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Your search keyword '"Cao, Zhengyi"' showing total 190 results
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190 results on '"Cao, Zhengyi"'

1. High Performance Graphene Integrated Photonics Platform Enabled by Gold-assisted Transfer

Author

Wu, Xiaoxuan, Cao, Zhengyi, Zhao, Tianxiang, Wu, Yun, Li, Zhonghui, Doukas, Spyros, Lidorikis, Elefterios, Xue, Yu, Liu, Liu, Ghaebi, Omid, Soavi, Giancarlo, Lv, Junpeng, Ni, Zhenghua, and Wang, Junjia

Subjects
Physics - Optics, Physics - Applied Physics
Abstract

Graphene is promising for nanoscale, efficient, ultra-fast photo- and opto-electronic devices because of its remarkable electrical and optical properties, such as fast electron relaxation and heat dissipation. Here, we realize high-performance graphene integrated photonics platform enabled by gold-assisted transfer. Thanks to our optimized transfer technique, we fabricate and demonstrate (1) a microscale thermo-optic modulator with a tuning efficiency of 0.037 nm/mW and high heating performance of 67.4 K${\mu}m^{3}mW^{-1}$ on a small active area of 7.54 ${\mu}m^{2}$ and (2) a graphene electro-absorption modulator featuring an high modulation bandwidth up to 26.8 GHz and a high-speed data rate reaching 48 Gb/s, and (3) a graphene Mach-Zehnder interferometer modulator with a high normalized modulation efficiency of 0.027 dBV$^{-1}{\mu}m^{-1}$. Our graphene integrated photonics platform has far superior performances compared to state of the art in terms of efficiency, low process complexity, and compact device footage. Thus, our approach and results provide the background for the realization of high-performance integrated photonic circuits with CMOS compatibility.

Published
2024
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10. Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors

Author

Liu, Erfu, Fu, Yajun, Wang, Yaojia, Feng, Yanqing, Liu, Huimei, Wan, Xiangang, Zhou, Wei, Wang, Baigeng, Shao, Lubin, Ho, Ching-Hwa, Huang, Ying-Sheng, Cao, Zhengyi, Wang, Laiguo, Li, Aidong, Zeng, Junwen, Song, Fengqi, Wang, Xinran, Shi, Yi, Yuan, Hongtao, Hwang, Harold Y., Cui, Yi, Miao, Feng, and Xing, Dingyu

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic behavior, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here, we present atomically thin rhenium disulfide (ReS2) flakes with a unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated mono- and few-layer ReS2 field effect transistors (FETs), which exhibit competitive performance with large current on/off ratios (~107) and low subthreshold swings (100 mV dec-1). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known 2D semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic FETs, suggesting the promising implementation of large-scale 2D logic circuits. Our results underscore the unique properties of 2D semiconducting materials with low crystal symmetry for future electronic applications., Comment: accepted by Nature Communications; 23 pages, 4 figures

Published
2015
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15. High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method.

Author

Huang, Yan, Xiao, Junfeng, Tao, Ran, Liu, Zhi, Mo, Yiran, Yu, Xinxin, Cao, Zhengyi, Wu, Yun, Li, Zhonghui, Wang, Haolin, and Wang, Lei

Subjects
HALL effect, FIELD-effect transistors, DIAMOND surfaces, HYDROGEN evolution reactions, DIELECTRICS, DIAMONDS, INDIUM gallium zinc oxide
Abstract

Hydrogen-terminated diamond surfaces, emerging as a promising two-dimensional (2D) electron platform with great thermal and electronic properties, hold great potential for the next-generation high power and high frequency field effect transistor (FET). However, ideal gate dielectrics with high crystallinity and defect-free surfaces are still largely elusive. In this work, using the contamination-free pickup transfer method, hexagonal boron nitride (h-BN) flakes were fabricated on top of the hydrogen-terminated diamond surface to serve as a gate material and the passivation layer. The morphological and optical characterizations revealed the formation of homogeneous and intimate interface between h-BN and diamond. Benefiting from the h-BN gate dielectric layer, the maximum drain current density, subthreshold swing, and on/off ratio of diamond FET are measured to be −210.3 mA mm−1, 161 mV/dec, and 106, respectively. Especially, the transport measurement shows an almost constant Hall mobility of around 260 cm2 V−1 s−1 in the hole density range of 2 − 6 × 1012 cm−2, suggesting the excellent gate controllability of h-BN. Our results indicate that h-BN could form high-quality interface with hydrogen-terminated diamond, paving the way for the development of diamond-based electronic applications. [ABSTRACT FROM AUTHOR]

Published
2023
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33. High-Temperature-Annealed Flexible Carbon Nanotube Network Transistors for High-Frequency Wearable Wireless Electronics

Author

Lan, Yu, primary, Yang, Yang, additional, Wang, Yan, additional, Wu, Yun, additional, Cao, Zhengyi, additional, Huo, Shuai, additional, Jiang, Lihong, additional, Guo, Yunchuan, additional, Wu, Yunqiu, additional, Yan, Bo, additional, Xu, Ruimin, additional, Chen, Yuanfu, additional, Li, Yanrong, additional, Lal, Shalini, additional, Ma, Zhenqiang, additional, and Xu, Yuehang, additional

Published
2020
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40. MDM2 Promotes Genome Instability by Ubiquitinating the Transcription Factor HBP1

Author

Cao, Zhengyi, Xue, Junhui, Cheng, Yuning, Wang, Jiyin, Liu, Yujuan, Li, Hui, Jiang, Wei, Li, Gang, Gui, Yaoting, Zhang, Xiaowei, Cao, Zhengyi, Xue, Junhui, Cheng, Yuning, Wang, Jiyin, Liu, Yujuan, Li, Hui, Jiang, Wei, Li, Gang, Gui, Yaoting, and Zhang, Xiaowei

Abstract

Genome instability is a common feature of tumor cells, and the persistent presence of genome instability is a potential mechanism of tumorigenesis. The E3 ubiquitin ligase MDM2 is intimately involved in genome instability, but its mechanisms are unclear. Our data demonstrated that the transcription factor HBP1 is a target of MDM2. MDM2 facilitates HBP1 proteasomal degradation by ubiquitinating HBP1, regardless of p53 status, thus attenuating the transcriptional inhibition of HBP1 in the expression of its target genes, such as the DNA methyltransferase DNMT1 and histone methyltransferase EZH2, which results in global DNA hypermethylation and histone hypermethylation and ultimately genome instability. The repression of HBP1 by MDM2 finally promotes cell growth and tumorigenesis. Next, we thoroughly explored the regulatory mechanism of the MDM2/HBP1 axis in DNA damage repair following ionizing radiation. Our data indicated that MDM2 overexpression-mediated repression of HBP1 delays DNA damage repair and causes cell death in a p53-independent manner. This investigation elucidated the mechanism of how MDM2 promotes genome instability and enhances tumorigenesis in the absence of p53, thus providing a theoretical and experimental basis for targeting MDM2 as a cancer therapy. © 2019, The Author(s).

Published
2019

47. HER2+ peptide conjugated and pH responsive polyethylene glycol- poly(lactic-co-glycolic) acid (PEG-PLGA) nanoparticles tested in novel transgenic mouse tumor model

Author

Cao Zhengyi, Ma Peter, Wang Su He, and Doleyres Yasmine

Subjects
Genetically modified mouse, chemistry.chemical_classification, Histology, Biomedical Engineering, Nanoparticle, Bioengineering, Peptide, Polyethylene glycol, Conjugated system, Peg plga, chemistry.chemical_compound, Biochemistry, chemistry, Glycolic acid, Biotechnology, Nuclear chemistry
Published
2016

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