkable differences in the transport parameters of tilt and twist junctions have been observed, which can be of interest for several applications. A maximum speed of Josephson vortices as calculated from the voltage step values of the order of 2 x 10(6) m s(-1) is obtained. These devices could also have some impact on experiments designed to study the symmetry of the order parameter, exploiting their microstructure and anisotropic properties. High-resolution electron microscopy showed the presence of perfect basal plane faced boundaries in the cross sections of tilt boundaries.